JP2004036004A - 気化液体反応物のパルス的供給の方法および装置 - Google Patents
気化液体反応物のパルス的供給の方法および装置 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
【解決手段】 液体反応物(または、液体溶剤に溶解された固体反応物)の大部分は、保管容器で反応炉高温ゾーンの外に保たれるので、長く高温にさらされて分解されることがない。保管容器は反応炉の高温ゾーン内の気化チャンバと液体で連絡しているので、気化チャンバ内に高い蒸気圧を維持することができる。高温ゾーンの外の保管容器の再充填が簡単化され、さらに液体反応物の大部分は不安定になる温度に長くさらされない。同時に、高温ゾーン内に気化チャンバを保持することの利点が維持される。さらに、堆積操作間に、または、必要でないときには周期的に、気化チャンバ内に残っている液体反応物を、より低温に保たれている保管容器、または別個の液抜き容器に排出して戻すことができる。
【選択図】 図1
Description
102 液体反応物
104 空間
110 給送ライン
112 不活性ガス給送ライン
124 液体反応物給送ライン
134 パージライン
136 不活性ガス供給ライン
160 液抜き容器
162 排出された反応物
164 空間
174 液抜き導管
310 気化チャンバ
312 液体反応物(未気化反応物)
314 気化反応物
410 反応チャンバ
420 気化反応物導管
424 オリフィス
422 バイパス導管
430 排出導管
440 前部ラインフィルタ
450 ポンプ
452 ポンプ排出管
500 単一低圧ゾーン
Claims (34)
- 低蒸気圧反応物を反応チャンバに送るためのシステムであって、
ある量の液体反応物を含んだ、第1の温度T1の保管容器と、
T1よりも高い第2の温度T2のホットゾーンに配置された気化チャンバであって、液体反応物給送ラインを通して前記保管容器と接続され、かつ液体反応物が部分的に充填され、さらに前記気化チャンバの上の部分の前記液体反応物の表面の上に気化反応物を集めるように構成された気化チャンバと、
T1よりも高い第3の温度T3のホットゾーンに配置され、気化反応物給送導管を通して前記気化チャンバに接続された反応チャンバと
を備えるシステム。 - さらに、使用後に残留反応物を排出するように、一端が前記気化チャンバの底部分に接続された液抜きを備える、請求項1に記載のシステム。
- 前記液抜きが、ポンプおよび前記保管容器と連絡した前記液体反応物給送ラインを備える、請求項2に記載のシステム。
- 前記液抜きは、一端が前記気化チャンバと連絡し、他端が排出された反応物を集める液抜き容器と連絡する液抜き導管を備える、請求項2に記載のシステム。
- さらに、前記液抜き導管に液体流量測定デバイスを備える、請求項4に記載のシステム。
- T3がT2と同じかより高温である、請求項1に記載のシステム。
- 前記気化チャンバのホットゾーンと前記反応チャンバのホットゾーンが密接結合している、請求項1に記載のシステム。
- 前記気化チャンバのホットゾーンおよび前記反応チャンバのホットゾーンが、互いに自由に熱的に連絡し、かつ前記保管容器から熱的に絶縁されている、請求項1に記載のシステム。
- 前記気化チャンバのホットゾーンが、前記反応チャンバのホットゾーンの一部である、請求項1に記載のシステム。
- 気化反応物が、前記気化チャンバから不活性ガスバルブシステムを通して前記反応チャンバに向けられる、請求項1に記載のシステム。
- さらに、前記液体反応物給送導管に液体流量制御デバイスを備える、請求項1に記載のシステム。
- 固体または液体ソースから気相反応物を供給する方法であって、
保管容器から、前記保管容器よりも高温である気化チャンバに前駆物質を含む液体を供給するステップと、
前記気化チャンバで前記前駆物質を気化するステップと、
前記気化された前駆物質を反応チャンバに輸送するステップと、
前記反応チャンバで前記気化前駆物質を使用して気相堆積プロセスを行うステップと、
前記気相堆積プロセスを行った後で、前記気化チャンバを開くことなしに、前記気化チャンバから未気化液体を排出するステップとを含む方法。 - 前記液体が前記前駆物質である、請求項12に記載の方法。
- 気化するステップが、前記気化チャンバ中に未気化液体を保持するステップと、前記未気化液体の上に気化された前駆物質を生成するステップを含む、請求項13に記載の方法。
