JP4170734B2 - 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 - Google Patents

多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 Download PDF

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JP4170734B2
JP4170734B2 JP2002329128A JP2002329128A JP4170734B2 JP 4170734 B2 JP4170734 B2 JP 4170734B2 JP 2002329128 A JP2002329128 A JP 2002329128A JP 2002329128 A JP2002329128 A JP 2002329128A JP 4170734 B2 JP4170734 B2 JP 4170734B2
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porous film
film
zeolite
hydroxide
same
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Expired - Fee Related
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JP2002329128A
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Japanese (ja)
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JP2004165402A5 (enExample
JP2004165402A (ja
Inventor
勤 荻原
不二夫 八木橋
秀夫 中川
勝 笹子
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Shin Etsu Chemical Co Ltd
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd, Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2002329128A priority Critical patent/JP4170734B2/ja
Priority to US10/703,374 priority patent/US7309722B2/en
Priority to TW92131712A priority patent/TW200417586A/zh
Priority to CNB2003101149439A priority patent/CN100394559C/zh
Publication of JP2004165402A publication Critical patent/JP2004165402A/ja
Publication of JP2004165402A5 publication Critical patent/JP2004165402A5/ja
Priority to US11/999,076 priority patent/US20080118737A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/02—Polysilicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
JP2002329128A 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 Expired - Fee Related JP4170734B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002329128A JP4170734B2 (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
US10/703,374 US7309722B2 (en) 2002-11-13 2003-11-07 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
TW92131712A TW200417586A (en) 2002-11-13 2003-11-12 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
CNB2003101149439A CN100394559C (zh) 2002-11-13 2003-11-13 多孔膜形成用组合物、多孔膜及其制造方法、层间绝缘膜和半导体装置
US11/999,076 US20080118737A1 (en) 2002-11-13 2007-12-04 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002329128A JP4170734B2 (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

Publications (3)

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JP2004165402A JP2004165402A (ja) 2004-06-10
JP2004165402A5 JP2004165402A5 (enExample) 2006-10-26
JP4170734B2 true JP4170734B2 (ja) 2008-10-22

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US (2) US7309722B2 (enExample)
JP (1) JP4170734B2 (enExample)
CN (1) CN100394559C (enExample)
TW (1) TW200417586A (enExample)

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JP4684619B2 (ja) * 2004-10-22 2011-05-18 東京応化工業株式会社 シリカ系被膜形成用塗布液、シリカ系被膜形成用塗布液の調製方法
US7427570B2 (en) * 2005-09-01 2008-09-23 Micron Technology, Inc. Porous organosilicate layers, and vapor deposition systems and methods for preparing same
DE102006029849A1 (de) * 2006-06-27 2008-01-03 Nanoscape Ag Beschichtetes Molekularsieb
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
JP2008201833A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置
JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
JP4866290B2 (ja) * 2007-04-03 2012-02-01 信越化学工業株式会社 ゼオライト含有膜の製造方法
JP5231748B2 (ja) * 2007-04-03 2013-07-10 信越化学工業株式会社 ゼオライト微粒子の製造方法、安定化されたゼオライト及びその利用方法
WO2010021829A1 (en) * 2008-08-20 2010-02-25 Illinois Tool Works Inc. Mis-fuel inhibitor
JP6459489B2 (ja) * 2014-03-11 2019-01-30 三菱マテリアル株式会社 シリカ多孔質膜形成用液組成物及びその液組成物から形成されたシリカ多孔質膜
CN104459420B (zh) * 2014-12-30 2017-07-28 中国科学院微电子研究所 一种tsv孔内介质层的电学性能检测方法

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JPS62220531A (ja) * 1986-03-24 1987-09-28 Central Glass Co Ltd 被覆用組成物
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Publication number Publication date
TW200417586A (en) 2004-09-16
CN1501454A (zh) 2004-06-02
US20080118737A1 (en) 2008-05-22
US20040105986A1 (en) 2004-06-03
US7309722B2 (en) 2007-12-18
JP2004165402A (ja) 2004-06-10
CN100394559C (zh) 2008-06-11

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