JP2004521052A - 高純度・低比抵抗の静電チャック - Google Patents

高純度・低比抵抗の静電チャック Download PDF

Info

Publication number
JP2004521052A
JP2004521052A JP2001543466A JP2001543466A JP2004521052A JP 2004521052 A JP2004521052 A JP 2004521052A JP 2001543466 A JP2001543466 A JP 2001543466A JP 2001543466 A JP2001543466 A JP 2001543466A JP 2004521052 A JP2004521052 A JP 2004521052A
Authority
JP
Japan
Prior art keywords
temperature
atmosphere
polycrystalline
green body
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001543466A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004521052A5 (https=
Inventor
ディバカー，ラメシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Saint Gobain Ceramics and Plastics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics and Plastics Inc filed Critical Saint Gobain Ceramics and Plastics Inc
Publication of JP2004521052A publication Critical patent/JP2004521052A/ja
Publication of JP2004521052A5 publication Critical patent/JP2004521052A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2001543466A 1999-12-09 2000-12-05 高純度・低比抵抗の静電チャック Withdrawn JP2004521052A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/458,278 US6723274B1 (en) 1999-12-09 1999-12-09 High-purity low-resistivity electrostatic chucks
PCT/US2000/042555 WO2001042163A2 (en) 1999-12-09 2000-12-05 High-purity low-resistivity electrostatic chucks

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009030499A Division JP2009173537A (ja) 1999-12-09 2009-02-12 高純度・低比抵抗の静電チャック

Publications (2)

Publication Number Publication Date
JP2004521052A true JP2004521052A (ja) 2004-07-15
JP2004521052A5 JP2004521052A5 (https=) 2005-04-14

Family

ID=23820126

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001543466A Withdrawn JP2004521052A (ja) 1999-12-09 2000-12-05 高純度・低比抵抗の静電チャック
JP2009030499A Pending JP2009173537A (ja) 1999-12-09 2009-02-12 高純度・低比抵抗の静電チャック

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009030499A Pending JP2009173537A (ja) 1999-12-09 2009-02-12 高純度・低比抵抗の静電チャック

Country Status (8)

Country Link
US (1) US6723274B1 (https=)
JP (2) JP2004521052A (https=)
KR (1) KR20020059439A (https=)
CN (1) CN1313420C (https=)
AU (1) AU4516201A (https=)
DE (1) DE10085278B4 (https=)
GB (1) GB2373497A (https=)
WO (1) WO2001042163A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010120822A (ja) * 2008-11-21 2010-06-03 Ngk Insulators Ltd 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
JP2014214069A (ja) * 2013-04-27 2014-11-17 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
JP2023518438A (ja) * 2020-03-27 2023-05-01 烟台睿瓷新材料技術有限公司 多層複合セラミックスプレート及びその製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603650B1 (en) * 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
KR20020059438A (ko) * 1999-12-09 2002-07-12 보스트 스티븐 엘. 편평한 막 전극을 갖는 정전 척
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
US7369393B2 (en) * 2004-04-15 2008-05-06 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks having barrier layer
US8187525B2 (en) * 2007-08-31 2012-05-29 Corning Incorporated Method of firing green bodies into porous ceramic articles
TWI475594B (zh) 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
JP5931862B2 (ja) 2010-07-20 2016-06-08 ヘクサテック，インコーポレイテッド 多結晶窒化アルミニウム材料およびその製造方法
JP6159982B2 (ja) * 2012-06-28 2017-07-12 日本特殊陶業株式会社 静電チャックの製造方法
KR102339550B1 (ko) 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
JP7338674B2 (ja) * 2021-12-24 2023-09-05 住友大阪セメント株式会社 静電チャック部材、静電チャック装置、および静電チャック部材の製造方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944797A (ja) 1982-09-07 1984-03-13 増田　閃一 物体の静電的処理装置
JPS60151280A (ja) * 1984-01-19 1985-08-09 日本電気株式会社 窒化アルミニウム焼結体の製造方法
DE3608326A1 (de) 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
US4778778A (en) * 1987-06-03 1988-10-18 Keramont Advanced Ceramic Products Corporation Process for the production of sintered aluminum nitrides
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JPH0617214B2 (ja) 1989-12-29 1994-03-09 ナショナル サイエンス カウンシル 超微粒子な窒化アルミニウム粉末の製造方法
DE69130205T2 (de) 1990-12-25 1999-03-25 Ngk Insulators, Ltd., Nagoya, Aichi Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
EP0506537A1 (en) 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH0659008A (ja) 1992-08-06 1994-03-04 Sumitomo Electric Ind Ltd 物性測定装置およびその測定方法
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5320990A (en) * 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
US5457075A (en) * 1993-05-11 1995-10-10 Hitachi Metals, Ltd. Sintered ceramic composite and molten metal contact member produced therefrom
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
EP0680075B1 (en) 1993-11-18 2001-11-28 Ngk Insulators, Ltd. Electrode for generating plasma and method for manufacturing the electrode
US5541145A (en) 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
KR100430643B1 (ko) 1994-01-31 2004-05-12 어플라이드 머티어리얼스, 인코포레이티드 두께가 균일한 절연체 막을 갖는 정전기 척
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5817406A (en) 1995-07-14 1998-10-06 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and brazing material connection
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
EP0992470B1 (en) 1995-08-03 2006-03-08 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
JP3670416B2 (ja) 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
US6017485A (en) 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
JP3670444B2 (ja) 1997-06-06 2005-07-13 日本碍子株式会社 窒化アルミニウム基複合体、電子機能材料、静電チャックおよび窒化アルミニウム基複合体の製造方法
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010120822A (ja) * 2008-11-21 2010-06-03 Ngk Insulators Ltd 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
JP2014214069A (ja) * 2013-04-27 2014-11-17 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
JP2023518438A (ja) * 2020-03-27 2023-05-01 烟台睿瓷新材料技術有限公司 多層複合セラミックスプレート及びその製造方法
JP7573641B2 (ja) 2020-03-27 2024-10-25 烟台睿瓷新材料技術有限公司 多層複合セラミックスプレート及びその製造方法
US12195402B2 (en) 2020-03-27 2025-01-14 Raycer Advanced Materials Technology Co., Ltd Multi-layer composite ceramic plate and manufacturing method thereof