- 前記液体が、溶剤に溶解された固体反応物ソースを含む、請求項12に記載の方法。
- 前記前駆物質を気化するステップが、前記溶剤を気化するステップと、前記固体反応物ソースを気化するステップを含む、請求項15に記載の方法。
- 排出するステップが、前記気化チャンバに溶剤を供給して残っている固体反応物ソースを溶解するステップと、結果として得られた溶液を排出するステップを含む、請求項16に記載の方法。
- 排出するステップが、前記未気化液体を前記保管容器に戻すステップを含む、請求項12に記載の方法。
- 排出するステップが、さらにポンプを使用するステップを含む、請求項18に記載の方法。
- 排出するステップが、前記未気化液体を専用液抜き容器に取り除くステップを含む、請求項12に記載の方法。
- 前記保管容器が、前記前駆物質が安定である温度に保たれている、請求項12に記載の方法。
- 前記気化チャンバが、前記前駆物質の沸点より上の気化温度に保たれている、請求項21に記載の方法。
- 輸送するステップが、前記気化温度以上に維持されている導管に沿って前記気化前駆物質を流すステップを含む、請求項22に記載の方法。
- 前記気化チャンバが、前記反応チャンバを収容する第2のホットゾーンと密接結合した第1のホットゾーン内に保持される、請求項22に記載の方法。
- 前記第1のホットゾーンおよび前記第2のホットゾーンが少なくともいくつかの絶縁要素を共有する、請求項24に記載の方法。
- 前記気化チャンバおよび前記反応チャンバが単一ホットゾーン内に維持されている、請求項22に記載の方法。
- 輸送するステップが、前記気化前駆物質のパルスを少なくとも1つの他の前駆物質のパルスと交互に前記反応チャンバに供給するステップを含む、請求項22に記載の方法。
- 輸送するステップが、前記気化チャンバから前記反応チャンバへの前記気化前駆物質の流れを、不活性ガス拡散バリアを用いて、交互に停止し許可するステップを含む、請求項27に記載の方法。
- 不活性ガス拡散バリアで流れを交互に停止し許可するステップが、前記気化チャンバを収容するホットゾーンの外で不活性ガス流のバルブを制御するステップを含む、請求項28に記載の方法。
- 前記気相堆積が原子層の堆積を含む、請求項12に記載の方法。
- 排出するステップが、所定数の堆積の間で規則的な間隔で行われる、請求項12に記載の方法。
- 排出するステップが、所定の時間経過後に堆積操作の間で規則的に行われる、請求項12に記載の方法。
- さらに、前記保管容器からの液体を前記気化チャンバに周期的に再充填するステップを含む、請求項12に記載の方法。
- 周期的に再充填するステップが、前記気化チャンバの未気化液体のレベルが所定のレベルより下に落ちたことを感知するステップを含む、請求項33に記載の方法。
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- 2003-07-08 US US10/615,332 patent/US20040079286A1/en not_active Abandoned
- 2003-07-14 JP JP2003274331A patent/JP4397188B2/ja not_active Expired - Lifetime
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JP2011518256A (ja) * | 2008-04-22 | 2011-06-23 | ピコサン オーワイ | 堆積反応炉のための装置および方法 |
US9909212B2 (en) | 2010-08-30 | 2018-03-06 | Beneq Oy | Apparatus for processing substrate surface |
CN112538614A (zh) * | 2019-09-20 | 2021-03-23 | Asm Ip 控股有限公司 | 半导体处理装置 |
Also Published As
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JP4397188B2 (ja) | 2010-01-13 |
TW200402774A (en) | 2004-02-16 |
US20040079286A1 (en) | 2004-04-29 |
TWI277140B (en) | 2007-03-21 |
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