IL151794A0 - Polishing agent and method for producing planar layers - Google Patents

Polishing agent and method for producing planar layers

Info

Publication number
IL151794A0
IL151794A0 IL15179401A IL15179401A IL151794A0 IL 151794 A0 IL151794 A0 IL 151794A0 IL 15179401 A IL15179401 A IL 15179401A IL 15179401 A IL15179401 A IL 15179401A IL 151794 A0 IL151794 A0 IL 151794A0
Authority
IL
Israel
Prior art keywords
particles
atoms
polishing agent
polishing
planar layers
Prior art date
Application number
IL15179401A
Other languages
English (en)
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10063870A external-priority patent/DE10063870A1/de
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of IL151794A0 publication Critical patent/IL151794A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
IL15179401A 2000-03-31 2001-03-19 Polishing agent and method for producing planar layers IL151794A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10016020 2000-03-31
DE10063870A DE10063870A1 (de) 2000-03-31 2000-12-21 Poliermittel und Verfahren zur Herstellung planarer Schichten
PCT/EP2001/003113 WO2001074958A2 (de) 2000-03-31 2001-03-19 Poliermittel und verfahren zur herstellung planarer schichten

Publications (1)

Publication Number Publication Date
IL151794A0 true IL151794A0 (en) 2003-04-10

Family

ID=26005114

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15179401A IL151794A0 (en) 2000-03-31 2001-03-19 Polishing agent and method for producing planar layers

Country Status (9)

Country Link
US (1) US20030061766A1 (enExample)
EP (1) EP1274807B1 (enExample)
JP (1) JP2003529662A (enExample)
CN (1) CN1240797C (enExample)
AT (1) ATE302830T1 (enExample)
AU (1) AU2001256208A1 (enExample)
IL (1) IL151794A0 (enExample)
TW (1) TW526250B (enExample)
WO (1) WO2001074958A2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
US6884144B2 (en) 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US20050056810A1 (en) * 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
JPWO2005029563A1 (ja) * 2003-09-24 2007-11-15 日本化学工業株式会社 シリコンウエハ研磨用組成物および研磨方法
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
JP4291665B2 (ja) * 2003-10-15 2009-07-08 日本化学工業株式会社 珪酸質材料用研磨剤組成物およびそれを用いた研磨方法
US7470295B2 (en) * 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
DE602005023557D1 (de) * 2004-04-12 2010-10-28 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20100146864A1 (en) * 2005-08-10 2010-06-17 Catalysts & Chemicals Industries Co., Ltd Nodular Silica Sol and Method of Producing the Same
CN1955249B (zh) * 2005-10-28 2012-07-25 安集微电子（上海）有限公司 用于钽阻挡层的化学机械抛光浆料
JP4963825B2 (ja) * 2005-11-16 2012-06-27 日揮触媒化成株式会社 研磨用シリカゾルおよびそれを含有してなる研磨用組成物
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP5289687B2 (ja) * 2006-06-22 2013-09-11 株式会社アドマテックス 研磨材用砥粒及びその製造方法、並びに研磨材
DE102006046619A1 (de) * 2006-09-29 2008-04-03 Heraeus Quarzglas Gmbh & Co. Kg Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
CN101611476B (zh) * 2007-02-27 2015-11-25 日立化成株式会社 金属用研磨液以及研磨方法
JP5329786B2 (ja) * 2007-08-31 2013-10-30 株式会社東芝 研磨液および半導体装置の製造方法
PT103838B (pt) * 2007-09-28 2008-11-03 Cuf Companhia Uniao Fabril Sgp Óxidos cerâmicos esféricos nanocristalinos, processo para a sua síntese e respectivas utilizações
JP5236283B2 (ja) * 2007-12-28 2013-07-17 花王株式会社 ハードディスク基板用研磨液組成物
WO2010052983A1 (ja) * 2008-11-10 2010-05-14 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
CN101838503B (zh) * 2010-02-26 2014-06-25 佛山市柯林瓷砖护理用品有限公司 抛光砖、石材、人造石翻新用抛光剂
CN102533117A (zh) * 2010-12-13 2012-07-04 安集微电子（上海）有限公司 一种用于3d封装tsv硅抛光的化学机械抛光液
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
TWI619805B (zh) 2011-11-08 2018-04-01 福吉米股份有限公司 用於硬脆材料之研磨用組成物、硬脆材料基板之研磨方法及製造方法
WO2013077369A1 (ja) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
KR101480179B1 (ko) * 2011-12-30 2015-01-09 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
CN102796460B (zh) * 2012-08-31 2014-05-07 安特迪（天津）科技有限公司 一种二氧化硅基cmp抛光液及其制备方法
ES2712802T3 (es) * 2013-04-17 2019-05-14 Silbond Corp Método de preparación de un sol de sílice
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP6316680B2 (ja) * 2014-06-30 2018-04-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP2016155900A (ja) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法及び硬脆材料基板の製造方法
JP6436018B2 (ja) * 2015-08-28 2018-12-12 住友金属鉱山株式会社 酸化物単結晶基板の研磨スラリー及びその製造方法
US11400458B2 (en) * 2018-06-08 2022-08-02 Green Coal Technologies (Pty.) Ltd. Process and equipment assembly for beneficiation of coal discards
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN115116842B (zh) * 2022-02-19 2024-10-29 上海钧乾智造科技有限公司 含全氟取代基的聚乙烯胺共聚物在单晶硅片碱抛光中的应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0773270B1 (en) * 1995-11-10 2001-01-24 Tokuyama Corporation Polishing slurries and a process for the production thereof
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
JP4105838B2 (ja) * 1999-03-31 2008-06-25 株式会社トクヤマ 研磨剤及び研磨方法
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces

Also Published As

Publication number Publication date
AU2001256208A1 (en) 2001-10-15
EP1274807B1 (de) 2005-08-24
CN1240797C (zh) 2006-02-08
WO2001074958A3 (de) 2002-02-28
HK1056194A1 (en) 2004-02-06
TW526250B (en) 2003-04-01
WO2001074958A2 (de) 2001-10-11
EP1274807A2 (de) 2003-01-15
JP2003529662A (ja) 2003-10-07
ATE302830T1 (de) 2005-09-15
CN1420917A (zh) 2003-05-28
US20030061766A1 (en) 2003-04-03

Similar Documents

Publication Publication Date Title
IL151794A0 (en) Polishing agent and method for producing planar layers
ES2167564T3 (es) Metodo para producir un transductor semiconductor.
KR0145300B1 (ko) 실리콘 웨이퍼의 연마방법
MY133700A (en) Polishing fluid composition and polishing method
MY119523A (en) Chemical mechanical polishing process for layers of semiconductor or isolating materials
JPS6138954B2 (enExample)
TW324676B (en) Polishing agent, method for producing the same and method for polishing
DE69429331D1 (de) Fällungskieselsäuren
JPH04226862A (ja) 砥粒物品
ES2080728T3 (es) Procedimiento para la preparacion previa de una superficie de substrato para la union con material sintetico por aplicacion de una capa, y utilizacion de un material eventualmente silanizado y/o de un material que contiene silicio, silanizado.
TW365563B (en) Polishing agent for semiconductor and method for its production
PL361891A1 (en) Highly durable hydrophobic coatings and methods
WO2002102920A8 (en) A silica and a silica-based slurry
FR2785614B1 (fr) Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
ATE447542T1 (de) Siliciumdioxid-aluminiumoxid-verbund-sol, verfahren zu dessen herstellung, und aufnahme- medium
MY128000A (en) Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material
ATE142987T1 (de) Kieselsäuren
MY118930A (en) Process for mechanical chemical polishing of a layer in a copper-based material
KR970003588A (ko) 반도체 웨이퍼 연마용 연마제 및 연마방법
CA2307154A1 (en) Polishing slurry
MY121626A (en) Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon
AU2003245744A1 (en) Process for chemical-mechanical polishing of metal substrates
JP2894208B2 (ja) シリコンウェーハ研磨用研磨剤及び研磨方法
MY134689A (en) Silica-based particulates
MY124983A (en) Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant