CN1782013B - 半导体基板用研磨液组合物 - Google Patents

半导体基板用研磨液组合物 Download PDF

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Publication number
CN1782013B
CN1782013B CN2005101253821A CN200510125382A CN1782013B CN 1782013 B CN1782013 B CN 1782013B CN 2005101253821 A CN2005101253821 A CN 2005101253821A CN 200510125382 A CN200510125382 A CN 200510125382A CN 1782013 B CN1782013 B CN 1782013B
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CN
China
Prior art keywords
polishing
liquid composition
semiconductor substrate
polishing liquid
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005101253821A
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English (en)
Chinese (zh)
Other versions
CN1782013A (zh
Inventor
米田康洋
代田真美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
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Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of CN1782013A publication Critical patent/CN1782013A/zh
Application granted granted Critical
Publication of CN1782013B publication Critical patent/CN1782013B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2005101253821A 2004-11-30 2005-11-16 半导体基板用研磨液组合物 Expired - Fee Related CN1782013B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物
JP347220/2004 2004-11-30

Publications (2)

Publication Number Publication Date
CN1782013A CN1782013A (zh) 2006-06-07
CN1782013B true CN1782013B (zh) 2010-05-05

Family

ID=36566414

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005101253821A Expired - Fee Related CN1782013B (zh) 2004-11-30 2005-11-16 半导体基板用研磨液组合物

Country Status (5)

Country Link
US (2) US20060113283A1 (enExample)
JP (1) JP4027929B2 (enExample)
KR (1) KR101150549B1 (enExample)
CN (1) CN1782013B (enExample)
TW (1) TWI414588B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
US8357311B2 (en) 2006-12-28 2013-01-22 Kao Corporation Polishing liquid composition
JP5403909B2 (ja) * 2007-04-05 2014-01-29 花王株式会社 研磨液組成物
JP5403910B2 (ja) * 2007-04-23 2014-01-29 花王株式会社 研磨液組成物
JP5403957B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
JP5403956B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US8648324B2 (en) * 2010-03-19 2014-02-11 International Business Machines Corporation Glassy carbon nanostructures
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
KR20140122271A (ko) 2012-02-10 2014-10-17 바스프 에스이 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
KR101396252B1 (ko) * 2012-06-20 2014-05-19 주식회사 케이씨텍 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
KR101406760B1 (ko) * 2012-11-07 2014-06-19 주식회사 케이씨텍 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
SG11201506001VA (en) * 2013-02-13 2015-09-29 Fujimi Inc Polishing composition, method for producing polishing composition and method for producing polished article
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
JP6916192B2 (ja) * 2016-09-23 2021-08-11 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1254441A (zh) * 1997-04-30 2000-05-24 美国3M公司 对半导体晶片表面进行平整的方法
CN1334961A (zh) * 1998-12-28 2002-02-06 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
CN1399668A (zh) * 1999-11-15 2003-02-26 卡伯特微电子公司 平整表面的组合物及方法
US20040006924A1 (en) * 2002-02-11 2004-01-15 Scott Brandon Shane Free radical-forming activator attached to solid and used to enhance CMP formulations
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
EP1566421B1 (en) * 1998-12-25 2014-12-10 Hitachi Chemical Company, Ltd. CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate.
JP2000237952A (ja) * 1999-02-19 2000-09-05 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
JP4430331B2 (ja) 2003-05-07 2010-03-10 ニッタ・ハース株式会社 半導体ウェハ研磨用組成物
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1254441A (zh) * 1997-04-30 2000-05-24 美国3M公司 对半导体晶片表面进行平整的方法
CN1334961A (zh) * 1998-12-28 2002-02-06 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
CN1399668A (zh) * 1999-11-15 2003-02-26 卡伯特微电子公司 平整表面的组合物及方法
US20040006924A1 (en) * 2002-02-11 2004-01-15 Scott Brandon Shane Free radical-forming activator attached to solid and used to enhance CMP formulations
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Also Published As

Publication number Publication date
JP4027929B2 (ja) 2007-12-26
KR20060060616A (ko) 2006-06-05
TW200621965A (en) 2006-07-01
CN1782013A (zh) 2006-06-07
TWI414588B (zh) 2013-11-11
JP2006156825A (ja) 2006-06-15
KR101150549B1 (ko) 2012-05-30
US20090181541A1 (en) 2009-07-16
US20060113283A1 (en) 2006-06-01
US8058172B2 (en) 2011-11-15

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Granted publication date: 20100505

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CF01 Termination of patent right due to non-payment of annual fee