WO2004009868A1 - Vaporizer for thin film deposition apparatus - Google Patents

Vaporizer for thin film deposition apparatus Download PDF

Info

Publication number
WO2004009868A1
WO2004009868A1 PCT/KR2003/001392 KR0301392W WO2004009868A1 WO 2004009868 A1 WO2004009868 A1 WO 2004009868A1 KR 0301392 W KR0301392 W KR 0301392W WO 2004009868 A1 WO2004009868 A1 WO 2004009868A1
Authority
WO
WIPO (PCT)
Prior art keywords
primary body
vaporizer
jet
transfer gas
thin film
Prior art date
Application number
PCT/KR2003/001392
Other languages
French (fr)
Inventor
Byung-Chul Cho
Keun-Jae Yoo
Sang-Kyu Lee
Hyun-Soo Kyung
Original Assignee
Ips Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd. filed Critical Ips Ltd.
Priority to AU2003281548A priority Critical patent/AU2003281548A1/en
Publication of WO2004009868A1 publication Critical patent/WO2004009868A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Definitions

  • the present invention relates to a vaporizer for a thin film deposition apparatus. More specifically, the present invention relates to a vaporizer for a thin film deposition apparatus, which effectively vaporizes one or more precursors and uniformly mixes the precursors with a transfer gas.
  • BST barium strontium titanate
  • PZT lead zirconate titanate
  • ALD atomic film deposition
  • CVD chemical vapor deposition
  • the present invention provides a vaporizer for a thin film deposition apparatus, which enables precise control of precursors, effective vaporization, and uniform mixtures of precursors with a transfer gas.
  • a vaporizer for a thin film deposition apparatus comprising a primary body, which has an inner space and includes a transfer gas inlet pipe through which a transfer gas is supplied, a mixed gas outlet pipe through which a mixed gas is exhausted, and a first heater installed in the primary body to heat the inner space; and one or more jet units, which are installed on sides of the primary body to jet precursors into the primary body.
  • Each of the jet units includes a pipe body, which is connected to a precursor inlet pipe through which precursors are supplied, a solenoid valve, which is installed in the pipe body and selectively opens/closes off a jet nozzle installed toward the inside of the primary body in response to an external electric signal, and a cooling unit, which is installed at the outside of the pipe body.
  • the vaporizer for the thin film deposition apparatus further comprises a shower nozzle, which is installed close to the transfer gas inlet pipe in the primary body and includes a plurality of holes.
  • the show nozzle is used to uniformly distribute the transfer gas in the primary body.
  • the vaporizer for the thin film deposition apparatus further comprises a second heater, which is installed at the center of the primary body to heat supplied precursors, and a sensor, which measures a temperature in the primary body and generates a signal for controlling the first heater and/or the second heater.
  • the vaporizer for the thin film deposition apparatus further comprises an insulator which is wrapped around the outside of the primary body.
  • the primary body has a cylindrical shape or a polygonal shape.
  • the bottom of the primary body has a conic shape such that a mixed gas of a precursor with a transfer gas smoothly flows through the primary body.
  • FIG. 1 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a first embodiment of the present invention
  • FIG. 2 is a perspective view of a shower nozzle as shown in FIG. 1 ;
  • FIG. 3 is a partial top sectional view of the vaporizer as shown in FIG. 1 ;
  • FIG. 4 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a second embodiment of the present invention.
  • FIG. 5 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a third embodiment of the present invention.
  • FIG. 6 is a partial top sectional view of the vaporizer as shown in • FIG. 5;
  • FIG. 7 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a fourth embodiment of the present invention.
  • FIG. 1 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a perspective view of a shower nozzle as shown in FIG. 1.
  • FIG. 3 is a partial top sectional view of the vaporizer as shown in FIG. 1.
  • a vaporizer comprises a primary body 10, which has an inner space, and a first jet unit 20 and a second jet unit 30, which are symmetrically installed with respect to the primary body 10.
  • the primary body 10 in which a precursor and a transfer gas will be mixed, includes a transfer gas inlet pipe 11 , which is installed at the top of the primary body 10 and through which a transfer gas is supplied, and a mixed gas outlet pipe 12, which is installed at the bottom of the primary body 10 and through which a mixed gas is exhausted.
  • the exhausted mixed gas is supplied to a reaction chamber (not shown).
  • a shower nozzle 13 is installed in the primary body 10 so that the supplied transfer gas can be uniformly distributed.
  • the shower nozzle 13 has a cylindrical shape and includes a plurality of holes 13a therein.
