KR100685798B1 - 박막증착용 기화유니트 - Google Patents
박막증착용 기화유니트 Download PDFInfo
- Publication number
- KR100685798B1 KR100685798B1 KR1020060029380A KR20060029380A KR100685798B1 KR 100685798 B1 KR100685798 B1 KR 100685798B1 KR 1020060029380 A KR1020060029380 A KR 1020060029380A KR 20060029380 A KR20060029380 A KR 20060029380A KR 100685798 B1 KR100685798 B1 KR 100685798B1
- Authority
- KR
- South Korea
- Prior art keywords
- vaporizer
- liquid source
- thin film
- housing
- wafer
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
- 액체소스가 저장되는 저장조와 연결되며, 그 저장조에서 유입된 액체소스가 기체소스가 되도록 그 액체소스를 기화시키며, 웨이퍼에 박막이 형성되도록 그 웨이퍼를 향해 상기 기체소스를 분사하는 샤워헤드를 포함하는 리액터에 연결되는 기화기를 구비하는 박막증착용 기화유니트에 있어서,그 일측은 상기 기화기와 연결되며 그 타측은 상기 리액터와 연결되며, 상기 기화기에서 기화되지 않은 액체소스를 기화시키는 보조 기화기를 구비하며,상기 저장조에서 유입된 액체소스가 모두 상기 기화기 및 보조 기화기에서 기화되어 상기 리액터로 유출되는 것을 특징으로 하는 박막증착용 기화유니트.
- 제 1항에 있어서,상기 보조 기화기는,상기 기화기에서 유입되는 기체소스 또는 액체소스 및 기체소스가 유동 가능하도록 중공 형상으로 이루어지며, 상기 샤워헤드와 연결되는 배출구를 가지는 하우징과,상기 하우징에 그 하우징의 내측면과 일정 간격이 유지되도록 삽입되며, 상기 하우징에 유입되는 액체소스를 기화시키는 히터를 구비하는 것을 특징으로 하는 박막증착용 기화유니트.
- 제 2항에 있어서,상기 하우징의 외주면에는 단열재가 배치되어 있는 것을 특징으로 하는 박막증착용 기화유니트.
- 제 2항에 있어서,상기 하우징의 외주면에는 히터가 배치되어 있는 것을 특징으로 하는 박막증착용 기화유니트.
- 제 1항 내지 제 4항 중 어느 한 항에 있어서,상기 기화기와 저장조 사이에는, 상기 저장조의 액체소스가 상기 기화기로 유입되는 것을 제어하기 위한 밸브가 설치되어 있는 것을 특징으로 하는 박막증착용 기화유니트.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050115353 | 2005-11-30 | ||
KR20050115353 | 2005-11-30 |
Publications (1)
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KR100685798B1 true KR100685798B1 (ko) | 2007-02-22 |
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KR1020060029380A KR100685798B1 (ko) | 2005-11-30 | 2006-03-31 | 박막증착용 기화유니트 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60243266A (ja) | 1984-05-16 | 1985-12-03 | Toshiba Corp | 蒸着装置 |
JPS61110759A (ja) | 1984-11-01 | 1986-05-29 | Toshiba Corp | 蒸着装置 |
KR20010023887A (ko) * | 1997-09-11 | 2001-03-26 | 조셉 제이. 스위니 | 기화 및 증착 장치 및 방법 |
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2006
- 2006-03-31 KR KR1020060029380A patent/KR100685798B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60243266A (ja) | 1984-05-16 | 1985-12-03 | Toshiba Corp | 蒸着装置 |
JPS61110759A (ja) | 1984-11-01 | 1986-05-29 | Toshiba Corp | 蒸着装置 |
KR20010023887A (ko) * | 1997-09-11 | 2001-03-26 | 조셉 제이. 스위니 | 기화 및 증착 장치 및 방법 |
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