JP4145017B2 - 感放射線性レジスト組成物 - Google Patents

感放射線性レジスト組成物 Download PDF

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Publication number
JP4145017B2
JP4145017B2 JP2001032855A JP2001032855A JP4145017B2 JP 4145017 B2 JP4145017 B2 JP 4145017B2 JP 2001032855 A JP2001032855 A JP 2001032855A JP 2001032855 A JP2001032855 A JP 2001032855A JP 4145017 B2 JP4145017 B2 JP 4145017B2
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JP
Japan
Prior art keywords
group
substituted
acid
general formula
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001032855A
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English (en)
Japanese (ja)
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JP2002236358A5 (enExample
JP2002236358A (ja
Inventor
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001032855A priority Critical patent/JP4145017B2/ja
Priority to KR1020020005898A priority patent/KR100796585B1/ko
Priority to TW091101972A priority patent/TW571178B/zh
Publication of JP2002236358A publication Critical patent/JP2002236358A/ja
Publication of JP2002236358A5 publication Critical patent/JP2002236358A5/ja
Application granted granted Critical
Publication of JP4145017B2 publication Critical patent/JP4145017B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001032855A 2001-02-08 2001-02-08 感放射線性レジスト組成物 Expired - Fee Related JP4145017B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001032855A JP4145017B2 (ja) 2001-02-08 2001-02-08 感放射線性レジスト組成物
KR1020020005898A KR100796585B1 (ko) 2001-02-08 2002-02-01 감방사선성 레지스트 조성물
TW091101972A TW571178B (en) 2001-02-08 2002-02-05 Irradiation-sensitive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001032855A JP4145017B2 (ja) 2001-02-08 2001-02-08 感放射線性レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002236358A JP2002236358A (ja) 2002-08-23
JP2002236358A5 JP2002236358A5 (enExample) 2006-01-19
JP4145017B2 true JP4145017B2 (ja) 2008-09-03

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ID=18896715

Family Applications (1)

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JP2001032855A Expired - Fee Related JP4145017B2 (ja) 2001-02-08 2001-02-08 感放射線性レジスト組成物

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JP (1) JP4145017B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9950999B2 (en) 2016-08-12 2018-04-24 International Business Machines Corporation Non-ionic low diffusing photo-acid generators
US9983475B2 (en) 2016-08-12 2018-05-29 International Business Machines Corporation Fluorinated sulfonate esters of aryl ketones for non-ionic photo-acid generators

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004519520A (ja) * 2001-04-05 2004-07-02 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド フォトレジストのためのパーフルオロアルキルスルフォン酸化合物
JP4271968B2 (ja) 2003-03-13 2009-06-03 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物及び化合物
JP4533639B2 (ja) * 2003-07-22 2010-09-01 富士フイルム株式会社 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法
JP2005084240A (ja) * 2003-09-05 2005-03-31 Fuji Photo Film Co Ltd 感刺激性組成物、化合物及び感刺激性組成物を用いたパターン形成方法
WO2010067627A1 (ja) * 2008-12-11 2010-06-17 出光興産株式会社 酸解離性溶解抑止基前駆体、及び酸解離性溶解抑止基を有する環状化合物
JP6030818B2 (ja) * 2009-06-23 2016-11-24 住友化学株式会社 レジスト組成物の酸発生剤用の塩
JP6706955B2 (ja) * 2015-04-08 2020-06-10 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US20210070683A1 (en) * 2016-11-30 2021-03-11 Mitsubishi Gas Chemical Company, Inc. Compound, resin, composition, resist pattern formation method and circuit pattern formation method
JP7756117B2 (ja) * 2021-02-15 2025-10-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2022220189A1 (ja) * 2021-04-15 2022-10-20 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
US20250355354A1 (en) * 2021-12-28 2025-11-20 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method for forming resist pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9950999B2 (en) 2016-08-12 2018-04-24 International Business Machines Corporation Non-ionic low diffusing photo-acid generators
US9983475B2 (en) 2016-08-12 2018-05-29 International Business Machines Corporation Fluorinated sulfonate esters of aryl ketones for non-ionic photo-acid generators

Also Published As

Publication number Publication date
JP2002236358A (ja) 2002-08-23

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