JP2004191913A5 - - Google Patents
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- JP2004191913A5 JP2004191913A5 JP2003112458A JP2003112458A JP2004191913A5 JP 2004191913 A5 JP2004191913 A5 JP 2004191913A5 JP 2003112458 A JP2003112458 A JP 2003112458A JP 2003112458 A JP2003112458 A JP 2003112458A JP 2004191913 A5 JP2004191913 A5 JP 2004191913A5
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- 125000000962 organic group Chemical group 0.000 description 17
- -1 tert-butyloxycarbonylmethyl group Chemical group 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 125000003118 aryl group Chemical group 0.000 description 5
- 0 CCC(CC(C1)C2)(CC1C1)CC21C(C)=* Chemical compound CCC(CC(C1)C2)(CC1C1)CC21C(C)=* 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- RCLCPRYOCVVVFT-UHFFFAOYSA-N CC(c1cc(C(C)c2cc(C(C)c3cc(C4C)c(C)cc3C)c(C)cc2C)c(C)cc1C)c1c(C)cc(C)c4c1 Chemical compound CC(c1cc(C(C)c2cc(C(C)c3cc(C4C)c(C)cc3C)c(C)cc2C)c(C)cc1C)c1c(C)cc(C)c4c1 RCLCPRYOCVVVFT-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003112458A JP4429620B2 (ja) | 2002-10-15 | 2003-04-17 | 感放射線性有機化合物 |
| AU2003261865A AU2003261865A1 (en) | 2002-10-15 | 2003-09-01 | Photoresist base material, method for purification thereof, and photoresist compositions |
| US10/531,208 US20050271971A1 (en) | 2002-10-15 | 2003-09-01 | Photoresist base material, method for purification thereof, and photoresist compositions |
| PCT/JP2003/011137 WO2004036315A1 (ja) | 2002-10-15 | 2003-09-01 | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
| KR1020057006474A KR20050061538A (ko) | 2002-10-15 | 2003-09-01 | 포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물 |
| EP03808872A EP1553451A4 (en) | 2002-10-15 | 2003-09-01 | PHOTOSENSITIVE MEDIUM, PURIFICATION METHOD THEREFOR, AND PHOTOSENSITIVE COMPOSITIONS |
| TW092124659A TWI282037B (en) | 2002-10-15 | 2003-09-05 | Photoresist base material, method for purification thereof, and photoresist compositions |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002300144 | 2002-10-15 | ||
| JP2003112458A JP4429620B2 (ja) | 2002-10-15 | 2003-04-17 | 感放射線性有機化合物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004191913A JP2004191913A (ja) | 2004-07-08 |
| JP2004191913A5 true JP2004191913A5 (enExample) | 2006-03-23 |
| JP4429620B2 JP4429620B2 (ja) | 2010-03-10 |
Family
ID=32109447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003112458A Expired - Fee Related JP4429620B2 (ja) | 2002-10-15 | 2003-04-17 | 感放射線性有機化合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20050271971A1 (enExample) |
| EP (1) | EP1553451A4 (enExample) |
| JP (1) | JP4429620B2 (enExample) |
| KR (1) | KR20050061538A (enExample) |
| AU (1) | AU2003261865A1 (enExample) |
| TW (1) | TWI282037B (enExample) |
| WO (1) | WO2004036315A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7001708B1 (en) * | 2001-11-28 | 2006-02-21 | University Of Central Florida Research Foundation, Inc. | Photosensitive polymeric material for worm optical data storage with two-photon fluorescent readout |
| KR100900173B1 (ko) | 2004-02-20 | 2009-06-02 | 도오꾜오까고오교 가부시끼가이샤 | 패턴 형성 재료용 기재, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
| US20070190451A1 (en) * | 2004-04-05 | 2007-08-16 | Idemitsu Kosan Co., Ltd. | Calixresorcinarene compounds, photoresist base materials, and compositions thereof |
| JP3946715B2 (ja) | 2004-07-28 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP4468119B2 (ja) | 2004-09-08 | 2010-05-26 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| JP4837323B2 (ja) | 2004-10-29 | 2011-12-14 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法および化合物 |
| TWI494697B (zh) | 2004-12-24 | 2015-08-01 | Mitsubishi Gas Chemical Co | 光阻用化合物 |
| JP4618715B2 (ja) * | 2005-01-27 | 2011-01-26 | 日東電工株式会社 | 液晶化合物 |
| US7981588B2 (en) | 2005-02-02 | 2011-07-19 | Tokyo Ohka Kogyo Co., Ltd. | Negative resist composition and method of forming resist pattern |
| JP5138157B2 (ja) | 2005-05-17 | 2013-02-06 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
| KR20080028863A (ko) * | 2005-06-01 | 2008-04-02 | 이데미쓰 고산 가부시키가이샤 | 칼릭스레졸시나렌 화합물, 그리고, 그것으로 이루어지는포토레지스트 기재 및 그 조성물 |