  • the shower nozzle 13 allows a transfer gas to be uniformly distributed in the primary body 10 so that the transfer gas can be uniformly mixed with liquid precursors that will be jetted from the first jet unit 20 and the second jet unit 30.
  • a first heater 14 is installed in the primary body 10 to heat the inside of the primary body.
  • the first heater 14 covers the inside of the primary body 10 and heats a precursor supplied to the primary body 10.
  • An insulator 15 is installed at the outside of the primary body 10.
  • the insulator 15 is wrapped around the outside of the primary body 10 and prevents the passage of heat into or out of the primary body 10.
  • the inner bottom of the primary body 10 has a conic shape such that a mixed gas of a precursor with a transfer gas smoothly flows through the primary body 10.
  • the mixed gas of the precursor with the transfer gas does not pile up in the primary body 10 but can be effectively exhausted through the conic bottom of the primary body 10.
  • the primary body 10 has a conic shape, it is also possible to form a primary body in the shape of a cylinder or a polygon.
  • the primary body 10 may be formed in the shape of a triangular pillar, a square pillar, a pentagonal pillar, or a hexagonal pillar.
  • the present embodiment adopts two jet units, i.e., the first jet unit 20 and the second jet unit 30, each of which is used to jet a different precursor into the primary body 10.
  • Each of the jet units 20 and 30 includes a pipe body, a solenoid valve installed in the pipe body, and a cooling unit installed at the outside of the pipe body.
  • the jet units of the present embodiment include first and second pipe bodies, first and second solenoid valves, and first and second cooling units.
  • the jet units employ electrically operated solenoid valves.
  • the first jet unit 20 includes a first pipe body 21 installed at one side of the primary body 10, a first solenoid valve 22, which is installed in the first pipe body 21 and controlled by an external electric signal, and a first cooling unit 23 installed at the outside of the first pipe body 21.
  • a first jet nozzle 22a is installed at one side of the first solenoid valve 22 toward the inside of the primary body 10.
  • the first pipe body 21 is connected to a first precursor inlet pipe 21a through which a precursor is supplied.
  • the first solenoid valve 22 a known solenoid valve, is used to selectively open/close off the first jet nozzle 22a in response to an electric signal.
  • the first cooling unit 23 prevents a temperature increase in the first jet unit, more specifically, in the first solenoid valve 22 due to heat supplied from the primary body 10.
  • the first jet unit 20 includes a cooling path, which may be wrapped around or place outside the first pipe body 21 and through which cooling water or cooling air flows. The first cooling unit 23 cools the first jet unit 20 to minimize change in quality of a precursor due to heat transmission from the primary body 10.
  • a plurality of O-rings 24 may be included to prevent gas in the primary body 10 from flowing backward to the first jet unit 20 or to prevent an external gas from flowing into the primary body 10 and the first precursor inlet pipe 21a.
  • the O-rings 24 may be installed between the first pipe body 21 and the first solenoid valve 22 or between the primary body 10 and the first jet unit 20.
  • the second jet unit 30 is almost similar to the first jet unit 20. That is, the second jet unit 30 includes a second pipe body 31 installed at the other side of the primary body 10, a second solenoid valve 32 installed in the second pipe body 31 , and a second cooling unit 33 installed at the outside of the second pipe body 31. A second jet nozzle 32a is mounted at one side of the second solenoid valve 32 toward the inside of the primary body 10. Also, the second pipe body 31 is connected to a second precursor inlet pipe 31a through which a precursor is supplied. Since the configuration of the second jet unit 30 is almost similar to that of the first jet unit 20, a detailed description will be omitted here. Each jet unit can jet a different precursor into the primary body 10 to obtain a desired mixture of precursors.
  • the dimension of the vaporizer is determined in consideration of the amounts of precursors jetted from jet nozzles, jet pressures of the precursors, and suction pressures of the precursors into the reaction chamber. If the vaporizer includes a plurality of jet units, the dimension of the vaporizer is adjusted so as to avoid interferences between jetted precursors.
  • the dimension of the vaporizer should be changed depending on whether a thin film is formed of a multiple system thin film, such as AxBxCx, or a multi-layered thin film, such as A ⁇ B ⁇ /C ⁇ D ⁇ .
  • a thin film is formed of a multiple system thin film, such as AxBxCx
  • the dimension of a vaporizer is too large, two precursors cannot be uniformly mixed in the vaporizer or a reaction chamber.
  • a multi-layered thin film, such as A ⁇ B x /C ⁇ D x is deposited, and the dimension of a vaporizer is too small, one jet nozzle may be contaminated by a precursor jetted from another jet nozzle.
