JP2006156825A5 - - Google Patents

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Publication number
JP2006156825A5
JP2006156825A5 JP2004347220A JP2004347220A JP2006156825A5 JP 2006156825 A5 JP2006156825 A5 JP 2006156825A5 JP 2004347220 A JP2004347220 A JP 2004347220A JP 2004347220 A JP2004347220 A JP 2004347220A JP 2006156825 A5 JP2006156825 A5 JP 2006156825A5
Authority
JP
Japan
Prior art keywords
ceria particles
dihydroxyethyl glycine
polishing
dihydroxyethylglycine
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004347220A
Other languages
English (en)
Other versions
JP2006156825A (ja
JP4027929B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004347220A external-priority patent/JP4027929B2/ja
Priority to JP2004347220A priority Critical patent/JP4027929B2/ja
Priority to US11/262,852 priority patent/US20060113283A1/en
Priority to TW094139776A priority patent/TWI414588B/zh
Priority to CN2005101253821A priority patent/CN1782013B/zh
Priority to KR1020050115307A priority patent/KR101150549B1/ko
Publication of JP2006156825A publication Critical patent/JP2006156825A/ja
Publication of JP2006156825A5 publication Critical patent/JP2006156825A5/ja
Publication of JP4027929B2 publication Critical patent/JP4027929B2/ja
Application granted granted Critical
Priority to US12/406,440 priority patent/US8058172B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (2)

  1. ジヒドロキシエチルグリシン、セリア粒子、及び水系媒体を含有してなる半導体基板用研磨液組成物であって、セリア粒子の体積平均粒子径が３０〜１０００ｎｍである研磨液組成物。
  2. ジヒドロキシエチルグリシンとセリア粒子の重量比（ジヒドロキシエチルグリシン／セリア粒子）が１／２０〜５０／１である請求項１記載の研磨液組成物。

JP2004347220A 2004-11-30 2004-11-30 半導体基板用研磨液組成物 Expired - Fee Related JP4027929B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物
US11/262,852 US20060113283A1 (en) 2004-11-30 2005-11-01 Polishing composition for a semiconductor substrate
TW094139776A TWI414588B (zh) 2004-11-30 2005-11-11 半導體基板用研磨液組合物
CN2005101253821A CN1782013B (zh) 2004-11-30 2005-11-16 半导体基板用研磨液组合物
KR1020050115307A KR101150549B1 (ko) 2004-11-30 2005-11-30 반도체 기판용 연마액 조성물
US12/406,440 US8058172B2 (en) 2004-11-30 2009-03-18 Polishing process of a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004347220A JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007067289A Division JP2007227943A (ja) 2007-03-15 2007-03-15 半導体基板用研磨液組成物

Publications (3)

Publication Number Publication Date
JP2006156825A JP2006156825A (ja) 2006-06-15
JP2006156825A5 true JP2006156825A5 (ja) 2007-01-25
JP4027929B2 JP4027929B2 (ja) 2007-12-26

Family

ID=36566414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004347220A Expired - Fee Related JP4027929B2 (ja) 2004-11-30 2004-11-30 半導体基板用研磨液組成物

Country Status (5)

Country Link
US (2) US20060113283A1 (ja)
JP (1) JP4027929B2 (ja)
KR (1) KR101150549B1 (ja)
CN (1) CN1782013B (ja)
TW (1) TWI414588B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
CN101568615B (zh) 2006-12-28 2013-02-06 花王株式会社 研磨液组合物
JP5403909B2 (ja) * 2007-04-05 2014-01-29 花王株式会社 研磨液組成物
JP5403910B2 (ja) * 2007-04-23 2014-01-29 花王株式会社 研磨液組成物
JP5403957B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
JP5403956B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US8648324B2 (en) * 2010-03-19 2014-02-11 International Business Machines Corporation Glassy carbon nanostructures
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
WO2013118015A1 (en) 2012-02-10 2013-08-15 Basf Se Chemical mechanical polishing (cmp) composition comprising a protein
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
KR101396252B1 (ko) * 2012-06-20 2014-05-19 주식회사 케이씨텍 초기 단차 제거용 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
KR101406760B1 (ko) * 2012-11-07 2014-06-19 주식회사 케이씨텍 연마 슬러리 및 이를 이용하여 기판 또는 웨이퍼를 연마하는 방법
JP5897200B2 (ja) * 2013-02-13 2016-03-30 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
JP6916192B2 (ja) * 2016-09-23 2021-08-11 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2287404C (en) * 1997-04-30 2007-10-16 David A. Kaisaki Method of planarizing the upper surface of a semiconductor wafer
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
KR100475976B1 (ko) * 1998-12-25 2005-03-15 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
TWI224128B (en) * 1998-12-28 2004-11-21 Hitachi Chemical Co Ltd Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
JP2000237952A (ja) * 1999-02-19 2000-09-05 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP4430331B2 (ja) 2003-05-07 2010-03-10 ニッタ・ハース株式会社 半導体ウェハ研磨用組成物
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물

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