JP2004500673A - ローカルデータドライバと、プログラム可能な数のデータ読取り及びデータ書込みラインとを有する埋込み型ｄｒａｍアーキテクチャ - Google Patents
ローカルデータドライバと、プログラム可能な数のデータ読取り及びデータ書込みラインとを有する埋込み型ｄｒａｍアーキテクチャ Download PDFInfo
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- JP2004500673A JP2004500673A JP2000566853A JP2000566853A JP2004500673A JP 2004500673 A JP2004500673 A JP 2004500673A JP 2000566853 A JP2000566853 A JP 2000566853A JP 2000566853 A JP2000566853 A JP 2000566853A JP 2004500673 A JP2004500673 A JP 2004500673A
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- Prior art keywords
- memory
- data path
- circuit
- data
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/137,526 US6141286A (en) | 1998-08-21 | 1998-08-21 | Embedded DRAM architecture with local data drivers and programmable number of data read and data write lines |
| PCT/US1999/018765 WO2000011676A1 (en) | 1998-08-21 | 1999-08-18 | An embedded dram architecture with local data drivers and programmable number of data read and data write lines |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004500673A true JP2004500673A (ja) | 2004-01-08 |
| JP2004500673A5 JP2004500673A5 (https=) | 2005-01-27 |
Family
ID=22477833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000566853A Pending JP2004500673A (ja) | 1998-08-21 | 1999-08-18 | ローカルデータドライバと、プログラム可能な数のデータ読取り及びデータ書込みラインとを有する埋込み型ｄｒａｍアーキテクチャ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6141286A (https=) |
| JP (1) | JP2004500673A (https=) |
| KR (1) | KR100676864B1 (https=) |
| TW (1) | TW507213B (https=) |
| WO (1) | WO2000011676A1 (https=) |
Families Citing this family (177)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6411557B2 (en) | 2000-02-02 | 2002-06-25 | Broadcom Corporation | Memory architecture with single-port cell and dual-port (read and write) functionality |
| US6937538B2 (en) * | 2000-02-02 | 2005-08-30 | Broadcom Corporation | Asynchronously resettable decoder for a semiconductor memory |
| US6603712B2 (en) | 2000-02-02 | 2003-08-05 | Broadcom Corporation | High precision delay measurement circuit |
| US6745354B2 (en) | 2000-02-02 | 2004-06-01 | Broadcom Corporation | Memory redundancy implementation |
| US6611465B2 (en) * | 2000-02-02 | 2003-08-26 | Broadcom Corporation | Diffusion replica delay circuit |
| US8164362B2 (en) * | 2000-02-02 | 2012-04-24 | Broadcom Corporation | Single-ended sense amplifier with sample-and-hold reference |
| US6535025B2 (en) | 2000-02-02 | 2003-03-18 | Broadcom Corp. | Sense amplifier with offset cancellation and charge-share limited swing drivers |
| US6492844B2 (en) | 2000-02-02 | 2002-12-10 | Broadcom Corporation | Single-ended sense amplifier with sample-and-hold reference |
| US6414899B2 (en) * | 2000-02-02 | 2002-07-02 | Broadcom Corporation | Limited swing driver circuit |
| US7173867B2 (en) * | 2001-02-02 | 2007-02-06 | Broadcom Corporation | Memory redundancy circuit techniques |
| US6417697B2 (en) | 2000-02-02 | 2002-07-09 | Broadcom Corporation | Circuit technique for high speed low power data transfer bus |
| US6724681B2 (en) * | 2000-02-02 | 2004-04-20 | Broadcom Corporation | Asynchronously-resettable decoder with redundancy |
| US6704828B1 (en) * | 2000-08-31 | 2004-03-09 | Micron Technology, Inc. | System and method for implementing data pre-fetch having reduced data lines and/or higher data rates |
