TWI243285B - Positive photoresist composition - Google Patents

Positive photoresist composition Download PDF

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Publication number
TWI243285B
TWI243285B TW091104764A TW91104764A TWI243285B TW I243285 B TWI243285 B TW I243285B TW 091104764 A TW091104764 A TW 091104764A TW 91104764 A TW91104764 A TW 91104764A TW I243285 B TWI243285 B TW I243285B
Authority
TW
Taiwan
Prior art keywords
group
formula
photoresist composition
positive photoresist
substituent
Prior art date
Application number
TW091104764A
Other languages
English (en)
Chinese (zh)
Inventor
Makoto Momota
Yasumasa Kawabe
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TWI243285B publication Critical patent/TWI243285B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW091104764A 2001-03-16 2002-03-14 Positive photoresist composition TWI243285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001076747A JP2002278053A (ja) 2001-03-16 2001-03-16 ポジ型フォトレジスト組成物

Publications (1)

Publication Number Publication Date
TWI243285B true TWI243285B (en) 2005-11-11

Family

ID=18933631

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091104764A TWI243285B (en) 2001-03-16 2002-03-14 Positive photoresist composition

Country Status (3)

Country Link
US (1) US6743562B2 (enExample)
JP (1) JP2002278053A (enExample)
TW (1) TWI243285B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657632B2 (en) * 2001-01-24 2003-12-02 Hewlett-Packard Development Company, L.P. Unified memory distributed across multiple nodes in a computer graphics system
TWI267697B (en) * 2001-06-28 2006-12-01 Tokyo Ohka Kogyo Co Ltd Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device
JP4040392B2 (ja) * 2002-08-22 2008-01-30 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP2004334060A (ja) 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 化学増幅型レジスト用光酸発生剤及びそれを含有するレジスト材料並びにパターン形成方法
KR100583096B1 (ko) * 2003-06-27 2006-05-23 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
EP1780198B1 (en) 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
EP1780199B1 (en) 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
JP4548617B2 (ja) 2006-06-09 2010-09-22 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
JP4623311B2 (ja) 2006-06-14 2011-02-02 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
US20080268839A1 (en) * 2007-04-27 2008-10-30 Ayers John I Reducing a number of registration termination massages in a network for cellular devices
KR20110106882A (ko) * 2009-01-15 2011-09-29 다이셀 가가꾸 고교 가부시끼가이샤 포토레지스트용 수지 용액의 제조 방법, 포토레지스트 조성물 및 패턴 형성 방법
JP5698924B2 (ja) * 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電子デバイスを形成する方法
KR102227564B1 (ko) * 2014-01-20 2021-03-15 삼성디스플레이 주식회사 포토레지스트 조성물
EP3253735B1 (en) 2015-02-02 2021-03-31 Basf Se Latent acids and their use
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2944663A1 (de) 1979-11-06 1981-05-14 Bayer Ag, 5090 Leverkusen Imidazolderivate, verfahren zu ihrer herstellung sowie ihre verwendung in arzneimitteln
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP3665166B2 (ja) * 1996-07-24 2005-06-29 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
TWI277830B (en) 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids

Also Published As

Publication number Publication date
US20020172886A1 (en) 2002-11-21
US6743562B2 (en) 2004-06-01
JP2002278053A (ja) 2002-09-27

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