  • different thin films having desired compositions cannot be obtained. Therefore, the dimension of a vaporizer should be changed according to the thin film type.
  • a transfer gas is supplied through the transfer gas inlet pipe 11 , flows through the shower nozzle 13, and is uniformly distributed in the primary body 10.
  • a precursor flows into the first jet unit 20 or the second jet unit 30, is jetted into the primary body 10 by the jet nozzle 22a or 32a, and is uniformly mixed with the transfer gas.
  • a continuously supplied transfer gas allows a mixed gas of the transfer gas with the precursor to flow through the mixed gas outlet pipe 12 into the reaction chamber.
  • the solenoid valves 22 and 32 of the first and second jet units 20 and 30 the amounts of the precursors supplied to the primary body 10 can be precisely adjusted.
  • FIG. 4 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a second embodiment of the present invention. Unlike in the first embodiment, the second embodiment uses 3 jet units.
  • the 3 jet units i.e., a first jet unit 20, a second jet unit 30, and a third jet unit 40, are symmetrically installed with respect to a primary body 10.
  • the first, second, and third jet units 20, 30, and 40 include first, second, and third pipe bodies 21 , 31 , and 41 , which are symmetrically installed with respect to the primary body 10; first, second, and third solenoid valves 22, 32, and 42, which are respectively installed in the first, second, and third pipe bodies 21 , 31 , and 41 ; and first, second, and third cooling units 23, 33, and 43, which are respectively installed at the outside of the first, second, and third pipe bodies 21 , 31 , and 41.
  • First, second, and third jet nozzles 22a, 32a, and 33a are mounted at one side of the first, second, and third solenoid valves 22, 32, and 42, respectively.
  • first, second, and third pipe bodies 21 , 31 , and 41 are coupled to first, second, and third precursor inlet pipes 21a, 31a, and 41 a, respectively, through which respective precursors are supplied. Since the configuration of the vaporizer is almost similar to that in the first embodiment, a detailed description will be omitted here.
  • FIG. 5 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a third embodiment of the present invention.
  • FIG. 6 is a partial top sectional view of the vaporizer as shown in FIG. 5.
  • a primary body 10 of the third embodiment further comprises a second heater .16 independent of a first heater 14 and a sensor 17 capable of measuring temperature in a primary body 10.
  • the second heater 16 is installed at the center of the primary body 10.
  • the second heater 16 operates independent of the first heater 14 or in synchrony with the first heater 14 and instantly heats a precursor supplied to the primary body 10.
  • a liquid precursor used in CVD or ALD should reach the highest possible atmospheric pressure in the vaporizer.
  • the second heater 16 in addition to the first heater 14, is installed so that the inside of the primary body 10 can be maintained at a constant temperature and a sufficient energy can be applied to the precursor.
  • the sensor 17 is used to precisely measure a temperature in the primary body 10 and generates a signal for controlling operations of the first and second heaters 14 and 16.
  • FIG. 7 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a fourth embodiment of the present invention.
  • the fourth embodiment uses 3 jet units, i.e., a first jet unit 20, a second jet unit 30, and a third jet unit 40, which are symmetrically installed with respect to a primary body 10.
  • a vaporizer may include one or more jet units.
  • the vaporizer of the present invention can be used in a CVD apparatus or an ALD apparatus and in any system requiring the improved endurance, uniform film deposition, and improved efficiency due to temperature-controlled surface.
  • the vaporizer can be used not only in many other electric devices but also to deposit one or more insulators, dielectric materials, or conductive materials.
  • a primary body of a vaporizer includes a plurality of jet units, which can be instantly controlled using electric signals.
  • the amounts of precursors supplied from the jet units can be precisely adjusted and uniformly mixed with a transfer gas. Consequently, if the vaporizer is used in a thin film deposition apparatus, a multiple system thin film or a multi-layered thin film having a uniform degree of purity can be effectively deposited.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A vaporizer for a thin film deposition apparatus. The vaporizer includes a primary body, which has an innerspace and comprises a transfer gas inlet pipe through which a transfer gas is supplied, a mixed gas outletpipe through which a mixed gas is exhausted, and a first heater which is installed in the primary body to heatthe inner space; and one or more jet units, which are installed on sides of the primary body to jet precursorsinto the primary body.