| JP2002184188A (ja) * | 2000-12-18 | 2002-06-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6714467B2 (en) * | 2002-03-19 | 2004-03-30 | Broadcom Corporation | Block redundancy implementation in heirarchical RAM's |
| KR100414715B1 (ko) * | 2001-07-03 | 2004-01-13 | (주)실리콘세븐 | 메모리 어레이별 구동이 가능한 분할 워드라인 구조의반도체 메모리 장치 |
| ITRM20010516A1 (it) * | 2001-08-29 | 2003-02-28 | Micron Technology Inc | Architettura a schiera di memorie flash. |
| US6594195B2 (en) | 2001-09-17 | 2003-07-15 | Cascade Semiconductor Corporation | Low-power, high-density semiconductor memory device |
| KR100800105B1 (ko) * | 2001-11-30 | 2008-02-01 | 매그나칩 반도체 유한회사 | 임베디드 디램 |
| US6728159B2 (en) * | 2001-12-21 | 2004-04-27 | International Business Machines Corporation | Flexible multibanking interface for embedded memory applications |
| US7076678B2 (en) * | 2002-02-11 | 2006-07-11 | Micron Technology, Inc. | Method and apparatus for data transfer |
| JP2004111643A (ja) * | 2002-09-18 | 2004-04-08 | Toshiba Corp | 半導体記憶装置、及び、その制御方法 |
| US6882590B2 (en) * | 2003-01-29 | 2005-04-19 | Micron Technology, Inc. | Multiple configuration multiple chip memory device and method |
| JP3967704B2 (ja) * | 2003-09-25 | 2007-08-29 | 株式会社東芝 | 半導体記憶装置とそのテスト方法 |
| JP2005340227A (ja) * | 2004-05-24 | 2005-12-08 | Hitachi Ltd | 半導体記憶装置と半導体装置 |
| US7236385B2 (en) * | 2004-06-30 | 2007-06-26 | Micron Technology, Inc. | Memory architecture |
| KR100614660B1 (ko) * | 2005-06-01 | 2006-08-22 | 삼성전자주식회사 | 반도체 기억 장치의 데이터 라인 및 그 형성방법 |
| US7352649B2 (en) * | 2005-07-21 | 2008-04-01 | Micron Technology, Inc. | High speed array pipeline architecture |
| TWI670711B (zh) | 2010-09-14 | 2019-09-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
| US8570824B2 (en) * | 2012-01-24 | 2013-10-29 | Apple Inc. | Memory having isolation units for isolating storage arrays from a shared I/O during retention mode operation |
| US9158667B2 (en) | 2013-03-04 | 2015-10-13 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
| US8964496B2 (en) | 2013-07-26 | 2015-02-24 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
| US8971124B1 (en) | 2013-08-08 | 2015-03-03 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
| US9153305B2 (en) | 2013-08-30 | 2015-10-06 | Micron Technology, Inc. | Independently addressable memory array address spaces |
| US9019785B2 (en) | 2013-09-19 | 2015-04-28 | Micron Technology, Inc. | Data shifting via a number of isolation devices |
| US9449675B2 (en) | 2013-10-31 | 2016-09-20 | Micron Technology, Inc. | Apparatuses and methods for identifying an extremum value stored in an array of memory cells |
| US9430191B2 (en) | 2013-11-08 | 2016-08-30 | Micron Technology, Inc. | Division operations for memory |
| US9934856B2 (en) | 2014-03-31 | 2018-04-03 | Micron Technology, Inc. | Apparatuses and methods for comparing data patterns in memory |
| US9711206B2 (en) | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
| US9704540B2 (en) | 2014-06-05 | 2017-07-11 | Micron Technology, Inc. | Apparatuses and methods for parity determination using sensing circuitry |
| US9496023B2 (en) | 2014-06-05 | 2016-11-15 | Micron Technology, Inc. | Comparison operations on logical representations of values in memory |
| US9910787B2 (en) | 2014-06-05 | 2018-03-06 | Micron Technology, Inc. | Virtual address table |
| US9786335B2 (en) | 2014-06-05 | 2017-10-10 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
| US9449674B2 (en) | 2014-06-05 | 2016-09-20 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
