ATE346382T1 - Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht - Google Patents

Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht

Info

Publication number
ATE346382T1
ATE346382T1 AT02712887T AT02712887T ATE346382T1 AT E346382 T1 ATE346382 T1 AT E346382T1 AT 02712887 T AT02712887 T AT 02712887T AT 02712887 T AT02712887 T AT 02712887T AT E346382 T1 ATE346382 T1 AT E346382T1
Authority
AT
Austria
Prior art keywords
oxide layer
structuring
layer applied
support material
printed
Prior art date
Application number
AT02712887T
Other languages
German (de)
English (en)
Inventor
Adolf Muenzer
Reinhold Schlosser
Original Assignee
Shell Solar Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shell Solar Gmbh filed Critical Shell Solar Gmbh
Application granted granted Critical
Publication of ATE346382T1 publication Critical patent/ATE346382T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Printing Methods (AREA)
  • Manufacturing Of Printed Wiring (AREA)
AT02712887T 2001-02-02 2002-02-01 Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht ATE346382T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10104726A DE10104726A1 (de) 2001-02-02 2001-02-02 Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht

Publications (1)

Publication Number Publication Date
ATE346382T1 true ATE346382T1 (de) 2006-12-15

Family

ID=7672635

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02712887T ATE346382T1 (de) 2001-02-02 2002-02-01 Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht

Country Status (8)

Country Link
US (1) US7129109B2 (cg-RX-API-DMAC7.html)
EP (1) EP1390987B1 (cg-RX-API-DMAC7.html)
JP (1) JP2004520713A (cg-RX-API-DMAC7.html)
CN (1) CN1316638C (cg-RX-API-DMAC7.html)
AT (1) ATE346382T1 (cg-RX-API-DMAC7.html)
AU (1) AU2002244699B2 (cg-RX-API-DMAC7.html)
DE (2) DE10104726A1 (cg-RX-API-DMAC7.html)
WO (1) WO2002061854A2 (cg-RX-API-DMAC7.html)

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Also Published As

Publication number Publication date
CN1316638C (zh) 2007-05-16
US7129109B2 (en) 2006-10-31
EP1390987A2 (de) 2004-02-25
US20040110393A1 (en) 2004-06-10
DE50208787D1 (de) 2007-01-04
EP1390987B1 (de) 2006-11-22
CN1537334A (zh) 2004-10-13
WO2002061854A2 (de) 2002-08-08
DE10104726A1 (de) 2002-08-08
AU2002244699B2 (en) 2006-08-31
WO2002061854A3 (de) 2003-12-11
JP2004520713A (ja) 2004-07-08

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