KR20020059439A - 고순도 저저항 정전 척 - Google Patents

고순도 저저항 정전 척 Download PDF

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Publication number
KR20020059439A
KR20020059439A KR1020027007244A KR20027007244A KR20020059439A KR 20020059439 A KR20020059439 A KR 20020059439A KR 1020027007244 A KR1020027007244 A KR 1020027007244A KR 20027007244 A KR20027007244 A KR 20027007244A KR 20020059439 A KR20020059439 A KR 20020059439A
Authority
KR
South Korea
Prior art keywords
temperature
atmosphere
polycrystalline
aluminum nitride
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020027007244A
Other languages
English (en)
Korean (ko)
Inventor
디바카라메쉬
Original Assignee
보스트 스티븐 엘.
생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 보스트 스티븐 엘., 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 filed Critical 보스트 스티븐 엘.
Publication of KR20020059439A publication Critical patent/KR20020059439A/ko
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020027007244A 1999-12-09 2000-12-05 고순도 저저항 정전 척 Ceased KR20020059439A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/458,278 US6723274B1 (en) 1999-12-09 1999-12-09 High-purity low-resistivity electrostatic chucks
US09/458,278 1999-12-09
PCT/US2000/042555 WO2001042163A2 (en) 1999-12-09 2000-12-05 High-purity low-resistivity electrostatic chucks

Publications (1)

Publication Number Publication Date
KR20020059439A true KR20020059439A (ko) 2002-07-12

Family

ID=23820126

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027007244A Ceased KR20020059439A (ko) 1999-12-09 2000-12-05 고순도 저저항 정전 척

Country Status (8)

Country Link
US (1) US6723274B1 (https=)
JP (2) JP2004521052A (https=)
KR (1) KR20020059439A (https=)
CN (1) CN1313420C (https=)
AU (1) AU4516201A (https=)
DE (1) DE10085278B4 (https=)
GB (1) GB2373497A (https=)
WO (1) WO2001042163A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220144859A (ko) * 2020-03-27 2022-10-27 레이서 어드밴스드 머티리얼즈 테크놀로지 컴퍼니 리미티드 다층 복합 세라믹 플레이트 및 그 제조 방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6603650B1 (en) * 1999-12-09 2003-08-05 Saint-Gobain Ceramics And Plastics, Inc. Electrostatic chuck susceptor and method for fabrication
KR20020059438A (ko) * 1999-12-09 2002-07-12 보스트 스티븐 엘. 편평한 막 전극을 갖는 정전 척
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
US7369393B2 (en) * 2004-04-15 2008-05-06 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chucks having barrier layer
US8187525B2 (en) * 2007-08-31 2012-05-29 Corning Incorporated Method of firing green bodies into porous ceramic articles
TWI475594B (zh) 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
JP5180034B2 (ja) * 2008-11-21 2013-04-10 日本碍子株式会社 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8580593B2 (en) * 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
JP5931862B2 (ja) 2010-07-20 2016-06-08 ヘクサテック,インコーポレイテッド 多結晶窒化アルミニウム材料およびその製造方法
JP6159982B2 (ja) * 2012-06-28 2017-07-12 日本特殊陶業株式会社 静電チャックの製造方法
JP6039497B2 (ja) * 2013-04-27 2016-12-07 京セラ株式会社 半導電性セラミックスおよび半導電性セラミックスの製造方法
KR102339550B1 (ko) 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
JP7338674B2 (ja) * 2021-12-24 2023-09-05 住友大阪セメント株式会社 静電チャック部材、静電チャック装置、および静電チャック部材の製造方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944797A (ja) 1982-09-07 1984-03-13 増田 閃一 物体の静電的処理装置
JPS60151280A (ja) * 1984-01-19 1985-08-09 日本電気株式会社 窒化アルミニウム焼結体の製造方法
DE3608326A1 (de) 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
US4778778A (en) * 1987-06-03 1988-10-18 Keramont Advanced Ceramic Products Corporation Process for the production of sintered aluminum nitrides
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JPH0617214B2 (ja) 1989-12-29 1994-03-09 ナショナル サイエンス カウンシル 超微粒子な窒化アルミニウム粉末の製造方法
DE69130205T2 (de) 1990-12-25 1999-03-25 Ngk Insulators, Ltd., Nagoya, Aichi Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
EP1120817B8 (en) 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
EP0506537A1 (en) 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
JPH06737A (ja) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
JPH0659008A (ja) 1992-08-06 1994-03-04 Sumitomo Electric Ind Ltd 物性測定装置およびその測定方法
US5800618A (en) 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5413360A (en) 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5320990A (en) * 1993-03-30 1994-06-14 The Dow Chemical Company Process for sintering aluminum nitride to a high thermal conductivity and resultant sintered bodies
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
US5457075A (en) * 1993-05-11 1995-10-10 Hitachi Metals, Ltd. Sintered ceramic composite and molten metal contact member produced therefrom
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
EP0680075B1 (en) 1993-11-18 2001-11-28 Ngk Insulators, Ltd. Electrode for generating plasma and method for manufacturing the electrode
US5541145A (en) 1993-12-22 1996-07-30 The Carborundum Company/Ibm Corporation Low temperature sintering route for aluminum nitride ceramics
KR100430643B1 (ko) 1994-01-31 2004-05-12 어플라이드 머티어리얼스, 인코포레이티드 두께가 균일한 절연체 막을 갖는 정전기 척
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5817406A (en) 1995-07-14 1998-10-06 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and brazing material connection
US5633073A (en) 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
EP0992470B1 (en) 1995-08-03 2006-03-08 Ngk Insulators, Ltd. Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
JP3670416B2 (ja) 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
US6017485A (en) 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3790000B2 (ja) 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3954177B2 (ja) 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US6303879B1 (en) 1997-04-01 2001-10-16 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication
JP3670444B2 (ja) 1997-06-06 2005-07-13 日本碍子株式会社 窒化アルミニウム基複合体、電子機能材料、静電チャックおよび窒化アルミニウム基複合体の製造方法
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220144859A (ko) * 2020-03-27 2022-10-27 레이서 어드밴스드 머티리얼즈 테크놀로지 컴퍼니 리미티드 다층 복합 세라믹 플레이트 및 그 제조 방법
US12195402B2 (en) 2020-03-27 2025-01-14 Raycer Advanced Materials Technology Co., Ltd Multi-layer composite ceramic plate and manufacturing method thereof

Also Published As

Publication number Publication date
DE10085278T1 (de) 2002-12-12
JP2009173537A (ja) 2009-08-06
CN1313420C (zh) 2007-05-02
CN1407956A (zh) 2003-04-02
WO2001042163A3 (en) 2002-03-07
WO2001042163A2 (en) 2001-06-14
DE10085278B4 (de) 2008-10-16
JP2004521052A (ja) 2004-07-15
GB2373497A (en) 2002-09-25
US6723274B1 (en) 2004-04-20
GB0215873D0 (en) 2002-08-14
AU4516201A (en) 2001-06-18

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