| US9779019B2 (en) | 2014-06-05 | 2017-10-03 | Micron Technology, Inc. | Data storage layout |
| US9711207B2 (en) | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
| US10074407B2 (en) | 2014-06-05 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for performing invert operations using sensing circuitry |
| US9830999B2 (en) | 2014-06-05 | 2017-11-28 | Micron Technology, Inc. | Comparison operations in memory |
| US9455020B2 (en) | 2014-06-05 | 2016-09-27 | Micron Technology, Inc. | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
| US9904515B2 (en) | 2014-09-03 | 2018-02-27 | Micron Technology, Inc. | Multiplication operations in memory |
| US9898252B2 (en) | 2014-09-03 | 2018-02-20 | Micron Technology, Inc. | Multiplication operations in memory |
| US9740607B2 (en) | 2014-09-03 | 2017-08-22 | Micron Technology, Inc. | Swap operations in memory |
| US9847110B2 (en) | 2014-09-03 | 2017-12-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector |
| US9747961B2 (en) | 2014-09-03 | 2017-08-29 | Micron Technology, Inc. | Division operations in memory |
| US9589602B2 (en) | 2014-09-03 | 2017-03-07 | Micron Technology, Inc. | Comparison operations in memory |
| US10068652B2 (en) | 2014-09-03 | 2018-09-04 | Micron Technology, Inc. | Apparatuses and methods for determining population count |
| US9940026B2 (en) | 2014-10-03 | 2018-04-10 | Micron Technology, Inc. | Multidimensional contiguous memory allocation |
| US9836218B2 (en) | 2014-10-03 | 2017-12-05 | Micron Technology, Inc. | Computing reduction and prefix sum operations in memory |
| US10163467B2 (en) | 2014-10-16 | 2018-12-25 | Micron Technology, Inc. | Multiple endianness compatibility |
| US10147480B2 (en) | 2014-10-24 | 2018-12-04 | Micron Technology, Inc. | Sort operation in memory |
| US9779784B2 (en) | 2014-10-29 | 2017-10-03 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
| US10073635B2 (en) | 2014-12-01 | 2018-09-11 | Micron Technology, Inc. | Multiple endianness compatibility |
| US9747960B2 (en) | 2014-12-01 | 2017-08-29 | Micron Technology, Inc. | Apparatuses and methods for converting a mask to an index |
| US10032493B2 (en) | 2015-01-07 | 2018-07-24 | Micron Technology, Inc. | Longest element length determination in memory |
| US10061590B2 (en) | 2015-01-07 | 2018-08-28 | Micron Technology, Inc. | Generating and executing a control flow |
| US9583163B2 (en) | 2015-02-03 | 2017-02-28 | Micron Technology, Inc. | Loop structure for operations in memory |
| WO2016126478A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for memory device as a store for program instructions |
| CN107408405B (zh) | 2015-02-06 | 2021-03-05 | 美光科技公司 | 用于并行写入到多个存储器装置位置的设备及方法 |
| WO2016126472A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for scatter and gather |
| WO2016144724A1 (en) | 2015-03-10 | 2016-09-15 | Micron Technology, Inc. | Apparatuses and methods for shift decisions |
| US9898253B2 (en) | 2015-03-11 | 2018-02-20 | Micron Technology, Inc. | Division operations on variable length elements in memory |
| US9741399B2 (en) | 2015-03-11 | 2017-08-22 | Micron Technology, Inc. | Data shift by elements of a vector in memory |
| WO2016144726A1 (en) | 2015-03-12 | 2016-09-15 | Micron Technology, Inc. | Apparatuses and methods for data movement |
| US10146537B2 (en) | 2015-03-13 | 2018-12-04 | Micron Technology, Inc. | Vector population count determination in memory |
