JP2017228751A5 - - Google Patents

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Publication number
JP2017228751A5
JP2017228751A5 JP2016141123A JP2016141123A JP2017228751A5 JP 2017228751 A5 JP2017228751 A5 JP 2017228751A5 JP 2016141123 A JP2016141123 A JP 2016141123A JP 2016141123 A JP2016141123 A JP 2016141123A JP 2017228751 A5 JP2017228751 A5 JP 2017228751A5
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JP
Japan
Prior art keywords
transistor
drain
source
electrically connected
wiring
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JP2016141123A
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English (en)
Japanese (ja)
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JP6905316B2 (ja
JP2017228751A (ja
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Publication of JP2017228751A5 publication Critical patent/JP2017228751A5/ja
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Publication of JP6905316B2 publication Critical patent/JP6905316B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016141123A 2015-07-21 2016-07-19 半導体装置 Expired - Fee Related JP6905316B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015143919 2015-07-21
JP2015143919 2015-07-21
JP2016119551 2016-06-16
JP2016119551 2016-06-16

Publications (3)

Publication Number Publication Date
JP2017228751A JP2017228751A (ja) 2017-12-28
JP2017228751A5 true JP2017228751A5 (enExample) 2019-08-29
JP6905316B2 JP6905316B2 (ja) 2021-07-21

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ID=57837415

Family Applications (1)

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JP2016141123A Expired - Fee Related JP6905316B2 (ja) 2015-07-21 2016-07-19 半導体装置

Country Status (2)

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US (1) US9768174B2 (enExample)
JP (1) JP6905316B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10545526B2 (en) 2015-06-25 2020-01-28 Semiconductor Energy Laboratory Co., Ltd. Circuit, driving method thereof, and semiconductor device
KR20170061602A (ko) 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
CN108573983B (zh) * 2017-03-13 2021-08-17 京东方科技集团股份有限公司 光学探测器及其制备方法、指纹识别传感器、显示装置
US12014770B2 (en) 2017-10-17 2024-06-18 R&D3 Llc Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein
US10269413B1 (en) * 2017-10-17 2019-04-23 R&D 3 Llc Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein
JPWO2021084959A1 (enExample) * 2019-10-29 2021-05-06

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3107305B2 (ja) * 1989-12-08 2000-11-06 株式会社日立製作所 半導体装置
US5796671A (en) * 1996-03-01 1998-08-18 Wahlstrom; Sven E. Dynamic random access memory
US6754439B1 (en) 1998-04-06 2004-06-22 Seachange International, Inc. Method and apparatus for using multiple compressed digital video and audio signals
JP3892655B2 (ja) * 1999-09-17 2007-03-14 株式会社東芝 半導体集積回路装置
DE10125800B4 (de) * 2001-05-26 2006-11-02 Infineon Technologies Ag Speicherbaustein mit einer Speicherzelle und Verfahren zur Herstellung eines Speicherbausteins
JP3821066B2 (ja) * 2002-07-04 2006-09-13 日本電気株式会社 磁気ランダムアクセスメモリ
US7035131B2 (en) * 2004-05-06 2006-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dynamic random access memory cell leakage current detector
WO2006003852A1 (en) 2004-07-02 2006-01-12 Matsushita Electric Industrial Co., Ltd. Av stream reproducing apparatus, decoder switching method, method program, program storage medium, and integrated circuit
JP4890016B2 (ja) * 2005-03-16 2012-03-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US20090027254A1 (en) 2007-02-16 2009-01-29 James Roy Troxel Method and apparatus to improve the ability to decode ads-b squitters through multiple processing paths
WO2009090829A1 (ja) * 2008-01-17 2009-07-23 Nec Corporation 半導体記憶装置および半導体記憶装置におけるデータ読出し方法
IN2012DN05920A (enExample) 2010-01-20 2015-09-18 Semiconductor Energy Lab
WO2011099360A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
KR102509203B1 (ko) 2014-08-29 2023-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
WO2016034983A1 (en) 2014-09-02 2016-03-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device

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