JP2004039701A5 - - Google Patents

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Publication number
JP2004039701A5
JP2004039701A5 JP2002191493A JP2002191493A JP2004039701A5 JP 2004039701 A5 JP2004039701 A5 JP 2004039701A5 JP 2002191493 A JP2002191493 A JP 2002191493A JP 2002191493 A JP2002191493 A JP 2002191493A JP 2004039701 A5 JP2004039701 A5 JP 2004039701A5
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JP
Japan
Prior art keywords
semiconductor layer
crystalline semiconductor
conductivity type
type impurity
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002191493A
Other languages
English (en)
Japanese (ja)
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JP2004039701A (ja
JP4271413B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002191493A priority Critical patent/JP4271413B2/ja
Priority claimed from JP2002191493A external-priority patent/JP4271413B2/ja
Priority to US10/607,542 priority patent/US7329594B2/en
Publication of JP2004039701A publication Critical patent/JP2004039701A/ja
Publication of JP2004039701A5 publication Critical patent/JP2004039701A5/ja
Priority to US11/978,585 priority patent/US7534705B2/en
Application granted granted Critical
Publication of JP4271413B2 publication Critical patent/JP4271413B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002191493A 2002-06-28 2002-06-28 半導体装置の作製方法 Expired - Fee Related JP4271413B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002191493A JP4271413B2 (ja) 2002-06-28 2002-06-28 半導体装置の作製方法
US10/607,542 US7329594B2 (en) 2002-06-28 2003-06-27 Method of manufacturing a semiconductor device
US11/978,585 US7534705B2 (en) 2002-06-28 2007-10-30 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002191493A JP4271413B2 (ja) 2002-06-28 2002-06-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004039701A JP2004039701A (ja) 2004-02-05
JP2004039701A5 true JP2004039701A5 (cg-RX-API-DMAC7.html) 2005-10-20
JP4271413B2 JP4271413B2 (ja) 2009-06-03

Family

ID=31701052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002191493A Expired - Fee Related JP4271413B2 (ja) 2002-06-28 2002-06-28 半導体装置の作製方法

Country Status (2)

Country Link
US (2) US7329594B2 (cg-RX-API-DMAC7.html)
JP (1) JP4271413B2 (cg-RX-API-DMAC7.html)

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JP2006191125A (ja) * 2006-01-27 2006-07-20 Ftl:Kk Ｓｏｉウェーハの製造方法
JP2006203250A (ja) * 2006-04-05 2006-08-03 Ftl:Kk ３次元半導体デバイスの製造方法
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20120059509A (ko) * 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN103193195B (zh) * 2013-03-08 2015-04-01 厦门大学 一种重掺杂硼硅片的再分布方法
US9843014B2 (en) * 2015-02-20 2017-12-12 Apple Inc. Electronic devices with sapphire-coated substrates
WO2017116905A1 (en) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Gas flow control for millisecond anneal system

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