JP2005075767A5 - - Google Patents
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- JP2005075767A5 JP2005075767A5 JP2003307443A JP2003307443A JP2005075767A5 JP 2005075767 A5 JP2005075767 A5 JP 2005075767A5 JP 2003307443 A JP2003307443 A JP 2003307443A JP 2003307443 A JP2003307443 A JP 2003307443A JP 2005075767 A5 JP2005075767 A5 JP 2005075767A5
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- Japan
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- 125000000962 organic group Chemical group 0.000 claims 26
- 229920002120 photoresistant polymer Polymers 0.000 claims 20
- 125000004432 carbon atom Chemical group C* 0.000 claims 16
- -1 tert-butyloxycarbonylmethyl group Chemical group 0.000 claims 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 11
- 239000000463 material Substances 0.000 claims 11
- 150000002894 organic compounds Chemical class 0.000 claims 10
- 125000003118 aryl group Chemical group 0.000 claims 8
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 230000005855 radiation Effects 0.000 claims 6
- 239000007864 aqueous solution Substances 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000002378 acidificating effect Effects 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 125000001624 naphthyl group Chemical group 0.000 claims 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 239000003456 ion exchange resin Substances 0.000 claims 3
- 229920003303 ion-exchange polymer Polymers 0.000 claims 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 3
- 230000035945 sensitivity Effects 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 0 CC(C)(CC(C1)C2)CC1C*2C(C)(CC(C1)C2)CC1C*2OP Chemical compound CC(C)(CC(C1)C2)CC1C*2C(C)(CC(C1)C2)CC1C*2OP 0.000 description 6
- GLVNIRDAGBGNRX-UHFFFAOYSA-N CCC(C1)(C2)CC3(CO)CC2C1C3 Chemical compound CCC(C1)(C2)CC3(CO)CC2C1C3 GLVNIRDAGBGNRX-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003307443A JP2005075767A (ja) | 2003-08-29 | 2003-08-29 | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003307443A JP2005075767A (ja) | 2003-08-29 | 2003-08-29 | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005075767A JP2005075767A (ja) | 2005-03-24 |
| JP2005075767A5 true JP2005075767A5 (enExample) | 2006-05-11 |
Family
ID=34410229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003307443A Pending JP2005075767A (ja) | 2003-08-29 | 2003-08-29 | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005075767A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190451A1 (en) * | 2004-04-05 | 2007-08-16 | Idemitsu Kosan Co., Ltd. | Calixresorcinarene compounds, photoresist base materials, and compositions thereof |
| WO2005101127A1 (ja) * | 2004-04-15 | 2005-10-27 | Mitsubishi Gas Chemical Company, Inc. | レジスト組成物 |
| US7625689B2 (en) | 2004-12-22 | 2009-12-01 | Sumitomo Chemical Company, Limited | Chemically amplified positive resist composition |
| KR20080028863A (ko) * | 2005-06-01 | 2008-04-02 | 이데미쓰 고산 가부시키가이샤 | 칼릭스레졸시나렌 화합물, 그리고, 그것으로 이루어지는포토레지스트 기재 및 그 조성물 |
| JP2009196904A (ja) * | 2008-02-19 | 2009-09-03 | Jsr Corp | 環状化合物及びその製造方法 |
| JP5435995B2 (ja) * | 2009-01-30 | 2014-03-05 | 出光興産株式会社 | 環状化合物の製造方法 |
| TWI639902B (zh) | 2011-11-25 | 2018-11-01 | 理光股份有限公司 | 噴嘴接收器、粉末容器及影像形成設備 |
| WO2015199679A1 (en) * | 2014-06-25 | 2015-12-30 | Intel Corporation | Techniques for forming integrated passive devices |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3923426A1 (de) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt |
| JP3630422B2 (ja) * | 1991-12-18 | 2005-03-16 | クラリアント・ファイナンス・（ビーブイアイ）・リミテッド | ノボラック樹脂中の金属イオンの低減 |
| JP3203842B2 (ja) * | 1992-11-30 | 2001-08-27 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| US5618655A (en) * | 1995-07-17 | 1997-04-08 | Olin Corporation | Process of reducing trace levels of metal impurities from resist components |
| JPH0968795A (ja) * | 1995-08-31 | 1997-03-11 | Toshiba Corp | 感光性組成物およびその製造方法 |
| US5656413A (en) * | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
| JPH10310545A (ja) * | 1997-05-09 | 1998-11-24 | Jsr Corp | フェノール系デンドリマー化合物およびそれを含む感放射線性組成物 |
| JPH11249309A (ja) * | 1998-03-04 | 1999-09-17 | Hitachi Ltd | 電子線ポジ型レジストおよびこれを用いたフォトマスクの製造方法 |
| JPH11322656A (ja) * | 1998-05-11 | 1999-11-24 | Jsr Corp | 新規なカリックスアレーン誘導体およびカリックスレゾルシナレーン誘導体、ならびに感光性組成物 |
| US6093517A (en) * | 1998-07-31 | 2000-07-25 | International Business Machines Corporation | Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions |
| JP2000114717A (ja) * | 1998-10-02 | 2000-04-21 | Ibiden Co Ltd | 多層プリント配線板及びその製造方法 |
| JP2002328473A (ja) * | 2001-05-02 | 2002-11-15 | Jsr Corp | ポジ型感放射線性組成物 |
| JP4076789B2 (ja) * | 2002-05-09 | 2008-04-16 | Ｊｓｒ株式会社 | カリックスレゾルシンアレーン誘導体および感放射線性樹脂組成物 |
| JP3927575B2 (ja) * | 2002-07-30 | 2007-06-13 | 株式会社ルネサステクノロジ | 電子装置の製造方法 |
-
2003
- 2003-08-29 JP JP2003307443A patent/JP2005075767A/ja active Pending
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