JP4429620B2 - 感放射線性有機化合物 - Google Patents

感放射線性有機化合物 Download PDF

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Publication number
JP4429620B2
JP4429620B2 JP2003112458A JP2003112458A JP4429620B2 JP 4429620 B2 JP4429620 B2 JP 4429620B2 JP 2003112458 A JP2003112458 A JP 2003112458A JP 2003112458 A JP2003112458 A JP 2003112458A JP 4429620 B2 JP4429620 B2 JP 4429620B2
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JP
Japan
Prior art keywords
group
photoresist
tert
radiation
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003112458A
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English (en)
Japanese (ja)
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JP2004191913A (ja
JP2004191913A5 (enExample
Inventor
充 上田
宏寿 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2003112458A priority Critical patent/JP4429620B2/ja
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to KR1020057006474A priority patent/KR20050061538A/ko
Priority to AU2003261865A priority patent/AU2003261865A1/en
Priority to US10/531,208 priority patent/US20050271971A1/en
Priority to PCT/JP2003/011137 priority patent/WO2004036315A1/ja
Priority to EP03808872A priority patent/EP1553451A4/en
Priority to TW092124659A priority patent/TWI282037B/zh
Publication of JP2004191913A publication Critical patent/JP2004191913A/ja
Publication of JP2004191913A5 publication Critical patent/JP2004191913A5/ja
Application granted granted Critical
Publication of JP4429620B2 publication Critical patent/JP4429620B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00Ethers; Compounds having groups, groups or groups
    • C07C43/02Ethers
    • C07C43/235Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring and to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C43/253Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring and to a carbon atom of a ring other than a six-membered aromatic ring containing hydroxy or O-metal groups
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/67Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
    • C07C69/708Ethers
    • C07C69/712Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/73Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
    • C07C69/734Ethers
    • C07C69/736Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96Esters of carbonic or haloformic acids
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D309/00Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
    • C07D309/02Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
    • C07D309/04Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/56Ring systems containing bridged rings
    • C07C2603/58Ring systems containing bridged rings containing three rings
    • C07C2603/70Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74Adamantanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2003112458A 2002-10-15 2003-04-17 感放射線性有機化合物 Expired - Fee Related JP4429620B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003112458A JP4429620B2 (ja) 2002-10-15 2003-04-17 感放射線性有機化合物
AU2003261865A AU2003261865A1 (en) 2002-10-15 2003-09-01 Photoresist base material, method for purification thereof, and photoresist compositions
US10/531,208 US20050271971A1 (en) 2002-10-15 2003-09-01 Photoresist base material, method for purification thereof, and photoresist compositions
PCT/JP2003/011137 WO2004036315A1 (ja) 2002-10-15 2003-09-01 フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物
KR1020057006474A KR20050061538A (ko) 2002-10-15 2003-09-01 포토레지스트 기재, 이것의 정제 방법 및 포토레지스트조성물
EP03808872A EP1553451A4 (en) 2002-10-15 2003-09-01 PHOTOSENSITIVE MEDIUM, PURIFICATION METHOD THEREFOR, AND PHOTOSENSITIVE COMPOSITIONS
TW092124659A TWI282037B (en) 2002-10-15 2003-09-05 Photoresist base material, method for purification thereof, and photoresist compositions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002300144 2002-10-15
JP2003112458A JP4429620B2 (ja) 2002-10-15 2003-04-17 感放射線性有機化合物

Publications (3)

Publication Number Publication Date
JP2004191913A JP2004191913A (ja) 2004-07-08
JP2004191913A5 JP2004191913A5 (enExample) 2006-03-23
JP4429620B2 true JP4429620B2 (ja) 2010-03-10

Family

ID=32109447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003112458A Expired - Fee Related JP4429620B2 (ja) 2002-10-15 2003-04-17 感放射線性有機化合物

Country Status (7)

Country Link
US (1) US20050271971A1 (enExample)
EP (1) EP1553451A4 (enExample)
JP (1) JP4429620B2 (enExample)
KR (1) KR20050061538A (enExample)
AU (1) AU2003261865A1 (enExample)
TW (1) TWI282037B (enExample)
WO (1) WO2004036315A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011062198A1 (ja) 2009-11-20 2011-05-26 富士フイルム株式会社 分散組成物及び感光性樹脂組成物、並びに固体撮像素子

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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US7001708B1 (en) * 2001-11-28 2006-02-21 University Of Central Florida Research Foundation, Inc. Photosensitive polymeric material for worm optical data storage with two-photon fluorescent readout
KR100900173B1 (ko) 2004-02-20 2009-06-02 도오꾜오까고오교 가부시끼가이샤 패턴 형성 재료용 기재, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US20070190451A1 (en) * 2004-04-05 2007-08-16 Idemitsu Kosan Co., Ltd. Calixresorcinarene compounds, photoresist base materials, and compositions thereof
JP3946715B2 (ja) 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
TWI494697B (zh) 2004-12-24 2015-08-01 Mitsubishi Gas Chemical Co 光阻用化合物
JP4618715B2 (ja) * 2005-01-27 2011-01-26 日東電工株式会社 液晶化合物
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
KR20080028863A (ko) * 2005-06-01 2008-04-02 이데미쓰 고산 가부시키가이샤 칼릭스레졸시나렌 화합물, 그리고, 그것으로 이루어지는포토레지스트 기재 및 그 조성물
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP2009527019A (ja) * 2006-02-16 2009-07-23 コーネル・リサーチ・ファンデーション・インコーポレイテッド 200nm未満リソグラフィー用アダマンタン系分子性ガラスフォトレジスト
TW200905398A (en) * 2007-04-27 2009-02-01 Idemitsu Kosan Co Photoresist base material and photoresist composition containing the same
JP5396738B2 (ja) * 2007-05-09 2014-01-22 三菱瓦斯化学株式会社 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法
WO2008153154A1 (ja) * 2007-06-15 2008-12-18 Idemitsu Kosan Co., Ltd. 環状化合物、フォトレジスト基材及びフォトレジスト組成物
TW200914417A (en) * 2007-06-28 2009-04-01 Idemitsu Kosan Co Method for production of cyclic compound having substituent introduced therein, and photoresist substrate
JP5354420B2 (ja) * 2007-12-11 2013-11-27 出光興産株式会社 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置
JP5435995B2 (ja) * 2009-01-30 2014-03-05 出光興産株式会社 環状化合物の製造方法
JP2013079230A (ja) 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
JP2013067612A (ja) 2011-09-23 2013-04-18 Rohm & Haas Electronic Materials Llc カリックスアレーン化合物およびこれを含むフォトレジスト組成物
KR101935293B1 (ko) 2016-10-28 2019-01-04 한양대학교 에리카산학협력단 새로운 레졸신아렌 기반의 양친매성 화합물 및 이의 활용

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011062198A1 (ja) 2009-11-20 2011-05-26 富士フイルム株式会社 分散組成物及び感光性樹脂組成物、並びに固体撮像素子

Also Published As

Publication number Publication date
AU2003261865A1 (en) 2004-05-04
TWI282037B (en) 2007-06-01
WO2004036315B1 (ja) 2004-06-03
US20050271971A1 (en) 2005-12-08
EP1553451A4 (en) 2009-12-16
JP2004191913A (ja) 2004-07-08
TW200405957A (en) 2004-04-16
EP1553451A1 (en) 2005-07-13
KR20050061538A (ko) 2005-06-22
WO2004036315A1 (ja) 2004-04-29

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