JP2004199073A5 - - Google Patents

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Publication number
JP2004199073A5
JP2004199073A5 JP2003419662A JP2003419662A JP2004199073A5 JP 2004199073 A5 JP2004199073 A5 JP 2004199073A5 JP 2003419662 A JP2003419662 A JP 2003419662A JP 2003419662 A JP2003419662 A JP 2003419662A JP 2004199073 A5 JP2004199073 A5 JP 2004199073A5
Authority
JP
Japan
Prior art keywords
mol
monomer units
radiation sensitive
sensitive resist
hydroxyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003419662A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004199073A (ja
Filing date
Publication date
Priority claimed from US09/268,430 external-priority patent/US6323287B1/en
Application filed filed Critical
Publication of JP2004199073A publication Critical patent/JP2004199073A/ja
Publication of JP2004199073A5 publication Critical patent/JP2004199073A5/ja
Pending legal-status Critical Current

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JP2003419662A 1999-03-12 2003-12-17 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り Pending JP2004199073A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/268,430 US6323287B1 (en) 1999-03-12 1999-03-12 Hydroxy-amino thermally cured undercoat for 193 NM lithography

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000604269A Division JP3778485B2 (ja) 1999-03-12 2000-03-10 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り

Publications (2)

Publication Number Publication Date
JP2004199073A JP2004199073A (ja) 2004-07-15
JP2004199073A5 true JP2004199073A5 (enExample) 2006-06-15

Family

ID=23022973

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2000604269A Expired - Fee Related JP3778485B2 (ja) 1999-03-12 2000-03-10 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り
JP2003419661A Expired - Fee Related JP4308639B2 (ja) 1999-03-12 2003-12-17 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り
JP2003419662A Pending JP2004199073A (ja) 1999-03-12 2003-12-17 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2000604269A Expired - Fee Related JP3778485B2 (ja) 1999-03-12 2000-03-10 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り
JP2003419661A Expired - Fee Related JP4308639B2 (ja) 1999-03-12 2003-12-17 １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り

Country Status (8)

