JP2003529662A5 - - Google Patents

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Publication number
JP2003529662A5
JP2003529662A5 JP2001572637A JP2001572637A JP2003529662A5 JP 2003529662 A5 JP2003529662 A5 JP 2003529662A5 JP 2001572637 A JP2001572637 A JP 2001572637A JP 2001572637 A JP2001572637 A JP 2001572637A JP 2003529662 A5 JP2003529662 A5 JP 2003529662A5
Authority
JP
Japan
Prior art keywords
abrasive
silica particles
weight
size
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001572637A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003529662A (ja
Filing date
Publication date
Priority claimed from DE10063870A external-priority patent/DE10063870A1/de
Application filed filed Critical
Priority claimed from PCT/EP2001/003113 external-priority patent/WO2001074958A2/de
Publication of JP2003529662A publication Critical patent/JP2003529662A/ja
Publication of JP2003529662A5 publication Critical patent/JP2003529662A5/ja
Pending legal-status Critical Current

Links

JP2001572637A 2000-03-31 2001-03-19 研磨剤ならびに平面層の製造法 Pending JP2003529662A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10016020.4 2000-03-31
DE10016020 2000-03-31
DE10063870.8 2000-12-21
DE10063870A DE10063870A1 (de) 2000-03-31 2000-12-21 Poliermittel und Verfahren zur Herstellung planarer Schichten
PCT/EP2001/003113 WO2001074958A2 (de) 2000-03-31 2001-03-19 Poliermittel und verfahren zur herstellung planarer schichten

Publications (2)

Publication Number Publication Date
JP2003529662A JP2003529662A (ja) 2003-10-07
JP2003529662A5 true JP2003529662A5 (enExample) 2008-06-19

Family

ID=26005114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001572637A Pending JP2003529662A (ja) 2000-03-31 2001-03-19 研磨剤ならびに平面層の製造法

Country Status (9)

Country Link
US (1) US20030061766A1 (enExample)
EP (1) EP1274807B1 (enExample)
JP (1) JP2003529662A (enExample)
CN (1) CN1240797C (enExample)
AT (1) ATE302830T1 (enExample)
AU (1) AU2001256208A1 (enExample)
IL (1) IL151794A0 (enExample)
TW (1) TW526250B (enExample)
WO (1) WO2001074958A2 (enExample)

Families Citing this family (44)

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DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
US6884144B2 (en) 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US20050056810A1 (en) * 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
JPWO2005029563A1 (ja) * 2003-09-24 2007-11-15 日本化学工業株式会社 シリコンウエハ研磨用組成物および研磨方法
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
JP4291665B2 (ja) * 2003-10-15 2009-07-08 日本化学工業株式会社 珪酸質材料用研磨剤組成物およびそれを用いた研磨方法
US7470295B2 (en) * 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
DE602005023557D1 (de) * 2004-04-12 2010-10-28 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20100146864A1 (en) * 2005-08-10 2010-06-17 Catalysts & Chemicals Industries Co., Ltd Nodular Silica Sol and Method of Producing the Same
CN1955249B (zh) * 2005-10-28 2012-07-25 安集微电子（上海）有限公司 用于钽阻挡层的化学机械抛光浆料
JP4963825B2 (ja) * 2005-11-16 2012-06-27 日揮触媒化成株式会社 研磨用シリカゾルおよびそれを含有してなる研磨用組成物
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP5289687B2 (ja) * 2006-06-22 2013-09-11 株式会社アドマテックス 研磨材用砥粒及びその製造方法、並びに研磨材
DE102006046619A1 (de) * 2006-09-29 2008-04-03 Heraeus Quarzglas Gmbh & Co. Kg Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
KR101418626B1 (ko) * 2007-02-27 2014-07-14 히타치가세이가부시끼가이샤 금속용 연마액 및 연마방법
JP5329786B2 (ja) * 2007-08-31 2013-10-30 株式会社東芝 研磨液および半導体装置の製造方法
PT103838B (pt) * 2007-09-28 2008-11-03 Cuf Companhia Uniao Fabril Sgp Óxidos cerâmicos esféricos nanocristalinos, processo para a sua síntese e respectivas utilizações
JP5236283B2 (ja) * 2007-12-28 2013-07-17 花王株式会社 ハードディスク基板用研磨液組成物
WO2010052983A1 (ja) * 2008-11-10 2010-05-14 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
CN101838503B (zh) * 2010-02-26 2014-06-25 佛山市柯林瓷砖护理用品有限公司 抛光砖、石材、人造石翻新用抛光剂
CN102533117A (zh) * 2010-12-13 2012-07-04 安集微电子（上海）有限公司 一种用于3d封装tsv硅抛光的化学机械抛光液
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
WO2013069623A1 (ja) 2011-11-08 2013-05-16 株式会社 フジミインコーポレーテッド 研磨用組成物
WO2013077369A1 (ja) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
KR101480179B1 (ko) * 2011-12-30 2015-01-09 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR20150014924A (ko) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
CN102796460B (zh) * 2012-08-31 2014-05-07 安特迪（天津）科技有限公司 一种二氧化硅基cmp抛光液及其制备方法
ES2712802T3 (es) * 2013-04-17 2019-05-14 Silbond Corp Método de preparación de un sol de sílice
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP6316680B2 (ja) * 2014-06-30 2018-04-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP2016155900A (ja) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法及び硬脆材料基板の製造方法
JP6436018B2 (ja) * 2015-08-28 2018-12-12 住友金属鉱山株式会社 酸化物単結晶基板の研磨スラリー及びその製造方法
WO2019234650A1 (en) * 2018-06-08 2019-12-12 Robin Duncan Kirkpatrick Process and equipment assembly for beneficiation of coal discards
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN115116842B (zh) * 2022-02-19 2024-10-29 上海钧乾智造科技有限公司 含全氟取代基的聚乙烯胺共聚物在单晶硅片碱抛光中的应用

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
EP0773270B1 (en) * 1995-11-10 2001-01-24 Tokuyama Corporation Polishing slurries and a process for the production thereof
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
JP4105838B2 (ja) * 1999-03-31 2008-06-25 株式会社トクヤマ 研磨剤及び研磨方法
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces

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