| US10049054B2 (en) | 2015-04-01 | 2018-08-14 | Micron Technology, Inc. | Virtual register file |
| US10140104B2 (en) | 2015-04-14 | 2018-11-27 | Micron Technology, Inc. | Target architecture determination |
| US9959923B2 (en) | 2015-04-16 | 2018-05-01 | Micron Technology, Inc. | Apparatuses and methods to reverse data stored in memory |
| US10073786B2 (en) | 2015-05-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for compute enabled cache |
| US9704541B2 (en) | 2015-06-12 | 2017-07-11 | Micron Technology, Inc. | Simulating access lines |
| US9921777B2 (en) | 2015-06-22 | 2018-03-20 | Micron Technology, Inc. | Apparatuses and methods for data transfer from sensing circuitry to a controller |
| US9996479B2 (en) | 2015-08-17 | 2018-06-12 | Micron Technology, Inc. | Encryption of executables in computational memory |
| US9905276B2 (en) | 2015-12-21 | 2018-02-27 | Micron Technology, Inc. | Control of sensing components in association with performing operations |
| US9952925B2 (en) | 2016-01-06 | 2018-04-24 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
| US10048888B2 (en) | 2016-02-10 | 2018-08-14 | Micron Technology, Inc. | Apparatuses and methods for partitioned parallel data movement |
| US9892767B2 (en) | 2016-02-12 | 2018-02-13 | Micron Technology, Inc. | Data gathering in memory |
| US9971541B2 (en) | 2016-02-17 | 2018-05-15 | Micron Technology, Inc. | Apparatuses and methods for data movement |
| US9899070B2 (en) | 2016-02-19 | 2018-02-20 | Micron Technology, Inc. | Modified decode for corner turn |
| US10956439B2 (en) | 2016-02-19 | 2021-03-23 | Micron Technology, Inc. | Data transfer with a bit vector operation device |
| US9697876B1 (en) | 2016-03-01 | 2017-07-04 | Micron Technology, Inc. | Vertical bit vector shift in memory |
| US9997232B2 (en) | 2016-03-10 | 2018-06-12 | Micron Technology, Inc. | Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations |
| US10262721B2 (en) | 2016-03-10 | 2019-04-16 | Micron Technology, Inc. | Apparatuses and methods for cache invalidate |
| US10379772B2 (en) | 2016-03-16 | 2019-08-13 | Micron Technology, Inc. | Apparatuses and methods for operations using compressed and decompressed data |
| US9910637B2 (en) | 2016-03-17 | 2018-03-06 | Micron Technology, Inc. | Signed division in memory |
| US10120740B2 (en) | 2016-03-22 | 2018-11-06 | Micron Technology, Inc. | Apparatus and methods for debugging on a memory device |
| US10388393B2 (en) | 2016-03-22 | 2019-08-20 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
| US11074988B2 (en) | 2016-03-22 | 2021-07-27 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
| US10977033B2 (en) | 2016-03-25 | 2021-04-13 | Micron Technology, Inc. | Mask patterns generated in memory from seed vectors |
| US10474581B2 (en) | 2016-03-25 | 2019-11-12 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
| US10074416B2 (en) | 2016-03-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for data movement |
| US10430244B2 (en) | 2016-03-28 | 2019-10-01 | Micron Technology, Inc. | Apparatuses and methods to determine timing of operations |
| US10453502B2 (en) | 2016-04-04 | 2019-10-22 | Micron Technology, Inc. | Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions |
| US10607665B2 (en) | 2016-04-07 | 2020-03-31 | Micron Technology, Inc. | Span mask generation |
| US9818459B2 (en) | 2016-04-19 | 2017-11-14 | Micron Technology, Inc. | Invert operations using sensing circuitry |