Also Published As

Publication number Publication date
DE10085278T1 (de) 2002-12-12
JP2009173537A (ja) 2009-08-06
CN1313420C (zh) 2007-05-02
CN1407956A (zh) 2003-04-02
KR20020059439A (ko) 2002-07-12
WO2001042163A3 (en) 2002-03-07
WO2001042163A2 (en) 2001-06-14
DE10085278B4 (de) 2008-10-16
GB2373497A (en) 2002-09-25
US6723274B1 (en) 2004-04-20
GB0215873D0 (en) 2002-08-14
AU4516201A (en) 2001-06-18

Similar Documents

Publication Publication Date Title
JP2009173537A (ja) 高純度・低比抵抗の静電チャック
TWI445682B (zh) Alumina sintered body, and its manufacturing method and semiconductor manufacturing device parts
JP2000058631A5 (https=)
JPH1072260A (ja) 窒化アルミニウム焼結体、金属包含材、静電チャック、窒化アルミニウム焼結体の製造方法および金属包含材の製造方法
JP7412242B2 (ja) 積層構造体および半導体製造装置部材
KR102497967B1 (ko) 복합 소결체, 반도체 제조 장치 부재 및 복합 소결체의 제조 방법
KR100445050B1 (ko) 질화알루미늄 소결체 및 반도체 제조장치용 부재
JP4987238B2 (ja) 窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法
US20090283933A1 (en) Ceramic member and method for producing the same
JP2002249379A (ja) 窒化アルミニウム焼結体及び半導体製造装置用部材
JP7227954B2 (ja) 複合焼結体、半導体製造装置部材および複合焼結体の製造方法
JP2025028348A (ja) 複合焼結体および複合焼結体の製造方法
JP3740383B2 (ja) 保持装置
JP2002220282A (ja) 窒化アルミニウム焼結体とその製造方法
JP2004273866A (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JPH11100271A (ja) セラミック抵抗体およびそれを用いた静電チャック
JP2002231796A (ja) 静電チャック
CN110294630A (zh) 复合烧结体、半导体制造装置部件和复合烧结体的制造方法
JP2003282689A (ja) 静電チャック及びその製造方法
WO2026078944A1 (ja) 窒化アルミニウム焼結体
JP2004235483A (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP2004253665A (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP2004247365A (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP2004241599A (ja) 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JP2000185974A (ja) 窒化アルミニウム焼結体の製造方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060926

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20061225

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070326

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070911

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20071210

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20071217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080812

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081111

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081118

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090512

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090814