Description

VAPORIZER FOR THIN FILM DEPOSITION APPARATUS
Technical Field
The present invention relates to a vaporizer for a thin film deposition apparatus. More specifically, the present invention relates to a vaporizer for a thin film deposition apparatus, which effectively vaporizes one or more precursors and uniformly mixes the precursors with a transfer gas.
Background Art
As integrated circuits (ICs) have become more highly integrated, materials having a high dielectric constant, such as barium strontium titanate (BST) and lead zirconate titanate (PZT), have become strongly relied upon. When atomic film deposition (ALD) or chemical vapor deposition (CVD) is carried out using these materials, it is most important that various precursors required for forming BST or PZT be appropriately processed.
However, because precursors processing is very complicated, it is difficult to embody organic metal compounds needed for forming a thin film of a high degree of purity. Thus, to create organic metal compounds used in ALD or CVD, more attentions are paid to developments in vaporizers capable of precisely controlling precursors, effectively vaporizing the precursors, and uniformly mixing the precursors with a transfer gas.
Disclosure of the Invention
The present invention provides a vaporizer for a thin film deposition apparatus, which enables precise control of precursors, effective vaporization, and uniform mixtures of precursors with a transfer gas.
In accordance with an aspect of the present invention, there is provided a vaporizer for a thin film deposition apparatus, comprising a primary body, which has an inner space and includes a transfer gas inlet pipe through which a transfer gas is supplied, a mixed gas outlet pipe through which a mixed gas is exhausted, and a first heater installed in the primary body to heat the inner space; and one or more jet units, which are installed on sides of the primary body to jet precursors into the primary body. Each of the jet units includes a pipe body, which is connected to a precursor inlet pipe through which precursors are supplied, a solenoid valve, which is installed in the pipe body and selectively opens/closes off a jet nozzle installed toward the inside of the primary body in response to an external electric signal, and a cooling unit, which is installed at the outside of the pipe body.
The vaporizer for the thin film deposition apparatus further comprises a shower nozzle, which is installed close to the transfer gas inlet pipe in the primary body and includes a plurality of holes. The show nozzle is used to uniformly distribute the transfer gas in the primary body.
The vaporizer for the thin film deposition apparatus further comprises a second heater, which is installed at the center of the primary body to heat supplied precursors, and a sensor, which measures a temperature in the primary body and generates a signal for controlling the first heater and/or the second heater.
The vaporizer for the thin film deposition apparatus further comprises an insulator which is wrapped around the outside of the primary body.
The primary body has a cylindrical shape or a polygonal shape.
The bottom of the primary body has a conic shape such that a mixed gas of a precursor with a transfer gas smoothly flows through the primary body.
Brief Description of the Drawings FIG. 1 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a first embodiment of the present invention;
FIG. 2 is a perspective view of a shower nozzle as shown in FIG. 1 ;
FIG. 3 is a partial top sectional view of the vaporizer as shown in FIG. 1 ;
FIG. 4 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a second embodiment of the present invention;
FIG. 5 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a third embodiment of the present invention;
FIG. 6 is a partial top sectional view of the vaporizer as shown in • FIG. 5; and
FIG. 7 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a fourth embodiment of the present invention.
Best mode for carrying out the Invention
Hereinafter, the present invention will now be described more fully with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. In different embodiments, the same reference numerals represent the same elements. FIG. 1 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a first embodiment of the present invention. FIG. 2 is a perspective view of a shower nozzle as shown in FIG. 1. Also, FIG. 3 is a partial top sectional view of the vaporizer as shown in FIG. 1. According to the first embodiment of the present invention, a vaporizer comprises a primary body 10, which has an inner space, and a first jet unit 20 and a second jet unit 30, which are symmetrically installed with respect to the primary body 10.
The primary body 10, in which a precursor and a transfer gas will be mixed, includes a transfer gas inlet pipe 11 , which is installed at the top of the primary body 10 and through which a transfer gas is supplied, and a mixed gas outlet pipe 12, which is installed at the bottom of the primary body 10 and through which a mixed gas is exhausted.. The exhausted mixed gas is supplied to a reaction chamber (not shown).