Country Link
US (3) US6323287B1 (enExample)
EP (3) EP1634917A1 (enExample)
JP (3) JP3778485B2 (enExample)
KR (1) KR100706565B1 (enExample)
AT (2) ATE421551T1 (enExample)
DE (2) DE60035030T2 (enExample)
TW (1) TWI294990B (enExample)
WO (1) WO2000054105A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000227665A (ja) * 1998-11-02 2000-08-15 Kansai Paint Co Ltd パターン形成方法
US6610808B2 (en) * 1999-03-12 2003-08-26 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6924339B2 (en) * 1999-03-12 2005-08-02 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
JP4253423B2 (ja) * 2000-06-14 2009-04-15 富士フイルム株式会社 ポジ型レジスト積層物
TW556047B (en) * 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
EP1373331A4 (en) * 2001-03-13 2007-01-17 Fujifilm Electronic Materials THERMALLY HARDENED LITHOGRAPH LAYER
KR20030076225A (ko) 2001-04-04 2003-09-26 아치 스페셜티 케미칼즈, 인코포레이티드 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물
JP4139575B2 (ja) 2001-04-13 2008-08-27 富士フイルム株式会社 シリコン含有２層レジスト用下層レジスト組成物
US6605394B2 (en) * 2001-05-03 2003-08-12 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
US6703169B2 (en) 2001-07-23 2004-03-09 Applied Materials, Inc. Method of preparing optically imaged high performance photomasks
US20030064321A1 (en) * 2001-08-31 2003-04-03 Arch Specialty Chemicals, Inc. Free-acid containing polymers and their use in photoresists
JP2003112321A (ja) * 2001-10-02 2003-04-15 Sony Corp 加工用マスター基材及び同マスター基材の製造方法
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
DE10204114A1 (de) * 2002-02-01 2003-08-14 Basf Coatings Ag Thermisch und mit aktinischer Strahlung härtbares Stoffgemisch, Verfahren zu seiner Herstellung und seine Verwendung
US6894104B2 (en) * 2002-05-23 2005-05-17 Brewer Science Inc. Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
KR100636663B1 (ko) * 2002-06-24 2006-10-23 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
KR100480235B1 (ko) * 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
US7137076B2 (en) * 2002-07-30 2006-11-14 Microsoft Corporation Correcting recognition results associated with user input
US7011935B2 (en) * 2002-09-19 2006-03-14 Arch Specialty Chemicals, Inc. Method for the removal of an imaging layer from a semiconductor substrate stack
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
KR100832247B1 (ko) * 2002-11-27 2008-05-28 주식회사 동진쎄미켐 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR20070029157A (ko) * 2004-03-12 2007-03-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 리소그래피 적용을 위한 열경화된 언더코트
US20050215713A1 (en) * 2004-03-26 2005-09-29 Hessell Edward T Method of producing a crosslinked coating in the manufacture of integrated circuits
WO2006080786A1 (en) * 2005-01-25 2006-08-03 Lg Chem. Ltd. Thermally curable resin composition with extended storage stability and good adhesive property
US20060166173A1 (en) * 2005-01-27 2006-07-27 Ellis Michael B Educational method and device
JP4993119B2 (ja) * 2005-04-19 2012-08-08 日産化学工業株式会社 光架橋硬化のレジスト下層膜を形成するためのレジスト下層膜形成組成物
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100652425B1 (ko) * 2005-08-12 2006-12-01 삼성전자주식회사 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100151392A1 (en) * 2008-12-11 2010-06-17 Rahman M Dalil Antireflective coating compositions
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8486609B2 (en) * 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
JP6065497B2 (ja) * 2011-09-29 2017-01-25 Jsr株式会社 パターン形成方法及びポリシロキサン組成物
US10175845B2 (en) * 2013-10-16 2019-01-08 3M Innovative Properties Company Organizing digital notes on a user interface
WO2016013344A1 (ja) * 2014-07-24 2016-01-28 日産化学工業株式会社 カラーフィルター下層膜形成用樹脂組成物
WO2016035785A1 (ja) 2014-09-02 2016-03-10 学校法人東京理科大学 導電膜および導電パターンの製造方法
JP6659290B2 (ja) 2015-09-30 2020-03-04 株式会社日立ハイテクサイエンス 試料位置合わせ方法および荷電粒子ビーム装置
US9857684B2 (en) * 2016-03-17 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon-containing photoresist for lithography
US20200173120A1 (en) 2018-11-29 2020-06-04 Austin Concrete LLC Imprinting Film for a Building Material and System and Method for Use of Same