| JP4813103B2 (ja) | 2005-06-17 | 2011-11-09 | 東京応化工業株式会社 | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP4732038B2 (ja) | 2005-07-05 | 2011-07-27 | 東京応化工業株式会社 | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP2009527019A (ja) * | 2006-02-16 | 2009-07-23 | コーネル・リサーチ・ファンデーション・インコーポレイテッド | ２００ｎｍ未満リソグラフィー用アダマンタン系分子性ガラスフォトレジスト |
| TW200905398A (en) * | 2007-04-27 | 2009-02-01 | Idemitsu Kosan Co | Photoresist base material and photoresist composition containing the same |
| JP5396738B2 (ja) * | 2007-05-09 | 2014-01-22 | 三菱瓦斯化学株式会社 | 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法 |
| WO2008153154A1 (ja) * | 2007-06-15 | 2008-12-18 | Idemitsu Kosan Co., Ltd. | 環状化合物、フォトレジスト基材及びフォトレジスト組成物 |
| TW200914417A (en) * | 2007-06-28 | 2009-04-01 | Idemitsu Kosan Co | Method for production of cyclic compound having substituent introduced therein, and photoresist substrate |
| JP5354420B2 (ja) * | 2007-12-11 | 2013-11-27 | 出光興産株式会社 | 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置 |
| JP5435995B2 (ja) * | 2009-01-30 | 2014-03-05 | 出光興産株式会社 | 環状化合物の製造方法 |
| JP5701576B2 (ja) | 2009-11-20 | 2015-04-15 | 富士フイルム株式会社 | 分散組成物及び感光性樹脂組成物、並びに固体撮像素子 |
| JP2013079230A (ja) | 2011-09-23 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | カリックスアレーンおよびこれを含むフォトレジスト組成物 |
| JP2013067612A (ja) | 2011-09-23 | 2013-04-18 | Rohm & Haas Electronic Materials Llc | カリックスアレーン化合物およびこれを含むフォトレジスト組成物 |
| KR101935293B1 (ko) | 2016-10-28 | 2019-01-04 | 한양대학교 에리카산학협력단 | 새로운 레졸신아렌 기반의 양친매성 화합물 및 이의 활용 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3888400D1 (de) * | 1987-06-12 | 1994-04-21 | Ciba Geigy | Photoresistzusammensetzungen. |
| JP3039048B2 (ja) * | 1991-11-01 | 2000-05-08 | 住友化学工業株式会社 | ポジ型感放射線性レジスト組成物 |
| JP2655384B2 (ja) * | 1991-11-08 | 1997-09-17 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
| JP3340864B2 (ja) * | 1994-10-26 | 2002-11-05 | 富士写真フイルム株式会社 | ポジ型化学増幅レジスト組成物 |
| JPH10310545A (ja) * | 1997-05-09 | 1998-11-24 | Jsr Corp | フェノール系デンドリマー化合物およびそれを含む感放射線性組成物 |
| TW383416B (en) * | 1997-06-26 | 2000-03-01 | Matsushita Electric Industrial Co Ltd | Pattern forming method |
| JPH11322656A (ja) * | 1998-05-11 | 1999-11-24 | Jsr Corp | 新規なカリックスアレーン誘導体およびカリックスレゾルシナレーン誘導体、ならびに感光性組成物 |
| US6093517A (en) * | 1998-07-31 | 2000-07-25 | International Business Machines Corporation | Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions |
| JP3850596B2 (ja) * | 1999-02-25 | 2006-11-29 | 本州化学工業株式会社 | 新規な部分保護トリスフェノール類とその製造方法 |
| JP4135277B2 (ja) * | 1999-10-12 | 2008-08-20 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| JP4141625B2 (ja) * | 2000-08-09 | 2008-08-27 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそのレジスト層を設けた基材 |
| JP2002182392A (ja) * | 2000-12-11 | 2002-06-26 | Fuji Photo Film Co Ltd | 電子線又はｘ線用ポジ型レジスト組成物 |
| JP2002229193A (ja) * | 2001-02-06 | 2002-08-14 | Fuji Photo Film Co Ltd | 電子線又はｘ線用ポジ型レジスト組成物 |
| US7534547B2 (en) * | 2001-03-29 | 2009-05-19 | Osaka Gas Company Limited | Optically active compound and photosensitive resin composition |
| JP3988580B2 (ja) * | 2001-08-23 | 2007-10-10 | Ｊｓｒ株式会社 | スルホニルオキシム化合物、それを使用する感放射線性酸発生剤、ポジ型感放射線性樹脂組成物、及びネガ型感放射線性樹脂組成物 |
| JP4004820B2 (ja) * | 2001-10-01 | 2007-11-07 | 富士フイルム株式会社 | ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物 |
| US7013965B2 (en) * | 2003-04-29 | 2006-03-21 | General Electric Company | Organic matrices containing nanomaterials to enhance bulk thermal conductivity |
-
2003
- 2003-04-17 JP JP2003112458A patent/JP4429620B2/ja not_active Expired - Fee Related
- 2003-09-01 US US10/531,208 patent/US20050271971A1/en not_active Abandoned
- 2003-09-01 EP EP03808872A patent/EP1553451A4/en not_active Withdrawn
- 2003-09-01 AU AU2003261865A patent/AU2003261865A1/en not_active Abandoned
- 2003-09-01 WO PCT/JP2003/011137 patent/WO2004036315A1/ja not_active Ceased
- 2003-09-01 KR KR1020057006474A patent/KR20050061538A/ko not_active Ceased
- 2003-09-05 TW TW092124659A patent/TWI282037B/zh not_active IP Right Cessation
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