JP2002236358A5 - - Google Patents
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- Publication number
- JP2002236358A5 JP2002236358A5 JP2001032855A JP2001032855A JP2002236358A5 JP 2002236358 A5 JP2002236358 A5 JP 2002236358A5 JP 2001032855 A JP2001032855 A JP 2001032855A JP 2001032855 A JP2001032855 A JP 2001032855A JP 2002236358 A5 JP2002236358 A5 JP 2002236358A5
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- JP
- Japan
- Prior art keywords
- group
- acid
- substituted
- resist composition
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002253 acid Substances 0.000 description 10
- 230000005855 radiation Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000002950 monocyclic group Chemical group 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical group C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001032855A JP4145017B2 (ja) | 2001-02-08 | 2001-02-08 | 感放射線性レジスト組成物 |
| KR1020020005898A KR100796585B1 (ko) | 2001-02-08 | 2002-02-01 | 감방사선성 레지스트 조성물 |
| TW091101972A TW571178B (en) | 2001-02-08 | 2002-02-05 | Irradiation-sensitive resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001032855A JP4145017B2 (ja) | 2001-02-08 | 2001-02-08 | 感放射線性レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002236358A JP2002236358A (ja) | 2002-08-23 |
| JP2002236358A5 true JP2002236358A5 (enExample) | 2006-01-19 |
| JP4145017B2 JP4145017B2 (ja) | 2008-09-03 |
Family
ID=18896715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001032855A Expired - Fee Related JP4145017B2 (ja) | 2001-02-08 | 2001-02-08 | 感放射線性レジスト組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4145017B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1299774A4 (en) * | 2001-04-05 | 2005-06-08 | Arch Spec Chem Inc | PHOTOACID GENERATORS FOR USE IN PHOTORESIN COMPOSITIONS |
| JP4271968B2 (ja) | 2003-03-13 | 2009-06-03 | 富士フイルム株式会社 | ポジ型又はネガ型レジスト組成物及び化合物 |
| JP4533639B2 (ja) * | 2003-07-22 | 2010-09-01 | 富士フイルム株式会社 | 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法 |
| JP2005084240A (ja) * | 2003-09-05 | 2005-03-31 | Fuji Photo Film Co Ltd | 感刺激性組成物、化合物及び感刺激性組成物を用いたパターン形成方法 |
| WO2010067627A1 (ja) * | 2008-12-11 | 2010-06-17 | 出光興産株式会社 | 酸解離性溶解抑止基前駆体、及び酸解離性溶解抑止基を有する環状化合物 |
| JP6030818B2 (ja) * | 2009-06-23 | 2016-11-24 | 住友化学株式会社 | レジスト組成物の酸発生剤用の塩 |
| JP6706955B2 (ja) * | 2015-04-08 | 2020-06-10 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| US9950999B2 (en) | 2016-08-12 | 2018-04-24 | International Business Machines Corporation | Non-ionic low diffusing photo-acid generators |
| US9983475B2 (en) | 2016-08-12 | 2018-05-29 | International Business Machines Corporation | Fluorinated sulfonate esters of aryl ketones for non-ionic photo-acid generators |
| KR20190085002A (ko) * | 2016-11-30 | 2019-07-17 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 화합물, 수지, 조성물 그리고 레지스트패턴 형성방법 및 회로패턴 형성방법 |
| KR20230130703A (ko) * | 2021-02-15 | 2023-09-12 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막,패턴 형성 방법, 전자 디바이스의 제조 방법 |
| JPWO2022220189A1 (enExample) * | 2021-04-15 | 2022-10-20 | ||
| WO2023127692A1 (ja) * | 2021-12-28 | 2023-07-06 | 東京応化工業株式会社 | レジスト組成物、及び、レジストパターン形成方法 |
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2001
- 2001-02-08 JP JP2001032855A patent/JP4145017B2/ja not_active Expired - Fee Related