JP2006156825A5 - - Google Patents
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- Publication number
- JP2006156825A5 JP2006156825A5 JP2004347220A JP2004347220A JP2006156825A5 JP 2006156825 A5 JP2006156825 A5 JP 2006156825A5 JP 2004347220 A JP2004347220 A JP 2004347220A JP 2004347220 A JP2004347220 A JP 2004347220A JP 2006156825 A5 JP2006156825 A5 JP 2006156825A5
- Authority
- JP
- Japan
- Prior art keywords
- ceria particles
- dihydroxyethyl glycine
- polishing
- dihydroxyethylglycine
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 4
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 claims 3
- 238000005498 polishing Methods 0.000 claims 2
- 239000012736 aqueous medium Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004347220A JP4027929B2 (ja) | 2004-11-30 | 2004-11-30 | 半導体基板用研磨液組成物 |
| US11/262,852 US20060113283A1 (en) | 2004-11-30 | 2005-11-01 | Polishing composition for a semiconductor substrate |
| TW094139776A TWI414588B (zh) | 2004-11-30 | 2005-11-11 | 半導體基板用研磨液組合物 |
| CN2005101253821A CN1782013B (zh) | 2004-11-30 | 2005-11-16 | 半导体基板用研磨液组合物 |
| KR1020050115307A KR101150549B1 (ko) | 2004-11-30 | 2005-11-30 | 반도체 기판용 연마액 조성물 |
| US12/406,440 US8058172B2 (en) | 2004-11-30 | 2009-03-18 | Polishing process of a semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004347220A JP4027929B2 (ja) | 2004-11-30 | 2004-11-30 | 半導体基板用研磨液組成物 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007067289A Division JP2007227943A (ja) | 2007-03-15 | 2007-03-15 | 半導体基板用研磨液組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006156825A JP2006156825A (ja) | 2006-06-15 |
| JP2006156825A5 true JP2006156825A5 (enExample) | 2007-01-25 |
| JP4027929B2 JP4027929B2 (ja) | 2007-12-26 |
Family
ID=36566414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004347220A Expired - Fee Related JP4027929B2 (ja) | 2004-11-30 | 2004-11-30 | 半導体基板用研磨液組成物 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20060113283A1 (enExample) |
| JP (1) | JP4027929B2 (enExample) |
| KR (1) | KR101150549B1 (enExample) |
| CN (1) | CN1782013B (enExample) |
| TW (1) | TWI414588B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723234B2 (en) * | 2006-11-22 | 2010-05-25 | Clarkson University | Method for selective CMP of polysilicon |
| WO2008081943A1 (ja) | 2006-12-28 | 2008-07-10 | Kao Corporation | 研磨液組成物 |
| JP5403909B2 (ja) * | 2007-04-05 | 2014-01-29 | 花王株式会社 | 研磨液組成物 |
| JP5403910B2 (ja) * | 2007-04-23 | 2014-01-29 | 花王株式会社 | 研磨液組成物 |
| JP5403956B2 (ja) * | 2008-07-01 | 2014-01-29 | 花王株式会社 | 研磨液組成物 |
| JP5403957B2 (ja) * | 2008-07-01 | 2014-01-29 | 花王株式会社 | 研磨液組成物 |
| US8648324B2 (en) * | 2010-03-19 | 2014-02-11 | International Business Machines Corporation | Glassy carbon nanostructures |
| CN102533122B (zh) * | 2010-12-28 | 2016-01-20 | 安集微电子（上海）有限公司 | 一种用于抛光含钛基材的抛光浆料 |
| KR20140122271A (ko) * | 2012-02-10 | 2014-10-17 | 바스프 에스이 | 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물 |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| KR101396252B1 (ko) * | 2012-06-20 | 2014-05-19 | 주식회사 케이씨텍 | 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법 |
| KR101406760B1 (ko) * | 2012-11-07 | 2014-06-19 | 주식회사 케이씨텍 | 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법 |
| US20150376464A1 (en) * | 2013-02-13 | 2015-12-31 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and method for producing polished article |
| KR101833219B1 (ko) * | 2016-08-05 | 2018-04-13 | 주식회사 케이씨텍 | 텅스텐 베리어층 연마용 슬러리 조성물 |
| JP6916192B2 (ja) * | 2016-09-23 | 2021-08-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法 |
| KR20210076571A (ko) * | 2019-12-16 | 2021-06-24 | 주식회사 케이씨텍 | Sti 공정용 연마 슬러리 조성물 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE445230T1 (de) * | 1997-04-30 | 2009-10-15 | Minnesota Mining & Mfg | Verfahren zum planarisieren der oberfläche eines halbleiterwafers |
| TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
| US6136714A (en) * | 1998-12-17 | 2000-10-24 | Siemens Aktiengesellschaft | Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor |
| US6783434B1 (en) * | 1998-12-25 | 2004-08-31 | Hitachi Chemical Company, Ltd. | CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate |
| AU1804300A (en) * | 1998-12-28 | 2000-07-31 | Hitachi Chemical Company, Ltd. | Materials for polishing liquid for metal, polishing liquid for metal, method forpreparation thereof and polishing method using the same |
| JP2000237952A (ja) * | 1999-02-19 | 2000-09-05 | Hitachi Ltd | 研磨装置および半導体装置の製造方法 |
| US6527817B1 (en) * | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| JP2003257910A (ja) * | 2001-12-28 | 2003-09-12 | Fujikoshi Mach Corp | 基板における銅層の研磨方法 |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP4430331B2 (ja) | 2003-05-07 | 2010-03-10 | ニッタ・ハース株式会社 | 半導体ウェハ研磨用組成物 |
| US20050076579A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Bicine/tricine containing composition and method for chemical-mechanical planarization |
| KR20070041330A (ko) * | 2005-10-14 | 2007-04-18 | 가오가부시끼가이샤 | 반도체 기판용 연마액 조성물 |
-
2004
- 2004-11-30 JP JP2004347220A patent/JP4027929B2/ja not_active Expired - Fee Related
-
2005
- 2005-11-01 US US11/262,852 patent/US20060113283A1/en not_active Abandoned
- 2005-11-11 TW TW094139776A patent/TWI414588B/zh not_active IP Right Cessation
- 2005-11-16 CN CN2005101253821A patent/CN1782013B/zh not_active Expired - Fee Related
- 2005-11-30 KR KR1020050115307A patent/KR101150549B1/ko not_active Expired - Fee Related
-
2009
- 2009-03-18 US US12/406,440 patent/US8058172B2/en not_active Expired - Fee Related