JP2002278053A - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物

Info

Publication number
JP2002278053A
JP2002278053A JP2001076747A JP2001076747A JP2002278053A JP 2002278053 A JP2002278053 A JP 2002278053A JP 2001076747 A JP2001076747 A JP 2001076747A JP 2001076747 A JP2001076747 A JP 2001076747A JP 2002278053 A JP2002278053 A JP 2002278053A
Authority
JP
Japan
Prior art keywords
group
general formula
acid
resin
substituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001076747A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002278053A5 (enExample
Inventor
Atsushi Momota
淳 百田
Yasumasa Kawabe
保雅 河辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2001076747A priority Critical patent/JP2002278053A/ja
Priority to TW091104764A priority patent/TWI243285B/zh
Priority to US10/097,983 priority patent/US6743562B2/en
Publication of JP2002278053A publication Critical patent/JP2002278053A/ja
Publication of JP2002278053A5 publication Critical patent/JP2002278053A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001076747A 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物 Pending JP2002278053A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001076747A JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物
TW091104764A TWI243285B (en) 2001-03-16 2002-03-14 Positive photoresist composition
US10/097,983 US6743562B2 (en) 2001-03-16 2002-03-15 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001076747A JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
JP2002278053A true JP2002278053A (ja) 2002-09-27
JP2002278053A5 JP2002278053A5 (enExample) 2006-01-19

Family

ID=18933631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001076747A Pending JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物

Country Status (3)

Country Link
US (1) US6743562B2 (enExample)
JP (1) JP2002278053A (enExample)
TW (1) TWI243285B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235343B2 (en) 2003-05-12 2007-06-26 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
US7494760B2 (en) 2006-06-09 2009-02-24 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
US7498126B2 (en) 2006-06-14 2009-03-03 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
US7511169B2 (en) 2005-04-06 2009-03-31 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US7531290B2 (en) 2005-10-31 2009-05-12 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US7556909B2 (en) 2005-10-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US11385543B2 (en) 2016-08-09 2022-07-12 Merck Patent Gmbh Enviromentally stable, thick film, chemically amplified resist

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657632B2 (en) * 2001-01-24 2003-12-02 Hewlett-Packard Development Company, L.P. Unified memory distributed across multiple nodes in a computer graphics system
TWI267697B (en) * 2001-06-28 2006-12-01 Tokyo Ohka Kogyo Co Ltd Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device
JP4040392B2 (ja) * 2002-08-22 2008-01-30 富士フイルム株式会社 ポジ型フォトレジスト組成物
KR100583096B1 (ko) * 2003-06-27 2006-05-23 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
US20080268839A1 (en) * 2007-04-27 2008-10-30 Ayers John I Reducing a number of registration termination massages in a network for cellular devices
KR20110106882A (ko) * 2009-01-15 2011-09-29 다이셀 가가꾸 고교 가부시끼가이샤 포토레지스트용 수지 용액의 제조 방법, 포토레지스트 조성물 및 패턴 형성 방법
JP5698924B2 (ja) * 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 電子デバイスを形成する方法
KR102227564B1 (ko) * 2014-01-20 2021-03-15 삼성디스플레이 주식회사 포토레지스트 조성물
EP3253735B1 (en) 2015-02-02 2021-03-31 Basf Se Latent acids and their use

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2944663A1 (de) 1979-11-06 1981-05-14 Bayer Ag, 5090 Leverkusen Imidazolderivate, verfahren zu ihrer herstellung sowie ihre verwendung in arzneimitteln
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP3665166B2 (ja) * 1996-07-24 2005-06-29 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
TWI277830B (en) 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235343B2 (en) 2003-05-12 2007-06-26 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
US7511169B2 (en) 2005-04-06 2009-03-31 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US7919226B2 (en) 2005-04-06 2011-04-05 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US7531290B2 (en) 2005-10-31 2009-05-12 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US7556909B2 (en) 2005-10-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US7494760B2 (en) 2006-06-09 2009-02-24 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
US7498126B2 (en) 2006-06-14 2009-03-03 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
US11385543B2 (en) 2016-08-09 2022-07-12 Merck Patent Gmbh Enviromentally stable, thick film, chemically amplified resist

Also Published As

Publication number Publication date
US20020172886A1 (en) 2002-11-21
TWI243285B (en) 2005-11-11
US6743562B2 (en) 2004-06-01

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