| US9659605B1 (en) | 2016-04-20 | 2017-05-23 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
| US10153008B2 (en) | 2016-04-20 | 2018-12-11 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
| US10042608B2 (en) | 2016-05-11 | 2018-08-07 | Micron Technology, Inc. | Signed division in memory |
| US9659610B1 (en) | 2016-05-18 | 2017-05-23 | Micron Technology, Inc. | Apparatuses and methods for shifting data |
| US10049707B2 (en) | 2016-06-03 | 2018-08-14 | Micron Technology, Inc. | Shifting data |
| US10387046B2 (en) | 2016-06-22 | 2019-08-20 | Micron Technology, Inc. | Bank to bank data transfer |
| US10037785B2 (en) | 2016-07-08 | 2018-07-31 | Micron Technology, Inc. | Scan chain operation in sensing circuitry |
| US10388360B2 (en) | 2016-07-19 | 2019-08-20 | Micron Technology, Inc. | Utilization of data stored in an edge section of an array |
| US10733089B2 (en) | 2016-07-20 | 2020-08-04 | Micron Technology, Inc. | Apparatuses and methods for write address tracking |
| US10387299B2 (en) | 2016-07-20 | 2019-08-20 | Micron Technology, Inc. | Apparatuses and methods for transferring data |
| US9767864B1 (en) | 2016-07-21 | 2017-09-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
| US9972367B2 (en) | 2016-07-21 | 2018-05-15 | Micron Technology, Inc. | Shifting data in sensing circuitry |
| US10303632B2 (en) | 2016-07-26 | 2019-05-28 | Micron Technology, Inc. | Accessing status information |
| US10468087B2 (en) | 2016-07-28 | 2019-11-05 | Micron Technology, Inc. | Apparatuses and methods for operations in a self-refresh state |
| US9990181B2 (en) | 2016-08-03 | 2018-06-05 | Micron Technology, Inc. | Apparatuses and methods for random number generation |
| US11029951B2 (en) | 2016-08-15 | 2021-06-08 | Micron Technology, Inc. | Smallest or largest value element determination |
| US10606587B2 (en) | 2016-08-24 | 2020-03-31 | Micron Technology, Inc. | Apparatus and methods related to microcode instructions indicating instruction types |
| KR20180130581A (ko) | 2016-08-31 | 2018-12-07 | 마이크론 테크놀로지, 인크 | 메모리 셀 및 메모리 어레이 |
| CN109155310B (zh) | 2016-08-31 | 2023-03-31 | 美光科技公司 | 存储器单元及存储器阵列 |
| KR102195321B1 (ko) | 2016-08-31 | 2020-12-24 | 마이크론 테크놀로지, 인크 | 감지 증폭기 구성물 |
| EP3507830A4 (en) | 2016-08-31 | 2020-04-01 | Micron Technology, Inc. | MEMORY CELLS AND MEMORY MATRICES |
| US10355002B2 (en) | 2016-08-31 | 2019-07-16 | Micron Technology, Inc. | Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry |
| KR102134532B1 (ko) | 2016-08-31 | 2020-07-20 | 마이크론 테크놀로지, 인크 | 메모리 셀들 및 메모리 어레이들 |
| CN109155145B (zh) | 2016-08-31 | 2022-11-01 | 美光科技公司 | 存储器阵列 |
| US10466928B2 (en) | 2016-09-15 | 2019-11-05 | Micron Technology, Inc. | Updating a register in memory |
| US10387058B2 (en) | 2016-09-29 | 2019-08-20 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
| US10014034B2 (en) | 2016-10-06 | 2018-07-03 | Micron Technology, Inc. | Shifting data in sensing circuitry |
| US10529409B2 (en) | 2016-10-13 | 2020-01-07 | Micron Technology, Inc. | Apparatuses and methods to perform logical operations using sensing circuitry |
| US9805772B1 (en) | 2016-10-20 | 2017-10-31 | Micron Technology, Inc. | Apparatuses and methods to selectively perform logical operations |
| CN207637499U (zh) | 2016-11-08 | 2018-07-20 | 美光科技公司 | 用于形成在存储器单元阵列上方的计算组件的设备 |
| US10423353B2 (en) | 2016-11-11 | 2019-09-24 | Micron Technology, Inc. | Apparatuses and methods for memory alignment |