A shower nozzle 13 is installed in the primary body 10 so that the supplied transfer gas can be uniformly distributed. As shown in FIG. 3, the shower nozzle 13 has a cylindrical shape and includes a plurality of holes 13a therein. The shower nozzle 13 allows a transfer gas to be uniformly distributed in the primary body 10 so that the transfer gas can be uniformly mixed with liquid precursors that will be jetted from the first jet unit 20 and the second jet unit 30.
A first heater 14 is installed in the primary body 10 to heat the inside of the primary body. The first heater 14 covers the inside of the primary body 10 and heats a precursor supplied to the primary body 10.
An insulator 15 is installed at the outside of the primary body 10. The insulator 15 is wrapped around the outside of the primary body 10 and prevents the passage of heat into or out of the primary body 10.
The inner bottom of the primary body 10 has a conic shape such that a mixed gas of a precursor with a transfer gas smoothly flows through the primary body 10. Thus, the mixed gas of the precursor with the transfer gas does not pile up in the primary body 10 but can be effectively exhausted through the conic bottom of the primary body 10.
Although, in the present embodiment, the primary body 10 has a conic shape, it is also possible to form a primary body in the shape of a cylinder or a polygon. For example, the primary body 10 may be formed in the shape of a triangular pillar, a square pillar, a pentagonal pillar, or a hexagonal pillar. The present embodiment adopts two jet units, i.e., the first jet unit 20 and the second jet unit 30, each of which is used to jet a different precursor into the primary body 10. Each of the jet units 20 and 30 includes a pipe body, a solenoid valve installed in the pipe body, and a cooling unit installed at the outside of the pipe body. That is, the jet units of the present embodiment include first and second pipe bodies, first and second solenoid valves, and first and second cooling units. In the present invention, the jet units employ electrically operated solenoid valves. However, it is also possible to use well-known air valves or hydraulic valves.
The first jet unit 20 includes a first pipe body 21 installed at one side of the primary body 10, a first solenoid valve 22, which is installed in the first pipe body 21 and controlled by an external electric signal, and a first cooling unit 23 installed at the outside of the first pipe body 21. Here, a first jet nozzle 22a is installed at one side of the first solenoid valve 22 toward the inside of the primary body 10.
The first pipe body 21 is connected to a first precursor inlet pipe 21a through which a precursor is supplied. The first solenoid valve 22, a known solenoid valve, is used to selectively open/close off the first jet nozzle 22a in response to an electric signal.
The first cooling unit 23 prevents a temperature increase in the first jet unit, more specifically, in the first solenoid valve 22 due to heat supplied from the primary body 10. In the present embodiment, the first jet unit 20 includes a cooling path, which may be wrapped around or place outside the first pipe body 21 and through which cooling water or cooling air flows. The first cooling unit 23 cools the first jet unit 20 to minimize change in quality of a precursor due to heat transmission from the primary body 10.
Meanwhile, a plurality of O-rings 24 may be included to prevent gas in the primary body 10 from flowing backward to the first jet unit 20 or to prevent an external gas from flowing into the primary body 10 and the first precursor inlet pipe 21a. The O-rings 24 may be installed between the first pipe body 21 and the first solenoid valve 22 or between the primary body 10 and the first jet unit 20.
The second jet unit 30 is almost similar to the first jet unit 20. That is, the second jet unit 30 includes a second pipe body 31 installed at the other side of the primary body 10, a second solenoid valve 32 installed in the second pipe body 31 , and a second cooling unit 33 installed at the outside of the second pipe body 31. A second jet nozzle 32a is mounted at one side of the second solenoid valve 32 toward the inside of the primary body 10. Also, the second pipe body 31 is connected to a second precursor inlet pipe 31a through which a precursor is supplied. Since the configuration of the second jet unit 30 is almost similar to that of the first jet unit 20, a detailed description will be omitted here. Each jet unit can jet a different precursor into the primary body 10 to obtain a desired mixture of precursors.
The dimension of the vaporizer is determined in consideration of the amounts of precursors jetted from jet nozzles, jet pressures of the precursors, and suction pressures of the precursors into the reaction chamber. If the vaporizer includes a plurality of jet units, the dimension of the vaporizer is adjusted so as to avoid interferences between jetted precursors.
For example, depending on whether a thin film is formed of a multiple system thin film, such as AxBxCx, or a multi-layered thin film, such as AχBχ/CχDχ, the dimension of the vaporizer should be changed. In a case where a thin film is formed of a multiple system thin film, such as AxBxCx, and the dimension of a vaporizer is too large, two precursors cannot be uniformly mixed in the vaporizer or a reaction chamber. On the other hand, when a multi-layered thin film, such as AχBx/CχDx, is deposited, and the dimension of a vaporizer is too small, one jet nozzle may be contaminated by a precursor jetted from another jet nozzle. Thus, different thin films having desired compositions cannot be obtained. Therefore, the dimension of a vaporizer should be changed according to the thin film type.