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454274A (en) * 1982-09-29 1984-06-12 Ppg Industries, Inc. Aminoplast curable coating compositions containing cycloaliphatic sulfonic acid esters as latent acid catalysts
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
US5288741A (en) * 1989-04-29 1994-02-22 Roussel-Uclaf Use of polymers which contain units derived from 4-hydroxystyrene or 4-acetoxystyrene as reinforcing resins and adhesion promoters in rubber mixtures
CA2019693A1 (en) 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
JP2861253B2 (ja) 1990-05-15 1999-02-24 ソニー株式会社 感光性樹脂組成物
US5096975A (en) 1990-05-23 1992-03-17 Eastman Kodak Company Cross-linked polymers from vinyl benzene sulfonate salts and ethylenic hydroxy monomers
TW207009B (enExample) 1991-01-31 1993-06-01 Sumitomo Chemical Co
JP2811124B2 (ja) 1991-03-15 1998-10-15 三菱電機株式会社 パターン形成方法およびフォトマスクの製造方法
DE4112965A1 (de) 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4112972A1 (de) 1991-04-20 1992-10-22 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
GB2259152B (en) 1991-06-14 1995-01-11 Nippon Zeon Co Resist composition
US5292614A (en) 1991-08-02 1994-03-08 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern
JP2973626B2 (ja) * 1991-08-20 1999-11-08 富士通株式会社 レジスト組成物及びこれを用いたパターン形成方法
JP3000745B2 (ja) 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
US6472128B2 (en) * 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
EP0555749B1 (en) 1992-02-14 1999-05-19 Shipley Company Inc. Radiation sensitive compositions and processes
JPH05341522A (ja) 1992-06-09 1993-12-24 Fuji Photo Film Co Ltd ネガ型フオトレジスト組成物
EP0621508B1 (en) 1993-04-20 1996-09-25 Japan Synthetic Rubber Co., Ltd. Radiation sensitive resin composition
KR950001416A (ko) 1993-06-04 1995-01-03 미야베 요시까즈 네가형 감광성 조성물 및 이것을 사용한 패턴의 형성방법
US5536835A (en) * 1993-11-26 1996-07-16 Ppg Industries, Inc. Etherified alkyl or arylcarbamylmethylated aminotriazines and curable compositions containing the same
JPH07207218A (ja) * 1994-01-17 1995-08-08 Toagosei Co Ltd 塗料用樹脂組成物
US5445850A (en) * 1994-02-18 1995-08-29 Ppg Industries, Inc. Aminoplast cured acid etch resistant coating with good durability
EP0675410B1 (en) 1994-03-28 1999-08-04 Wako Pure Chemical Industries Ltd Resist composition for deep ultraviolet light
GB9406815D0 (en) * 1994-04-06 1994-05-25 Ici Plc Polymer
JP3549592B2 (ja) 1994-11-02 2004-08-04 クラリアント インターナショナル リミテッド 放射線感応性組成物
JPH08211620A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 微細レジストパターンの形成方法
US5541263A (en) * 1995-03-16 1996-07-30 Shipley Company, L.L.C. Polymer having inert blocking groups
JP3449664B2 (ja) 1995-04-19 2003-09-22 東京応化工業株式会社 ネガ型レジスト組成物
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
JP3456808B2 (ja) 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
US5585220A (en) * 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5919601A (en) * 1996-11-12 1999-07-06 Kodak Polychrome Graphics, Llc Radiation-sensitive compositions and printing plates
JPH10142793A (ja) * 1996-11-15 1998-05-29 Taiyo Ink Mfg Ltd アルカリ現像可能なソルダーレジスト組成物
JP3711550B2 (ja) * 1996-12-09 2005-11-02 日本曹達株式会社 狭分散アルケニルフェノール系共重合体及びその製造方法
JP3852868B2 (ja) * 1997-02-06 2006-12-06 富士写真フイルム株式会社 反射防止膜材料組成物及びそれを用いたレジストパターン形成方法
US5985524A (en) * 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
US6051489A (en) 1997-05-13 2000-04-18 Chipscale, Inc. Electronic component package with posts on the active side of the substrate
JP3650985B2 (ja) * 1997-05-22 2005-05-25 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物およびパターン製造法
JP3473887B2 (ja) * 1997-07-16 2003-12-08 東京応化工業株式会社 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法
WO1999011457A1 (en) * 1997-09-02 1999-03-11 Kodak Polychrome Graphics Llc Processless, laser imageable lithographic printing plate
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
TW457403B (en) * 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
JP3928278B2 (ja) * 1998-11-16 2007-06-13 Ｊｓｒ株式会社 反射防止膜形成組成物
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6610808B2 (en) * 1999-03-12 2003-08-26 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6054248A (en) * 1999-03-12 2000-04-25 Arch Specialty Chemicals, Inc. Hydroxy-diisocyanate thermally cured undercoat for 193 nm lithography
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
TW556047B (en) * 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
US6641971B2 (en) * 2001-06-15 2003-11-04 International Business Machines Corporation Resist compositions comprising silyl ketals and methods of use thereof

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