JP2004308007A5 - - Google Patents

Download PDF

Info

Publication number
JP2004308007A5
JP2004308007A5 JP2004099110A JP2004099110A JP2004308007A5 JP 2004308007 A5 JP2004308007 A5 JP 2004308007A5 JP 2004099110 A JP2004099110 A JP 2004099110A JP 2004099110 A JP2004099110 A JP 2004099110A JP 2004308007 A5 JP2004308007 A5 JP 2004308007A5
Authority
JP
Japan
Prior art keywords
alkyl
independently selected
alkynyl
alkenyl
aryl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004099110A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004308007A (ja
JP4954448B2 (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2004308007A publication Critical patent/JP2004308007A/ja
Publication of JP2004308007A5 publication Critical patent/JP2004308007A5/ja
Application granted granted Critical
Publication of JP4954448B2 publication Critical patent/JP4954448B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004099110A 2003-04-05 2004-03-30 有機金属化合物 Expired - Fee Related JP4954448B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US46079103P 2003-04-05 2003-04-05
US60/460791 2003-04-05
US51347603P 2003-10-22 2003-10-22
US60/513476 2003-10-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010158413A Division JP5460501B2 (ja) 2003-04-05 2010-07-13 有機金属化合物

Publications (3)

Publication Number Publication Date
JP2004308007A JP2004308007A (ja) 2004-11-04
JP2004308007A5 true JP2004308007A5 (OSRAM) 2007-04-26
JP4954448B2 JP4954448B2 (ja) 2012-06-13

Family

ID=32853627

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004099110A Expired - Fee Related JP4954448B2 (ja) 2003-04-05 2004-03-30 有機金属化合物
JP2010158413A Expired - Fee Related JP5460501B2 (ja) 2003-04-05 2010-07-13 有機金属化合物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010158413A Expired - Fee Related JP5460501B2 (ja) 2003-04-05 2010-07-13 有機金属化合物

Country Status (8)

Country Link
US (2) US7413776B2 (OSRAM)
EP (2) EP1464724B1 (OSRAM)
JP (2) JP4954448B2 (OSRAM)
KR (2) KR101200524B1 (OSRAM)
CN (1) CN100516289C (OSRAM)
DE (2) DE602004018219D1 (OSRAM)
SG (1) SG126757A1 (OSRAM)
TW (1) TWI318222B (OSRAM)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
KR20080101893A (ko) * 2006-02-08 2008-11-21 제이에스알 가부시끼가이샤 금속막의 형성 방법
JP4957037B2 (ja) * 2006-03-24 2012-06-20 東ソー株式会社 有機シラン化合物、それを含むＳｉ含有膜形成材料、製造方法および用途
GB2452224B (en) 2006-06-20 2011-02-23 Inst Energiteknik The use of biphenyl, terphenyl, and fluorene sulphonic acid based tracers for monitoring streams of fluids
US8318966B2 (en) * 2006-06-23 2012-11-27 Praxair Technology, Inc. Organometallic compounds
KR100757415B1 (ko) 2006-07-13 2007-09-10 삼성전자주식회사 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
CN101678665B (zh) * 2007-04-02 2013-07-10 代表亚利桑那州立大学行事的亚利桑那董事会 制备和使用卤代甲硅烷基锗烷的新方法
US20080312356A1 (en) * 2007-06-13 2008-12-18 Applied Mcrostructures, Inc. Vapor-deposited biocompatible coatings which adhere to various plastics and metal
KR20100084157A (ko) 2007-09-17 2010-07-23 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Ｇｓｔ 필름 증착용 텔루륨 전구체
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
KR100960355B1 (ko) * 2008-03-05 2010-05-28 한화케미칼 주식회사 수소 저장 물질로서 유기-전이 금속 하이드라이드의 개선된제조 방법
CN102046838A (zh) 2008-05-29 2011-05-04 乔治洛德方法研究和开发液化空气有限公司 用于膜沉积的碲前体
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
KR100984718B1 (ko) * 2008-08-11 2010-10-01 한화케미칼 주식회사 수소 저장물질로써 아릴 또는 알킬을 포함하는 유기-전이 금속 하이드라이드의 보다 개선된 제조방법
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
JP2011054935A (ja) * 2009-06-19 2011-03-17 Rohm & Haas Electronic Materials Llc ドーピング方法
JP2011009479A (ja) * 2009-06-26 2011-01-13 Gas-Phase Growth Ltd 膜形成材料、膜形成方法、及び素子
KR101805211B1 (ko) 2009-09-02 2017-12-05 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 게르마늄 함유 막 침착을 위한 디할라이드 게르마늄(ⅱ) 전구체
WO2011095849A1 (en) 2010-02-03 2011-08-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
US20120277457A1 (en) * 2010-10-12 2012-11-01 Air Products And Chemicals, Inc. Aminosilanes and methods for making same
CN107675250B (zh) * 2011-03-28 2020-08-07 应用材料公司 选择性沉积外延锗合金应力源的方法与设备
JP5785325B2 (ja) * 2011-06-03 2015-09-30 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 炭素ドープケイ素含有膜を堆積するための組成物及び方法
JP6007662B2 (ja) 2011-09-05 2016-10-12 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP2012142586A (ja) * 2012-02-20 2012-07-26 Gas-Phase Growth Ltd 膜形成材料および膜形成方法
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
WO2013151623A2 (en) * 2012-04-05 2013-10-10 Dow Corning Corporation A method for preparing an organofunctional compound
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US9920077B2 (en) * 2013-09-27 2018-03-20 L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof
KR101720017B1 (ko) * 2014-01-08 2017-03-27 (주)디엔에프 신규한 트리실릴아민 유도체, 이의 제조방법 및 이를 이용한 실리콘 함유 박막
KR101659610B1 (ko) * 2014-03-18 2016-09-23 주식회사 유진테크 머티리얼즈 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법
US10464953B2 (en) * 2016-10-14 2019-11-05 Versum Materials Us, Llc Carbon bridged aminosilane compounds for high growth rate silicon-containing films
EP3413334B1 (de) * 2017-06-01 2020-09-09 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
KR102364476B1 (ko) * 2020-05-08 2022-02-18 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
WO2022020705A1 (en) * 2020-07-24 2022-01-27 Versum Materials Us, Llc Compositions and methods using same for germanium seed layer
EP4398885A1 (en) * 2021-09-10 2024-07-17 Regents of the University of Michigan Gas-assisted cocrystal de-sublimation
JP2025526829A (ja) 2022-08-12 2025-08-15 ジェレスト， インコーポレイテッド 不飽和置換基を含有する高純度スズ化合物及びそれを調製する方法
KR20250073631A (ko) 2022-10-04 2025-05-27 젤리스트 인코퍼레이티드 고리형 아자스탄난 및 고리형 옥소스탄난 화합물과 이의 제조 방법
TW202530237A (zh) 2023-09-13 2025-08-01 德商馬克專利公司 具有改良熱及光穩定性之分子內穩定化單烷基金屬化合物及其用途

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US549108A (en) * 1895-11-05 Machine for manufacturing lacing-studs
US111013A (en) * 1871-01-17 Improvement in machines for making spikes
US82300A (en) * 1868-09-22 Improved oak-spring
US2444270A (en) * 1946-04-16 1948-06-29 Gen Electric Method of preparing organogermanium halides
GB626398A (en) 1946-04-16 1949-07-14 British Thomson Houston Co Ltd Improvements in and relating to methods of preparing organogermanium halides
US3442921A (en) * 1964-10-21 1969-05-06 Monsanto Co Process for the preparation of tetraorgano germanes
US3470220A (en) * 1965-08-19 1969-09-30 Monsanto Co Germanium and tin compounds
US3446824A (en) * 1965-12-10 1969-05-27 Monsanto Co Direct process for the preparation of organogermanium halides
US3935040A (en) 1971-10-20 1976-01-27 Harris Corporation Process for forming monolithic semiconductor display
DE2212295C3 (de) 1972-03-14 1975-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten
US3985590A (en) 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US4506815A (en) 1982-12-09 1985-03-26 Thiokol Corporation Bubbler cylinder and dip tube device
DE3567871D1 (en) 1984-03-26 1989-03-02 Secr Defence Brit The preparation of metal alkyls
EP0216887B1 (en) 1985-04-09 1991-07-10 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Preparation of group ii metal alkyls
JPS61281869A (ja) * 1985-06-07 1986-12-12 Canon Inc 堆積膜形成法
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPH084070B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 薄膜半導体素子及びその形成法
US4681640A (en) * 1986-08-06 1987-07-21 The United States Of America As Represented By The Secretary Of The Army Laser-induced chemical vapor deposition of germanium and doped-germanium films
US4877651A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
JPH02225399A (ja) 1988-11-11 1990-09-07 Fujitsu Ltd エピタキシャル成長方法および成長装置
JPH02208925A (ja) * 1989-02-09 1990-08-20 Nippon Telegr & Teleph Corp <Ntt> 半導体膜の形成方法
DE69027496T2 (de) 1989-09-26 1996-10-31 Canon Kk Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage
US5316958A (en) 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
JPH04151839A (ja) * 1990-10-16 1992-05-25 Kawasaki Steel Corp シリコンオキシナイトライド膜の製造方法
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5344948A (en) * 1992-02-25 1994-09-06 Iowa State University Research Foundation, Inc. Single-source molecular organic chemical vapor deposition agents and use
JPH05259089A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 半導体結晶の製造方法
US5459108A (en) * 1992-10-06 1995-10-17 Sharp Kabushiki Kaisha Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone
JP2684942B2 (ja) * 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
US5502227A (en) 1993-07-27 1996-03-26 Cvd, Incorporated Liquid indium source
FR2722781A1 (fr) * 1994-07-20 1996-01-26 Inst National Polytech Inpt Procede pour realiser la synthese d'un ou de composes organiques ou organometalliques et applications notamment aux reactions d'aclation, reactions de redistribution et reactions pericycliques
US5489550A (en) 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive
US5924012A (en) 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US5874368A (en) * 1997-10-02 1999-02-23 Air Products And Chemicals, Inc. Silicon nitride from bis(tertiarybutylamino)silane
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6159855A (en) * 1998-04-28 2000-12-12 Micron Technology, Inc. Organometallic compound mixtures in chemical vapor deposition
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
US6365231B2 (en) * 1998-06-26 2002-04-02 Kabushiki Kaisha Toshiba Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
US6214729B1 (en) 1998-09-01 2001-04-10 Micron Technology, Inc. Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
JP3379100B2 (ja) * 1998-09-04 2003-02-17 日本電気株式会社 シングルダマシン構造の埋め込み配線及びその形成方法
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6099903A (en) 1999-05-19 2000-08-08 Research Foundation Of State University Of New York MOCVD processes using precursors based on organometalloid ligands
US6184403B1 (en) * 1999-05-19 2001-02-06 Research Foundation Of State University Of New York MOCVD precursors based on organometalloid ligands
US6153261A (en) * 1999-05-28 2000-11-28 Applied Materials, Inc. Dielectric film deposition employing a bistertiarybutylaminesilane precursor
DE60042045D1 (de) 1999-06-22 2009-06-04 Panasonic Corp Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren
US6238734B1 (en) 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6444038B1 (en) 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
US7041170B2 (en) 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
JP2002128787A (ja) * 1999-12-15 2002-05-09 Mitsubishi Materials Corp 有機銅化合物及び該化合物を含む混合液並びにそれを用いて作製された銅薄膜
US6589329B1 (en) * 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6642401B2 (en) * 2000-03-14 2003-11-04 Nissan Chemical Industries, Ltd. β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same
EP1160355B1 (en) 2000-05-31 2004-10-27 Shipley Company LLC Bubbler
US6514886B1 (en) 2000-09-22 2003-02-04 Newport Fab, Llc Method for elimination of contaminants prior to epitaxy
JP5290488B2 (ja) * 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ 酸化物、ケイ酸塩及びリン酸塩の気相成長
JP3998408B2 (ja) 2000-09-29 2007-10-24 株式会社東芝 半導体装置及びその製造方法
US6500772B2 (en) * 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020127883A1 (en) * 2001-01-09 2002-09-12 Conti Richard A. Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
JP4866534B2 (ja) 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
AU2002950405A0 (en) 2002-07-26 2002-09-12 Chirogen Pty Limited Chemical methods
JP5288707B2 (ja) 2003-03-12 2013-09-11 エーエスエム アメリカ インコーポレイテッド シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys

Similar Documents

Publication Publication Date Title
JP2004308007A5 (OSRAM)
JP2004349684A5 (ja) ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP2002501075A5 (OSRAM)
JP6904924B2 (ja) 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法
JP2010235633A5 (OSRAM)
JP3409290B2 (ja) ゲート酸化膜形成材料
US20120323008A1 (en) Group 11 mono-metallic precursor compounds and use thereof in metal deposition
JP5815599B2 (ja) 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法
JP6588480B2 (ja) 有機アミノシラン前駆体およびこれを含む膜の堆積方法
CN103582719B (zh) 用于沉积碳掺杂含硅膜的组合物和方法
KR101847953B1 (ko) 몰리브덴(ｉｖ) 아미드 전구체 및 원자층 증착용으로서의 그것의 용도
CN102295657A (zh) 有机氨基硅烷前体及沉积包含该前体的薄膜的方法
US20130078392A1 (en) Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP2017515885A5 (OSRAM)
JP2004527651A5 (OSRAM)
JP2006516031A5 (OSRAM)
JP2024546753A (ja) ケイ素含有反応物により支援された低温モリブデン堆積
CN1361784A (zh) 铜源试剂组合物,及其制造和用于微电子设备结构的方法
JP4693970B2 (ja) ゲート酸化膜形成方法
CN105377860A (zh) 新氨基-甲硅烷基胺化合物、制备其的方法和使用其的含硅薄膜
TWI273643B (en) Solid organometallic compound-filled container and filling method thereof
TWI273144B (en) Container for loading solid organic metal compound and method for loading the same
JP2005511895A5 (OSRAM)
US20100286423A1 (en) Nickel-containing film-forming material and process for producing nickel-containing film
JP4463403B2 (ja) ゲート酸化膜形成材料およびゲート酸化膜形成方法