| US9761300B1 (en) | 2016-11-22 | 2017-09-12 | Micron Technology, Inc. | Data shift apparatuses and methods |
| WO2018132250A1 (en) | 2017-01-12 | 2018-07-19 | Micron Technology, Inc. | Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry |
| US10402340B2 (en) | 2017-02-21 | 2019-09-03 | Micron Technology, Inc. | Memory array page table walk |
| US10268389B2 (en) | 2017-02-22 | 2019-04-23 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
| US10403352B2 (en) | 2017-02-22 | 2019-09-03 | Micron Technology, Inc. | Apparatuses and methods for compute in data path |
| US10838899B2 (en) | 2017-03-21 | 2020-11-17 | Micron Technology, Inc. | Apparatuses and methods for in-memory data switching networks |
| US10185674B2 (en) | 2017-03-22 | 2019-01-22 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
| US11222260B2 (en) | 2017-03-22 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for operating neural networks |
| US10049721B1 (en) | 2017-03-27 | 2018-08-14 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
| US10147467B2 (en) | 2017-04-17 | 2018-12-04 | Micron Technology, Inc. | Element value comparison in memory |
| US10043570B1 (en) | 2017-04-17 | 2018-08-07 | Micron Technology, Inc. | Signed element compare in memory |
| US9997212B1 (en) | 2017-04-24 | 2018-06-12 | Micron Technology, Inc. | Accessing data in memory |
| US10942843B2 (en) | 2017-04-25 | 2021-03-09 | Micron Technology, Inc. | Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes |
| US10236038B2 (en) | 2017-05-15 | 2019-03-19 | Micron Technology, Inc. | Bank to bank data transfer |
| US10068664B1 (en) | 2017-05-19 | 2018-09-04 | Micron Technology, Inc. | Column repair in memory |
| US10013197B1 (en) | 2017-06-01 | 2018-07-03 | Micron Technology, Inc. | Shift skip |
| US10262701B2 (en) | 2017-06-07 | 2019-04-16 | Micron Technology, Inc. | Data transfer between subarrays in memory |
| US10152271B1 (en) | 2017-06-07 | 2018-12-11 | Micron Technology, Inc. | Data replication |
| US10318168B2 (en) | 2017-06-19 | 2019-06-11 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
| US10162005B1 (en) | 2017-08-09 | 2018-12-25 | Micron Technology, Inc. | Scan chain operations |
| EP3676835A4 (en) * | 2017-08-29 | 2020-08-19 | Micron Technology, Inc. | MEMORY CIRCUITS |
| US10534553B2 (en) | 2017-08-30 | 2020-01-14 | Micron Technology, Inc. | Memory array accessibility |
| US10416927B2 (en) | 2017-08-31 | 2019-09-17 | Micron Technology, Inc. | Processing in memory |
| US10741239B2 (en) | 2017-08-31 | 2020-08-11 | Micron Technology, Inc. | Processing in memory device including a row address strobe manager |
| US10346092B2 (en) | 2017-08-31 | 2019-07-09 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations using timing circuitry |
| US10409739B2 (en) | 2017-10-24 | 2019-09-10 | Micron Technology, Inc. | Command selection policy |
| US10522210B2 (en) | 2017-12-14 | 2019-12-31 | Micron Technology, Inc. | Apparatuses and methods for subarray addressing |
| US10332586B1 (en) | 2017-12-19 | 2019-06-25 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
| US10614875B2 (en) | 2018-01-30 | 2020-04-07 | Micron Technology, Inc. | Logical operations using memory cells |
| US11194477B2 (en) | 2018-01-31 | 2021-12-07 | Micron Technology, Inc. | Determination of a match between data values stored by three or more arrays |
