JP2004523830A5 - - Google Patents

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Publication number
JP2004523830A5
JP2004523830A5 JP2002562029A JP2002562029A JP2004523830A5 JP 2004523830 A5 JP2004523830 A5 JP 2004523830A5 JP 2002562029 A JP2002562029 A JP 2002562029A JP 2002562029 A JP2002562029 A JP 2002562029A JP 2004523830 A5 JP2004523830 A5 JP 2004523830A5
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JP
Japan
Prior art keywords
capacitor
nmos
devices
terminal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002562029A
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English (en)
Japanese (ja)
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JP4422408B2 (ja
JP2004523830A (ja
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Publication date
Priority claimed from US09/773,404 external-priority patent/US6407623B1/en
Application filed filed Critical
Publication of JP2004523830A publication Critical patent/JP2004523830A/ja
Publication of JP2004523830A5 publication Critical patent/JP2004523830A5/ja
Application granted granted Critical
Publication of JP4422408B2 publication Critical patent/JP4422408B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002562029A 2001-01-31 2002-01-30 負荷容量によって分割された相互コンダクタンスの一定値を維持するためのバイアス回路 Expired - Fee Related JP4422408B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/773,404 US6407623B1 (en) 2001-01-31 2001-01-31 Bias circuit for maintaining a constant value of transconductance divided by load capacitance
PCT/US2002/003012 WO2002061519A2 (en) 2001-01-31 2002-01-30 Bias circuit for maintaining a constant value of transconductance divided by load capacitance

Publications (3)

Publication Number Publication Date
JP2004523830A JP2004523830A (ja) 2004-08-05
JP2004523830A5 true JP2004523830A5 (enExample) 2005-12-22
JP4422408B2 JP4422408B2 (ja) 2010-02-24

Family

ID=25098165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002562029A Expired - Fee Related JP4422408B2 (ja) 2001-01-31 2002-01-30 負荷容量によって分割された相互コンダクタンスの一定値を維持するためのバイアス回路

Country Status (8)

Country Link
US (1) US6407623B1 (enExample)
EP (1) EP1356356A2 (enExample)
JP (1) JP4422408B2 (enExample)
CN (1) CN100380266C (enExample)
BR (1) BR0206834A (enExample)
CA (1) CA2437193C (enExample)
IL (2) IL157141A (enExample)
WO (1) WO2002061519A2 (enExample)

