JPWO2020240339A5 - - Google Patents

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Publication number
JPWO2020240339A5
JPWO2020240339A5 JP2021523129A JP2021523129A JPWO2020240339A5 JP WO2020240339 A5 JPWO2020240339 A5 JP WO2020240339A5 JP 2021523129 A JP2021523129 A JP 2021523129A JP 2021523129 A JP2021523129 A JP 2021523129A JP WO2020240339 A5 JPWO2020240339 A5 JP WO2020240339A5
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JP
Japan
Prior art keywords
transistor
terminal
drain
source
electrically connected
Prior art date
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Application number
JP2021523129A
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English (en)
Japanese (ja)
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JPWO2020240339A1 (enExample
JP7704677B2 (ja
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Priority claimed from PCT/IB2020/054711 external-priority patent/WO2020240339A1/ja
Publication of JPWO2020240339A1 publication Critical patent/JPWO2020240339A1/ja
Publication of JPWO2020240339A5 publication Critical patent/JPWO2020240339A5/ja
Application granted granted Critical
Publication of JP7704677B2 publication Critical patent/JP7704677B2/ja
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JP2021523129A 2019-05-31 2020-05-19 通信装置 Active JP7704677B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019102029 2019-05-31
JP2019102036 2019-05-31
JP2019102029 2019-05-31
JP2019102036 2019-05-31
PCT/IB2020/054711 WO2020240339A1 (ja) 2019-05-31 2020-05-19 通信装置

Publications (3)

Publication Number Publication Date
JPWO2020240339A1 JPWO2020240339A1 (enExample) 2020-12-03
JPWO2020240339A5 true JPWO2020240339A5 (enExample) 2023-05-15
JP7704677B2 JP7704677B2 (ja) 2025-07-08

Family

ID=73552694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021523129A Active JP7704677B2 (ja) 2019-05-31 2020-05-19 通信装置

Country Status (3)

Country Link
US (1) US12289083B2 (enExample)
JP (1) JP7704677B2 (enExample)
WO (1) WO2020240339A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7725364B2 (ja) 2019-05-24 2025-08-19 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP2023063080A (ja) * 2021-10-22 2023-05-09 ローム株式会社 半導体集積回路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1187890C (zh) 1998-07-07 2005-02-02 松下电器产业株式会社 半导体放大器电路与系统
JP2003078355A (ja) 2001-09-05 2003-03-14 Mitsubishi Electric Corp ミキサ回路
US7868691B2 (en) * 2008-01-09 2011-01-11 Quintic Holdings Commutating amplifier with wide dynamic range
KR101281991B1 (ko) 2005-07-27 2013-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2007125977A1 (en) 2006-04-27 2007-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic appliance using the same
EP2058944B1 (en) 2006-08-28 2012-06-27 Asahi Kasei EMD Corporation Transconductance amplifier
US20100226411A1 (en) 2006-09-20 2010-09-09 Manabu Watanabe Low-noise amplifier and radio communication system
JP5889586B2 (ja) 2010-09-27 2016-03-22 株式会社半導体エネルギー研究所 基準電流生成回路、基準電圧生成回路、及び温度検出回路
WO2013172220A1 (en) 2012-05-18 2013-11-21 Semiconductor Energy Laboratory Co., Ltd. Pixel circuit, display device, and electronic device
US9171842B2 (en) 2012-07-30 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Sequential circuit and semiconductor device
CN106063298B (zh) 2014-03-05 2019-07-12 华为技术有限公司 用于自定义的第五代网络的系统与方法
US10360855B2 (en) 2015-08-17 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, and electronic device
US10211797B2 (en) * 2016-07-12 2019-02-19 Teledyne Scientific & Imaging, Llc Bidirectional amplifier

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