| US10437557B2 (en) | 2018-01-31 | 2019-10-08 | Micron Technology, Inc. | Determination of a match between data values stored by several arrays |
| US10725696B2 (en) | 2018-04-12 | 2020-07-28 | Micron Technology, Inc. | Command selection policy with read priority |
| US10440341B1 (en) | 2018-06-07 | 2019-10-08 | Micron Technology, Inc. | Image processor formed in an array of memory cells |
| US11175915B2 (en) | 2018-10-10 | 2021-11-16 | Micron Technology, Inc. | Vector registers implemented in memory |
| US10769071B2 (en) | 2018-10-10 | 2020-09-08 | Micron Technology, Inc. | Coherent memory access |
| US10483978B1 (en) | 2018-10-16 | 2019-11-19 | Micron Technology, Inc. | Memory device processing |
| US11184446B2 (en) | 2018-12-05 | 2021-11-23 | Micron Technology, Inc. | Methods and apparatus for incentivizing participation in fog networks |
| US12118056B2 (en) | 2019-05-03 | 2024-10-15 | Micron Technology, Inc. | Methods and apparatus for performing matrix transformations within a memory array |
| US10867655B1 (en) | 2019-07-08 | 2020-12-15 | Micron Technology, Inc. | Methods and apparatus for dynamically adjusting performance of partitioned memory |
| US11360768B2 (en) | 2019-08-14 | 2022-06-14 | Micron Technolgy, Inc. | Bit string operations in memory |
| US11449577B2 (en) | 2019-11-20 | 2022-09-20 | Micron Technology, Inc. | Methods and apparatus for performing video processing matrix operations within a memory array |
| US11853385B2 (en) | 2019-12-05 | 2023-12-26 | Micron Technology, Inc. | Methods and apparatus for performing diversity matrix operations within a memory array |
| US11227641B1 (en) | 2020-07-21 | 2022-01-18 | Micron Technology, Inc. | Arithmetic operations in memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05159564A (ja) * | 1991-12-04 | 1993-06-25 | Toshiba Corp | ダイナミック型半導体記憶装置 |
| JPH07161183A (ja) * | 1993-12-07 | 1995-06-23 | Hitachi Ltd | 半導体記憶装置 |
| JPH0896571A (ja) * | 1994-09-22 | 1996-04-12 | Toshiba Microelectron Corp | ダイナミック型メモリ |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3686640A (en) * | 1970-06-25 | 1972-08-22 | Cogar Corp | Variable organization memory system |
| JPS573289A (en) * | 1980-06-04 | 1982-01-08 | Hitachi Ltd | Semiconductor storing circuit device |
| US4739497A (en) * | 1981-05-29 | 1988-04-19 | Hitachi, Ltd. | Semiconductor memory |
| US4611299A (en) * | 1982-02-22 | 1986-09-09 | Hitachi, Ltd. | Monolithic storage device |
| JPS58147884A (ja) * | 1982-02-26 | 1983-09-02 | Toshiba Corp | ダイナミック型半導体記憶装置 |
| JPS60115099A (ja) * | 1983-11-25 | 1985-06-21 | Fujitsu Ltd | 半導体記憶装置 |
| US4618947B1 (en) * | 1984-07-26 | 1998-01-06 | Texas Instruments Inc | Dynamic memory with improved address counter for serial modes |
| NL8600099A (nl) * | 1986-01-20 | 1987-08-17 | Philips Nv | Niet-vluchtig, programmeerbaar halfgeleidergeheugen. |
| JPS62192086A (ja) * | 1986-02-18 | 1987-08-22 | Matsushita Electronics Corp | 半導体記憶装置 |
| JP2714944B2 (ja) * | 1987-08-05 | 1998-02-16 | 三菱電機株式会社 | 半導体記憶装置 |
| US4807191A (en) * | 1988-01-04 | 1989-02-21 | Motorola, Inc. | Redundancy for a block-architecture memory |
| JP2547615B2 (ja) * | 1988-06-16 | 1996-10-23 | 三菱電機株式会社 | 読出専用半導体記憶装置および半導体記憶装置 |
| US5042011A (en) * | 1989-05-22 | 1991-08-20 | Micron Technology, Inc. | Sense amplifier pulldown device with tailored edge input |
| JPH0778994B2 (ja) * | 1989-10-11 | 1995-08-23 | 三菱電機株式会社 | 半導体記憶装置 |