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CA2166450C (en) * 1995-01-20 2008-03-25 Ronald Salovey Chemically crosslinked ultrahigh molecular weight polyethylene for artificial human joints
WO2004042782A2 (en) * 2002-10-15 2004-05-21 Agency For Science, Technology And Research Apparatus and method for implementing a constant transconductance circuit
US6946896B2 (en) * 2003-05-29 2005-09-20 Broadcom Corporation High temperature coefficient MOS bias generation circuit
JP2006146916A (ja) * 2004-11-22 2006-06-08 Samsung Sdi Co Ltd カレントミラー回路及びこれを利用した駆動回路と駆動方法
EP1679795B1 (fr) * 2005-01-10 2016-10-26 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Structure de polarisation pour filtre à temps continu
CN100386706C (zh) * 2005-02-25 2008-05-07 清华大学 调整负载中晶体管跨导变化范围用的偏置补偿电路
US20060226892A1 (en) * 2005-04-12 2006-10-12 Stmicroelectronics S.A. Circuit for generating a reference current
US7265625B2 (en) * 2005-10-04 2007-09-04 Analog Devices, Inc. Amplifier systems with low-noise, constant-transconductance bias generators
US7307476B2 (en) * 2006-02-17 2007-12-11 Semiconductor Components Industries, L.L.C. Method for nullifying temperature dependence and circuit therefor
JP5262718B2 (ja) * 2006-09-29 2013-08-14 富士通株式会社 バイアス回路
US7741827B2 (en) * 2007-05-01 2010-06-22 Semiconductor Components Industries, Llc Parameter control circuit including charging and discharging current mirrors and method therefor
US8044654B2 (en) 2007-05-18 2011-10-25 Analog Devices, Inc. Adaptive bias current generator methods and apparatus
CN101471632B (zh) * 2007-12-26 2011-07-20 中国科学院微电子研究所 环路增益可控的自偏置低压运算跨导放大器电路
TWI435543B (zh) * 2008-02-06 2014-04-21 Mediatek Inc 半導體電路及減輕半導體電路中電流變動的方法
EP2124125A1 (en) * 2008-05-21 2009-11-25 Seiko Epson Corporation Process and temperature compensation in CMOS circuits
US7750837B2 (en) * 2008-08-01 2010-07-06 Qualcomm Incorporated Adaptive bias current generation for switched-capacitor circuits
US7982526B2 (en) * 2008-09-17 2011-07-19 Qualcomm, Incorporated Active-time dependent bias current generation for switched-capacitor circuits
JP5515708B2 (ja) * 2009-12-11 2014-06-11 富士通株式会社 バイアス回路及びそれを有する増幅回路
US8390371B2 (en) * 2010-07-30 2013-03-05 Tialinx, Inc. Tunable transconductance-capacitance filter with coefficients independent of variations in process corner, temperature, and input supply voltage
JP2012119835A (ja) * 2010-11-30 2012-06-21 Asahi Kasei Electronics Co Ltd アクティブフィルタ
CN102969990A (zh) * 2011-09-01 2013-03-13 联咏科技股份有限公司 具动态转导补偿的多输入差动放大器
CN102437820B (zh) * 2011-12-21 2014-11-26 苏州云芯微电子科技有限公司 一种降低相位噪声引入的时钟放大电路
US9194890B2 (en) * 2013-05-09 2015-11-24 Freescale Semiconductor, Inc. Metal-oxide-semiconductor (MOS) voltage divider with dynamic impedance control
CN104796092B (zh) * 2014-01-22 2018-02-13 上海华虹集成电路有限责任公司 均衡电路
US9413297B2 (en) 2014-03-09 2016-08-09 National Chiao Tung University Constant transconductance bias circuit
CN104579206B (zh) * 2014-07-30 2017-08-08 上海华虹宏力半导体制造有限公司 差分放大电路及运算放大器
WO2016060556A1 (en) 2014-10-13 2016-04-21 Greenpeak Technologies B.V. Switched capacitor biasing circuit
JP2016122897A (ja) * 2014-12-24 2016-07-07 三菱電機株式会社 分周回路
EP3487076A1 (en) 2017-11-15 2019-05-22 ams AG Phase-locked loop circuitry having low variation transconductance design
CN108566173B (zh) * 2018-06-11 2024-11-26 杨俊杰 一种采用cmos工艺芯片内部的rc时间常数校正电路
CN109672418A (zh) * 2018-12-19 2019-04-23 佛山臻智微芯科技有限公司 一种采用前馈补偿的高增益运算放大器
CN109639135B (zh) * 2019-01-22 2024-03-01 上海艾为电子技术股份有限公司 一种电荷泵电路
US11251759B2 (en) 2020-01-30 2022-02-15 Texas Instruments Incorporated Operational amplifier input stage with high common mode voltage rejection
KR102874679B1 (ko) 2020-10-07 2025-10-22 삼성전자주식회사 증폭기 및 증폭기를 포함하는 전자 장치
CN114265461A (zh) * 2021-12-15 2022-04-01 深圳飞骧科技股份有限公司 一种基准电压源
CN118017941B (zh) * 2024-04-10 2024-11-26 上海安其威微电子科技有限公司 一种放大器芯片及偏置校准方法
CN118655948B (zh) * 2024-08-20 2024-10-22 成都玖锦科技有限公司 基于电容耦合的快速动态偏置电路

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KR940003301B1 (ko) * 1991-12-20 1994-04-20 주식회사 금성사 Ce버스 심볼 엔코딩 처리회로
JP3318365B2 (ja) * 1992-10-20 2002-08-26 富士通株式会社 定電圧回路
US5550510A (en) * 1994-12-27 1996-08-27 Lucent Technologies Inc. Constant transconductance CMOS amplifier input stage with rail-to-rail input common mode voltage range
US5656957A (en) * 1995-10-19 1997-08-12 Sgs-Thomson Microelectronics, Inc. Comparator circuit with hysteresis
JPH10322144A (ja) * 1997-05-16 1998-12-04 Matsushita Electric Ind Co Ltd 電力増幅器及びその調整方法
US6144249A (en) * 1998-01-15 2000-11-07 Chrontel, Inc. Clock-referenced switching bias current generator
JP3348019B2 (ja) * 1998-07-06 2002-11-20 シャープ株式会社 パルス波増幅装置
JP2000040924A (ja) * 1998-07-24 2000-02-08 Nec Corp 定電流駆動回路
JP2000039926A (ja) * 1998-07-24 2000-02-08 Canon Inc 電流出力回路
JP2953465B1 (ja) * 1998-08-14 1999-09-27 日本電気株式会社 定電流駆動回路
JP4508425B2 (ja) * 1998-12-17 2010-07-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 回路装置
US6323725B1 (en) * 1999-03-31 2001-11-27 Qualcomm Incorporated Constant transconductance bias circuit having body effect cancellation circuitry
JP4015319B2 (ja) * 1999-07-12 2007-11-28 富士通株式会社 定電流発生回路および差動増幅回路
US6300805B1 (en) * 1999-09-30 2001-10-09 Texas Instruments Incorporated Circuit for auto-zeroing a high impedance CMOS current driver

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