The operation of the vaporizer for the thin film deposition apparatus according to the present invention will be described hereinafter.
A transfer gas is supplied through the transfer gas inlet pipe 11 , flows through the shower nozzle 13, and is uniformly distributed in the primary body 10. A precursor flows into the first jet unit 20 or the second jet unit 30, is jetted into the primary body 10 by the jet nozzle 22a or 32a, and is uniformly mixed with the transfer gas. Afterwards, a continuously supplied transfer gas allows a mixed gas of the transfer gas with the precursor to flow through the mixed gas outlet pipe 12 into the reaction chamber. Here, since it is possible to precisely control using electricity the solenoid valves 22 and 32 of the first and second jet units 20 and 30, the amounts of the precursors supplied to the primary body 10 can be precisely adjusted.
FIG. 4 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a second embodiment of the present invention. Unlike in the first embodiment, the second embodiment uses 3 jet units. The 3 jet units, i.e., a first jet unit 20, a second jet unit 30, and a third jet unit 40, are symmetrically installed with respect to a primary body 10.
The first, second, and third jet units 20, 30, and 40 include first, second, and third pipe bodies 21 , 31 , and 41 , which are symmetrically installed with respect to the primary body 10; first, second, and third solenoid valves 22, 32, and 42, which are respectively installed in the first, second, and third pipe bodies 21 , 31 , and 41 ; and first, second, and third cooling units 23, 33, and 43, which are respectively installed at the outside of the first, second, and third pipe bodies 21 , 31 , and 41. First, second, and third jet nozzles 22a, 32a, and 33a are mounted at one side of the first, second, and third solenoid valves 22, 32, and 42, respectively. Also, the first, second, and third pipe bodies 21 , 31 , and 41 are coupled to first, second, and third precursor inlet pipes 21a, 31a, and 41 a, respectively, through which respective precursors are supplied. Since the configuration of the vaporizer is almost similar to that in the first embodiment, a detailed description will be omitted here.
FIG. 5 is a lateral sectional view of a vaporizer for a thin film deposition apparatus according to a third embodiment of the present invention. FIG. 6 is a partial top sectional view of the vaporizer as shown in FIG. 5. Unlike in the first embodiment, a primary body 10 of the third embodiment further comprises a second heater .16 independent of a first heater 14 and a sensor 17 capable of measuring temperature in a primary body 10. The second heater 16 is installed at the center of the primary body 10. The second heater 16 operates independent of the first heater 14 or in synchrony with the first heater 14 and instantly heats a precursor supplied to the primary body 10. Before being supplied to a reaction chamber, a liquid precursor used in CVD or ALD should reach the highest possible atmospheric pressure in the vaporizer. For the liquid precursor to reach the highest possible atmospheric pressure, a very high energy must be instantly applied to the jetted precursor. Accordingly, the second heater 16, in addition to the first heater 14, is installed so that the inside of the primary body 10 can be maintained at a constant temperature and a sufficient energy can be applied to the precursor. Meanwhile, the sensor 17 is used to precisely measure a temperature in the primary body 10 and generates a signal for controlling operations of the first and second heaters 14 and 16.
FIG. 7 is a partial top sectional view of a vaporizer for a thin film deposition apparatus according to a fourth embodiment of the present invention. As shown in FIG. 7, unlike in the third embodiment, the fourth embodiment uses 3 jet units, i.e., a first jet unit 20, a second jet unit 30, and a third jet unit 40, which are symmetrically installed with respect to a primary body 10.
Although the first through fourth embodiments adopt 2 or 3 jet units, a vaporizer may include one or more jet units. The vaporizer of the present invention can be used in a CVD apparatus or an ALD apparatus and in any system requiring the improved endurance, uniform film deposition, and improved efficiency due to temperature-controlled surface. The vaporizer can be used not only in many other electric devices but also to deposit one or more insulators, dielectric materials, or conductive materials.
While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Industrial Applicability
According to the present invention as described above, a primary body of a vaporizer includes a plurality of jet units, which can be instantly controlled using electric signals. > Thus, the amounts of precursors supplied from the jet units can be precisely adjusted and uniformly mixed with a transfer gas. Consequently, if the vaporizer is used in a thin film deposition apparatus, a multiple system thin film or a multi-layered thin film having a uniform degree of purity can be effectively deposited.