| US5291045A (en) * | 1991-03-29 | 1994-03-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device using a differential cell in a memory cell |
| US5625602A (en) * | 1991-11-18 | 1997-04-29 | Kabushiki Kaisha Toshiba | NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines |
| US5280205A (en) * | 1992-04-16 | 1994-01-18 | Micron Technology, Inc. | Fast sense amplifier |
| US5280447A (en) * | 1992-06-19 | 1994-01-18 | Intel Corporation | Floating gate nonvolatile memory with configurable erasure blocks |
| US5305281A (en) * | 1992-08-06 | 1994-04-19 | National Semiconductor Corporation | Multiple array memory device with staggered read/write for high speed data access |
| US5402379A (en) * | 1993-08-31 | 1995-03-28 | Sgs-Thomson Microelectronics, Inc. | Precharge device for an integrated circuit internal bus |
| US5506810A (en) * | 1994-08-16 | 1996-04-09 | Cirrus Logic, Inc. | Dual bank memory and systems using the same |
| US5544113A (en) * | 1994-11-30 | 1996-08-06 | International Business Machines Corporation | Random access memory having a flexible array redundancy scheme |
| KR0144901B1 (ko) * | 1995-04-24 | 1998-08-17 | 김광호 | 트리플 포트 반도체 메모리장치 |
| JP3607407B2 (ja) * | 1995-04-26 | 2005-01-05 | 株式会社日立製作所 | 半導体記憶装置 |
| US5654932A (en) * | 1995-10-04 | 1997-08-05 | Cirrus Logic, Inc. | Memory devices with selectable access type and methods using the same |
| US5617555A (en) * | 1995-11-30 | 1997-04-01 | Alliance Semiconductor Corporation | Burst random access memory employing sequenced banks of local tri-state drivers |
| US5703810A (en) * | 1995-12-15 | 1997-12-30 | Silicon Graphics, Inc. | DRAM for texture mapping |
| KR0172426B1 (ko) * | 1995-12-21 | 1999-03-30 | 김광호 | 반도체 메모리장치 |
| US5608668A (en) * | 1995-12-22 | 1997-03-04 | Micron Technology, Inc. | Dram wtih open digit lines and array edge reference sensing |
| AU1752297A (en) * | 1996-01-24 | 1997-08-20 | Cypress Semiconductor Corp. | Interdigitated memory array |
| JPH09231740A (ja) * | 1996-02-21 | 1997-09-05 | Nec Corp | 半導体記憶装置 |
| US5627785A (en) * | 1996-03-15 | 1997-05-06 | Micron Technology, Inc. | Memory device with a sense amplifier |
| US5717629A (en) * | 1996-10-24 | 1998-02-10 | Yin; Ronald Loh-Hwa | Memory circuit and method of operation therefor |
| JPH1186541A (ja) * | 1997-09-02 | 1999-03-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1998
- 1998-08-21 US US09/137,526 patent/US6141286A/en not_active Expired - Lifetime
-
1999
- 1999-08-18 JP JP2000566853A patent/JP2004500673A/ja active Pending
- 1999-08-18 KR KR1020017002200A patent/KR100676864B1/ko not_active Expired - Fee Related
- 1999-08-18 WO PCT/US1999/018765 patent/WO2000011676A1/en not_active Ceased
- 1999-10-26 TW TW088114238A patent/TW507213B/zh not_active IP Right Cessation
-
2000
- 2000-01-14 US US09/482,912 patent/US6166942A/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05159564A (ja) * | 1991-12-04 | 1993-06-25 | Toshiba Corp | ダイナミック型半導体記憶装置 |
| JPH07161183A (ja) * | 1993-12-07 | 1995-06-23 | Hitachi Ltd | 半導体記憶装置 |
| JPH0896571A (ja) * | 1994-09-22 | 1996-04-12 | Toshiba Microelectron Corp | ダイナミック型メモリ |
Also Published As
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|---|---|
| TW507213B (en) | 2002-10-21 |
| KR20010072823A (ko) | 2001-07-31 |
| US6166942A (en) | 2000-12-26 |
| KR100676864B1 (ko) | 2007-02-05 |
| US6141286A (en) | 2000-10-31 |
| WO2000011676A1 (en) | 2000-03-02 |
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