JP2007053364A5 - - Google Patents

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Publication number
JP2007053364A5
JP2007053364A5 JP2006218286A JP2006218286A JP2007053364A5 JP 2007053364 A5 JP2007053364 A5 JP 2007053364A5 JP 2006218286 A JP2006218286 A JP 2006218286A JP 2006218286 A JP2006218286 A JP 2006218286A JP 2007053364 A5 JP2007053364 A5 JP 2007053364A5
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JP
Japan
Prior art keywords
thin film
silicone
laser beam
polycrystalline
amorphous
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JP2006218286A
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English (en)
Japanese (ja)
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JP4864596B2 (ja
JP2007053364A (ja
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Priority claimed from KR1020050076347A external-priority patent/KR101132404B1/ko
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Publication of JP2007053364A5 publication Critical patent/JP2007053364A5/ja
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Publication of JP4864596B2 publication Critical patent/JP4864596B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006218286A 2005-08-19 2006-08-10 多結晶シリコーン薄膜の製造方法及びこの方法を利用した薄膜トランジスタの製造方法 Expired - Fee Related JP4864596B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050076347A KR101132404B1 (ko) 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법
KR10-2005-0076347 2005-08-19

Publications (3)

Publication Number Publication Date
JP2007053364A JP2007053364A (ja) 2007-03-01
JP2007053364A5 true JP2007053364A5 (cg-RX-API-DMAC7.html) 2009-09-24
JP4864596B2 JP4864596B2 (ja) 2012-02-01

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ID=37738099

Family Applications (1)

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JP2006218286A Expired - Fee Related JP4864596B2 (ja) 2005-08-19 2006-08-10 多結晶シリコーン薄膜の製造方法及びこの方法を利用した薄膜トランジスタの製造方法

Country Status (5)

Country Link
US (2) US7364992B2 (cg-RX-API-DMAC7.html)
JP (1) JP4864596B2 (cg-RX-API-DMAC7.html)
KR (1) KR101132404B1 (cg-RX-API-DMAC7.html)
CN (1) CN100555570C (cg-RX-API-DMAC7.html)
TW (1) TWI402989B (cg-RX-API-DMAC7.html)

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WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
US8012861B2 (en) * 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
JP5369640B2 (ja) * 2008-02-19 2013-12-18 旭硝子株式会社 Ｅｕｖｌ用光学部材、およびその平滑化方法
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US20110175099A1 (en) * 2008-02-29 2011-07-21 The Trustees Of Columbia University In The City Of New York Lithographic method of making uniform crystalline si films
WO2009111326A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash light annealing for thin films
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CN102232239A (zh) 2008-11-14 2011-11-02 纽约市哥伦比亚大学理事会 用于薄膜结晶的系统和方法
MX2012005204A (es) * 2009-11-03 2012-09-21 Univ Columbia Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
CN102651311B (zh) * 2011-12-20 2014-12-17 京东方科技集团股份有限公司 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜
TWI495091B (zh) * 2012-02-16 2015-08-01 Au Optronics Corp 陣列基板及多晶矽層的製作方法
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
KR20170041962A (ko) 2015-10-07 2017-04-18 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법 및 박막 트랜지스터 표시판
KR20210070417A (ko) 2019-12-04 2021-06-15 삼성디스플레이 주식회사 표시 장치

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KR101016510B1 (ko) * 2004-06-30 2011-02-24 엘지디스플레이 주식회사 레이저 결정화방법 및 결정화 장치
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films

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