Claims

What is claimed is:
1. A vaporizer for a thin film deposition apparatus, comprising: a primary body, which has an inner space and includes a transfer gas inlet pipe through which a transfer gas is supplied, a mixed gas outlet pipe through which a mixed gas is exhausted, and a first heater installed in the primary body to heat the inner space; and one or more jet units, which are installed on sides of the primary body to jet precursors into the primary body.
2. The vaporizer of claim 1 , wherein each of the jet units includes: a pipe body, which is connected to a precursor inlet pipe through which precursors are supplied; a solenoid valve, which is installed in the pipe body and selectively opens/closes off a jet nozzle installed toward the inside of the primary body in response to an external electric signal; and a cooling unit, which is installed at the outside of the pipe body.
3. The vaporizer of claim 1 or 2, further comprising a shower nozzle, which is installed close to the transfer gas inlet pipe in the primary body and includes a plurality holes to uniformly distribute the transfer gas in the primary body.
4. The vaporizer of claim 1 or 2, further comprising: a second heater, which is installed at the center of the primary body to heat supplied precursors; and a sensor, which measures a temperature in the primary body and generates a signal for controlling the first heater and/or the second heater.
The vaporizer of claim 1 or 2, further comprising an insulator, which is wrapped around the outside of the primary body.
6. The vaporizer of claim 1 or 2, wherein the primary body has a cylindrical shape or a polygonal shape.
7. The vaporizer of claim 1 or 2, wherein the bottom of the primary body has a conic shape such that a mixed gas of a precursor with a transfer gas smoothly flows through the primary body.
PCT/KR2003/001392 2002-07-18 2003-07-14 Vaporizer for thin film deposition apparatus WO2004009868A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003281548A AU2003281548A1 (en) 2002-07-18 2003-07-14 Vaporizer for thin film deposition apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0041980 2002-07-18
KR10-2002-0041980A KR100474970B1 (en) 2002-07-18 2002-07-18 Vaporize for thin film deposition apparatus

Publications (1)

Publication Number Publication Date
WO2004009868A1 true WO2004009868A1 (en) 2004-01-29

Family

ID=30768133

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2003/001392 WO2004009868A1 (en) 2002-07-18 2003-07-14 Vaporizer for thin film deposition apparatus

Country Status (4)

Country Link
KR (1) KR100474970B1 (en)
AU (1) AU2003281548A1 (en)
TW (1) TWI222676B (en)
WO (1) WO2004009868A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005112081A1 (en) * 2004-04-08 2005-11-24 Sebine Technology, Inc. Vaporizer with integral diaphragm
WO2016000944A1 (en) * 2014-07-01 2016-01-07 Aixtron Se Device and method for generating vapor for a cvd- or pvd device from multiple liquid or solid source materials

