JP2004520713A - 選択エミッター層を有する太陽電池 - Google Patents

選択エミッター層を有する太陽電池 Download PDF

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Publication number
JP2004520713A
JP2004520713A JP2002561294A JP2002561294A JP2004520713A JP 2004520713 A JP2004520713 A JP 2004520713A JP 2002561294 A JP2002561294 A JP 2002561294A JP 2002561294 A JP2002561294 A JP 2002561294A JP 2004520713 A JP2004520713 A JP 2004520713A
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Japan
Prior art keywords
doping
layer
solar cell
paste
oxide layer
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Pending
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JP2002561294A
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Japanese (ja)
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JP2004520713A5 (cg-RX-API-DMAC7.html
Inventor
アドルフ・ミュンツァー
ラインホルト・シュロッサー
Original Assignee
シェル・ゾラール・ゲーエムベーハー
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Application filed by シェル・ゾラール・ゲーエムベーハー filed Critical シェル・ゾラール・ゲーエムベーハー
Publication of JP2004520713A publication Critical patent/JP2004520713A/ja
Publication of JP2004520713A5 publication Critical patent/JP2004520713A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Printing Methods (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2002561294A 2001-02-02 2002-02-01 選択エミッター層を有する太陽電池 Pending JP2004520713A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10104726A DE10104726A1 (de) 2001-02-02 2001-02-02 Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht
PCT/EP2002/001096 WO2002061854A2 (de) 2001-02-02 2002-02-01 Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht

Publications (2)

Publication Number Publication Date
JP2004520713A true JP2004520713A (ja) 2004-07-08
JP2004520713A5 JP2004520713A5 (cg-RX-API-DMAC7.html) 2005-06-23

Family

ID=7672635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561294A Pending JP2004520713A (ja) 2001-02-02 2002-02-01 選択エミッター層を有する太陽電池

Country Status (8)

Country Link
US (1) US7129109B2 (cg-RX-API-DMAC7.html)
EP (1) EP1390987B1 (cg-RX-API-DMAC7.html)
JP (1) JP2004520713A (cg-RX-API-DMAC7.html)
CN (1) CN1316638C (cg-RX-API-DMAC7.html)
AT (1) ATE346382T1 (cg-RX-API-DMAC7.html)
AU (1) AU2002244699B2 (cg-RX-API-DMAC7.html)
DE (2) DE10104726A1 (cg-RX-API-DMAC7.html)
WO (1) WO2002061854A2 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011023690A (ja) * 2009-07-20 2011-02-03 E-Ton Solar Tech Co Ltd 選択エミッタ構造の電極パターンのアラインメント方法
JP4845742B2 (ja) * 2004-02-13 2011-12-28 シェル ゾーラー ゲーエムベーハー ウエハに液状ドーパント溶液を塗布するための機器

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US7129109B2 (en) 2006-10-31
EP1390987A2 (de) 2004-02-25
US20040110393A1 (en) 2004-06-10
DE50208787D1 (de) 2007-01-04
EP1390987B1 (de) 2006-11-22
CN1537334A (zh) 2004-10-13
WO2002061854A2 (de) 2002-08-08
DE10104726A1 (de) 2002-08-08
ATE346382T1 (de) 2006-12-15
AU2002244699B2 (en) 2006-08-31
WO2002061854A3 (de) 2003-12-11

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