JP2002278053A5 - - Google Patents

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Publication number
JP2002278053A5
JP2002278053A5 JP2001076747A JP2001076747A JP2002278053A5 JP 2002278053 A5 JP2002278053 A5 JP 2002278053A5 JP 2001076747 A JP2001076747 A JP 2001076747A JP 2001076747 A JP2001076747 A JP 2001076747A JP 2002278053 A5 JP2002278053 A5 JP 2002278053A5
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JP
Japan
Prior art keywords
group
substituent
general formula
carbon atoms
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001076747A
Other languages
English (en)
Japanese (ja)
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JP2002278053A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001076747A priority Critical patent/JP2002278053A/ja
Priority claimed from JP2001076747A external-priority patent/JP2002278053A/ja
Priority to TW091104764A priority patent/TWI243285B/zh
Priority to US10/097,983 priority patent/US6743562B2/en
Publication of JP2002278053A publication Critical patent/JP2002278053A/ja
Publication of JP2002278053A5 publication Critical patent/JP2002278053A5/ja
Pending legal-status Critical Current

Links

JP2001076747A 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物 Pending JP2002278053A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001076747A JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物
TW091104764A TWI243285B (en) 2001-03-16 2002-03-14 Positive photoresist composition
US10/097,983 US6743562B2 (en) 2001-03-16 2002-03-15 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001076747A JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
JP2002278053A JP2002278053A (ja) 2002-09-27
JP2002278053A5 true JP2002278053A5 (enExample) 2006-01-19

Family

ID=18933631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001076747A Pending JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物

Country Status (3)

Country Link
US (1) US6743562B2 (enExample)
JP (1) JP2002278053A (enExample)
TW (1) TWI243285B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657632B2 (en) * 2001-01-24 2003-12-02 Hewlett-Packard Development Company, L.P. Unified memory distributed across multiple nodes in a computer graphics system
TWI267697B (en) * 2001-06-28 2006-12-01 Tokyo Ohka Kogyo Co Ltd Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device
JP4040392B2 (ja) * 2002-08-22 2008-01-30 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP2004334060A (ja) 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 化学増幅型レジスト用光酸発生剤及びそれを含有するレジスト材料並びにパターン形成方法
KR100583096B1 (ko) * 2003-06-27 2006-05-23 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
EP1780198B1 (en) 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
EP1780199B1 (en) 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
JP4548617B2 (ja) 2006-06-09 2010-09-22 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
JP4623311B2 (ja) 2006-06-14 2011-02-02 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
US20080268839A1 (en) * 2007-04-27 2008-10-30 Ayers John I Reducing a number of registration termination massages in a network for cellular devices
US8753793B2 (en) * 2009-01-15 2014-06-17 Daicel Chemical Industries, Ltd. Method for producing resin solution for photoresist, photoresist composition, and pattern-forming method
EP2287669A1 (en) * 2009-06-26 2011-02-23 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
KR102227564B1 (ko) * 2014-01-20 2021-03-15 삼성디스플레이 주식회사 포토레지스트 조성물
KR102537349B1 (ko) 2015-02-02 2023-05-26 바스프 에스이 잠재성 산 및 그의 용도
TWI717543B (zh) 2016-08-09 2021-02-01 德商馬克專利公司 光阻組合物及其用途

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2944663A1 (de) 1979-11-06 1981-05-14 Bayer Ag, 5090 Leverkusen Imidazolderivate, verfahren zu ihrer herstellung sowie ihre verwendung in arzneimitteln
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP3665166B2 (ja) * 1996-07-24 2005-06-29 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
TWI277830B (en) 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids

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