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101104632B1 (en) * 2010-04-06 2012-01-12 주식회사 마이크로이즈 Vaporizer and System for Depositing Thin Film
KR102553047B1 (en) * 2020-08-28 2023-07-11 (주)지오엘리먼트 Cyclon-type vaporizer
KR102686053B1 (en) * 2023-12-26 2024-07-17 주식회사에이에스케이 Heat exchanger for vaporization device for thin film deposition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0557146A (en) * 1991-09-02 1993-03-09 Mitsubishi Heavy Ind Ltd Flue-gas denitration equipment
US5595603A (en) * 1994-02-22 1997-01-21 Osram Sylvania Inc. Apparatus for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
US5835678A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US6296711B1 (en) * 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664289B1 (en) * 1990-07-05 1995-09-22 Commissariat Energie Atomique MICROBIOLOGICAL METHOD FOR DETECTION OF MINERAL OR ORGANIC TOXIC PRODUCTS USING SACCHAROMYCE YEAST STRAINS.
US5835677A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US6210485B1 (en) * 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
KR100406175B1 (en) * 2000-06-15 2003-11-19 주식회사 하이닉스반도체 Apparatus for supplying a liquid raw materials and a method of forming a copper layer using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0557146A (en) * 1991-09-02 1993-03-09 Mitsubishi Heavy Ind Ltd Flue-gas denitration equipment
US5595603A (en) * 1994-02-22 1997-01-21 Osram Sylvania Inc. Apparatus for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
US5835678A (en) * 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US6296711B1 (en) * 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005112081A1 (en) * 2004-04-08 2005-11-24 Sebine Technology, Inc. Vaporizer with integral diaphragm
WO2016000944A1 (en) * 2014-07-01 2016-01-07 Aixtron Se Device and method for generating vapor for a cvd- or pvd device from multiple liquid or solid source materials
CN106661718A (en) * 2014-07-01 2017-05-10 艾克斯特朗欧洲公司 Device and method for generating vapor for a CVD or PVD device from multiple liquid or solid source materials
US10060022B2 (en) 2014-07-01 2018-08-28 Aixtron Se Device and method for generating a vapor for a CVD or PVD device from multiple liquid or solid source materials

Also Published As

Publication number Publication date
AU2003281548A1 (en) 2004-02-09
TWI222676B (en) 2004-10-21
KR20040008355A (en) 2004-01-31
TW200402094A (en) 2004-02-01
KR100474970B1 (en) 2005-03-10

Similar Documents

Publication Publication Date Title
KR100954257B1 (en) Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
CN107148661B (en) Gas supply conveying appliance including the gas diverter controlled for adjustable air flow
JP5732025B2 (en) Material vapor deposition method and apparatus in substrate processing system
US6454860B2 (en) Deposition reactor having vaporizing, mixing and cleaning capabilities
KR20080106544A (en) Direct liquid injector device
US7246796B2 (en) Carburetor, various types of devices using the carburetor, and method of vaporization
US5832177A (en) Method for controlling apparatus for supplying steam for ashing process
KR20000000946A (en) Vaporizer and chemical vapor deposition apparatus using the same
KR100654400B1 (en) Solution-vaporization type cvd apparatus
KR20150011317A (en) Semiconductor reaction chamber with plasma capabilities
US20060169201A1 (en) Apparatus for supplying gas and apparatus for forming a layer having the same
TW201617473A (en) Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ald system
US11725278B2 (en) Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate
JP2006322074A (en) Method for chemical vapor deposition with shower head and apparatus thereof
WO2004040630A1 (en) Method for manufacturing semiconductor device and substrate processing system
US20030021595A1 (en) Apparatus and method for vaporizing a liquid chemical
WO2001099171A1 (en) Gas supply device and treating device
WO2004009868A1 (en) Vaporizer for thin film deposition apparatus
JP2004323894A (en) Gas supply stabilizer, and apparatus and method for vapor phase growth
JP2001313288A (en) Source-gas supplying device
US6115538A (en) Steam supplying apparatus and method for controlling same
KR101490438B1 (en) Vaporizer in depositing apparatus
US20120009347A1 (en) Precise temperature control for teos application by heat transfer fluid
KR100685798B1 (en) Evaporation unit for depositing thin film on wafer having the unit
KR101072532B1 (en) Apparatus for depositting thin film

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP