JP4027929B2 - 半導体基板用研磨液組成物 - Google Patents

半導体基板用研磨液組成物 Download PDF

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Publication number
JP4027929B2
JP4027929B2 JP2004347220A JP2004347220A JP4027929B2 JP 4027929 B2 JP4027929 B2 JP 4027929B2 JP 2004347220 A JP2004347220 A JP 2004347220A JP 2004347220 A JP2004347220 A JP 2004347220A JP 4027929 B2 JP4027929 B2 JP 4027929B2
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JP
Japan
Prior art keywords
polishing
semiconductor substrate
weight
ceria particles
liquid composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004347220A
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English (en)
Japanese (ja)
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JP2006156825A5 (enExample
JP2006156825A (ja
Inventor
康洋 米田
真美 代田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Priority to JP2004347220A priority Critical patent/JP4027929B2/ja
Priority to US11/262,852 priority patent/US20060113283A1/en
Priority to TW094139776A priority patent/TWI414588B/zh
Priority to CN2005101253821A priority patent/CN1782013B/zh
Priority to KR1020050115307A priority patent/KR101150549B1/ko
Publication of JP2006156825A publication Critical patent/JP2006156825A/ja
Publication of JP2006156825A5 publication Critical patent/JP2006156825A5/ja
Application granted granted Critical
Publication of JP4027929B2 publication Critical patent/JP4027929B2/ja
Priority to US12/406,440 priority patent/US8058172B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2004347220A 2004-11-30 2004-11-30 半導体基板用研磨液組成物 Expired - Fee Related JP4027929B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物
US11/262,852 US20060113283A1 (en) 2004-11-30 2005-11-01 Polishing composition for a semiconductor substrate
TW094139776A TWI414588B (zh) 2004-11-30 2005-11-11 半導體基板用研磨液組合物
CN2005101253821A CN1782013B (zh) 2004-11-30 2005-11-16 半导体基板用研磨液组合物
KR1020050115307A KR101150549B1 (ko) 2004-11-30 2005-11-30 반도체 기판용 연마액 조성물
US12/406,440 US8058172B2 (en) 2004-11-30 2009-03-18 Polishing process of a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007067289A Division JP2007227943A (ja) 2007-03-15 2007-03-15 半導体基板用研磨液組成物

Publications (3)

Publication Number Publication Date
JP2006156825A JP2006156825A (ja) 2006-06-15
JP2006156825A5 JP2006156825A5 (enExample) 2007-01-25
JP4027929B2 true JP4027929B2 (ja) 2007-12-26

Family

ID=36566414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004347220A Expired - Fee Related JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Country Status (5)

Country Link
US (2) US20060113283A1 (enExample)
JP (1) JP4027929B2 (enExample)
KR (1) KR101150549B1 (enExample)
CN (1) CN1782013B (enExample)
TW (1) TWI414588B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
US8357311B2 (en) 2006-12-28 2013-01-22 Kao Corporation Polishing liquid composition
JP5403909B2 (ja) * 2007-04-05 2014-01-29 花王株式会社 研磨液組成物
JP5403910B2 (ja) * 2007-04-23 2014-01-29 花王株式会社 研磨液組成物
JP5403956B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
JP5403957B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US8648324B2 (en) * 2010-03-19 2014-02-11 International Business Machines Corporation Glassy carbon nanostructures
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
KR20140122271A (ko) * 2012-02-10 2014-10-17 바스프 에스이 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
KR101396252B1 (ko) * 2012-06-20 2014-05-19 주식회사 케이씨텍 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
KR101406760B1 (ko) * 2012-11-07 2014-06-19 주식회사 케이씨텍 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
EP2957613B1 (en) * 2013-02-13 2020-11-18 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523395A (ja) * 1997-04-30 2001-11-20 ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー 半導体ウェーハの上面を平坦化する方法
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
EP1566421B1 (en) * 1998-12-25 2014-12-10 Hitachi Chemical Company, Ltd. CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate.
KR100463315B1 (ko) * 1998-12-28 2005-01-07 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
JP2000237952A (ja) * 1999-02-19 2000-09-05 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP4430331B2 (ja) 2003-05-07 2010-03-10 ニッタ・ハース株式会社 半導体ウェハ研磨用組成物
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물

Also Published As

Publication number Publication date
TW200621965A (en) 2006-07-01
CN1782013B (zh) 2010-05-05
JP2006156825A (ja) 2006-06-15
US20090181541A1 (en) 2009-07-16
TWI414588B (zh) 2013-11-11
CN1782013A (zh) 2006-06-07
KR101150549B1 (ko) 2012-05-30
US8058172B2 (en) 2011-11-15
KR20060060616A (ko) 2006-06-05
US20060113283A1 (en) 2006-06-01

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