JP2004165402A5 - - Google Patents

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Publication number
JP2004165402A5
JP2004165402A5 JP2002329128A JP2002329128A JP2004165402A5 JP 2004165402 A5 JP2004165402 A5 JP 2004165402A5 JP 2002329128 A JP2002329128 A JP 2002329128A JP 2002329128 A JP2002329128 A JP 2002329128A JP 2004165402 A5 JP2004165402 A5 JP 2004165402A5
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JP
Japan
Prior art keywords
composition
carbon atoms
alkyl group
quaternary ammonium
ammonium hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002329128A
Other languages
English (en)
Japanese (ja)
Other versions
JP4170734B2 (ja
JP2004165402A (ja
Filing date
Publication date
Priority claimed from JP2002329128A external-priority patent/JP4170734B2/ja
Priority to JP2002329128A priority Critical patent/JP4170734B2/ja
Application filed filed Critical
Priority to US10/703,374 priority patent/US7309722B2/en
Priority to TW92131712A priority patent/TW200417586A/zh
Priority to CNB2003101149439A priority patent/CN100394559C/zh
Publication of JP2004165402A publication Critical patent/JP2004165402A/ja
Publication of JP2004165402A5 publication Critical patent/JP2004165402A5/ja
Priority to US11/999,076 priority patent/US20080118737A1/en
Publication of JP4170734B2 publication Critical patent/JP4170734B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002329128A 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 Expired - Fee Related JP4170734B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002329128A JP4170734B2 (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
US10/703,374 US7309722B2 (en) 2002-11-13 2003-11-07 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
TW92131712A TW200417586A (en) 2002-11-13 2003-11-12 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
CNB2003101149439A CN100394559C (zh) 2002-11-13 2003-11-13 多孔膜形成用组合物、多孔膜及其制造方法、层间绝缘膜和半导体装置
US11/999,076 US20080118737A1 (en) 2002-11-13 2007-12-04 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002329128A JP4170734B2 (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

Publications (3)

Publication Number Publication Date
JP2004165402A JP2004165402A (ja) 2004-06-10
JP2004165402A5 true JP2004165402A5 (enExample) 2006-10-26
JP4170734B2 JP4170734B2 (ja) 2008-10-22

Family

ID=32375709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002329128A Expired - Fee Related JP4170734B2 (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

Country Status (4)

Country Link
US (2) US7309722B2 (enExample)
JP (1) JP4170734B2 (enExample)
CN (1) CN100394559C (enExample)
TW (1) TW200417586A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4893905B2 (ja) * 2004-08-31 2012-03-07 独立行政法人産業技術総合研究所 ゼオライト用原料液体、ゼオライト結晶作成方法、ゼオライト用原料液体の作成方法、およびゼオライト薄膜
JP4684619B2 (ja) * 2004-10-22 2011-05-18 東京応化工業株式会社 シリカ系被膜形成用塗布液、シリカ系被膜形成用塗布液の調製方法
US7427570B2 (en) * 2005-09-01 2008-09-23 Micron Technology, Inc. Porous organosilicate layers, and vapor deposition systems and methods for preparing same
DE102006029849A1 (de) * 2006-06-27 2008-01-03 Nanoscape Ag Beschichtetes Molekularsieb
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
JP2008201833A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置
JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
JP4866290B2 (ja) * 2007-04-03 2012-02-01 信越化学工業株式会社 ゼオライト含有膜の製造方法
JP5231748B2 (ja) * 2007-04-03 2013-07-10 信越化学工業株式会社 ゼオライト微粒子の製造方法、安定化されたゼオライト及びその利用方法
WO2010021829A1 (en) * 2008-08-20 2010-02-25 Illinois Tool Works Inc. Mis-fuel inhibitor
JP6459489B2 (ja) * 2014-03-11 2019-01-30 三菱マテリアル株式会社 シリカ多孔質膜形成用液組成物及びその液組成物から形成されたシリカ多孔質膜
CN104459420B (zh) * 2014-12-30 2017-07-28 中国科学院微电子研究所 一种tsv孔内介质层的电学性能检测方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513983B1 (fr) * 1981-09-14 1986-10-24 Raffinage Cie Francaise Procede de preparation de zeolites synthetiques et zeolites obtenues par ce procede
JPS62220531A (ja) * 1986-03-24 1987-09-28 Central Glass Co Ltd 被覆用組成物
JP2589792B2 (ja) * 1988-12-27 1997-03-12 松下電器産業株式会社 不純物導入方法
NO912006D0 (no) 1991-05-24 1991-05-24 Sinvent As Fremgangsmaate for fremstilling av et silika-aerogel-lignende materiale.
JPH09194298A (ja) 1995-04-25 1997-07-29 Rikagaku Kenkyusho シリカ−界面活性剤ナノ複合体及びその製造方法
JP3813268B2 (ja) * 1996-03-25 2006-08-23 触媒化成工業株式会社 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材
US6084096A (en) * 1998-04-09 2000-07-04 Air Products And Chemicals, Inc. Triethylenediamine and piperazine synthesis using zeolite catalysts modified with a silicon-containing compound
JP2000044875A (ja) 1998-05-18 2000-02-15 Jsr Corp 膜形成用組成物、膜の形成方法および低密度膜
DE19829870A1 (de) 1998-07-03 2000-01-05 Degussa Mikro- und/oder mesoporöse zeolithische Materialien als Füllkomponenten in Dentalkompositen
KR100618301B1 (ko) * 1998-09-01 2006-08-31 쇼꾸바이 카세이 고교 가부시키가이샤 낮은 유전상수를 지니는 실리카-포함 필름을 형성하기위한 코팅 액체 및 그의 필름으로 코팅된 기질
DE19853971B4 (de) * 1998-11-23 2011-06-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anorganisch/organische Polysiloxanhybridpolymere und ihre Verwendung
JP3733824B2 (ja) 1999-08-12 2006-01-11 Ｊｓｒ株式会社 シリカ系被膜形成用塗布液の製造方法
JP4524822B2 (ja) 1999-10-29 2010-08-18 株式会社豊田中央研究所 高結晶性シリカメソ多孔体薄膜の製造方法
US6685889B1 (en) * 1999-12-14 2004-02-03 Purdue Research Foundation Photochemical catalysts and methods for their manufacture and use
JP2001203197A (ja) 2000-01-21 2001-07-27 Jsr Corp 膜、および膜の形成方法
AU2001240115A1 (en) * 2000-03-10 2001-09-24 Pharmacia Corporation Method for the preparation of tetrahydrobenzothiepines
US6440309B1 (en) * 2000-05-17 2002-08-27 Yoram Cohen Ceramic-supported polymer (CSP) pervaporation membrane
KR100528950B1 (ko) 2001-01-29 2005-11-16 제이에스알 가부시끼가이샤 유전체용 복합 입자, 초미립자 복합 수지 입자, 유전체형성용 조성물 및 그의 용도

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