CN1240797C - 抛光剂和生产平面层的方法 - Google Patents

抛光剂和生产平面层的方法 Download PDF

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Publication number
CN1240797C
CN1240797C CNB018074324A CN01807432A CN1240797C CN 1240797 C CN1240797 C CN 1240797C CN B018074324 A CNB018074324 A CN B018074324A CN 01807432 A CN01807432 A CN 01807432A CN 1240797 C CN1240797 C CN 1240797C
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CN
China
Prior art keywords
polishing
polishing agent
silica
particle size
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018074324A
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English (en)
Chinese (zh)
Other versions
CN1420917A (zh
Inventor
K·沃格特
D·潘特克
L·普佩
S·基尔希梅耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10063870A external-priority patent/DE10063870A1/de
Application filed by Bayer AG filed Critical Bayer AG
Publication of CN1420917A publication Critical patent/CN1420917A/zh
Application granted granted Critical
Publication of CN1240797C publication Critical patent/CN1240797C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
CNB018074324A 2000-03-31 2001-03-19 抛光剂和生产平面层的方法 Expired - Fee Related CN1240797C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10016020.4 2000-03-31
DE10016020 2000-03-31
DE10063870A DE10063870A1 (de) 2000-03-31 2000-12-21 Poliermittel und Verfahren zur Herstellung planarer Schichten
DE10063870.8 2000-12-21

Publications (2)

Publication Number Publication Date
CN1420917A CN1420917A (zh) 2003-05-28
CN1240797C true CN1240797C (zh) 2006-02-08

Family

ID=26005114

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018074324A Expired - Fee Related CN1240797C (zh) 2000-03-31 2001-03-19 抛光剂和生产平面层的方法

Country Status (9)

Country Link
US (1) US20030061766A1 (enExample)
EP (1) EP1274807B1 (enExample)
JP (1) JP2003529662A (enExample)
CN (1) CN1240797C (enExample)
AT (1) ATE302830T1 (enExample)
AU (1) AU2001256208A1 (enExample)
IL (1) IL151794A0 (enExample)
TW (1) TW526250B (enExample)
WO (1) WO2001074958A2 (enExample)

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US6884144B2 (en) 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
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US20050056810A1 (en) * 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
WO2005029563A1 (ja) * 2003-09-24 2005-03-31 Nippon Chemical Industrial Co.,Ltd. シリコンウエハ研磨用組成物および研磨方法
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
JP4291665B2 (ja) * 2003-10-15 2009-07-08 日本化学工業株式会社 珪酸質材料用研磨剤組成物およびそれを用いた研磨方法
US7470295B2 (en) * 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
DE602005023557D1 (de) * 2004-04-12 2010-10-28 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20100146864A1 (en) * 2005-08-10 2010-06-17 Catalysts & Chemicals Industries Co., Ltd Nodular Silica Sol and Method of Producing the Same
CN1955249B (zh) * 2005-10-28 2012-07-25 安集微电子（上海）有限公司 用于钽阻挡层的化学机械抛光浆料
JP4963825B2 (ja) * 2005-11-16 2012-06-27 日揮触媒化成株式会社 研磨用シリカゾルおよびそれを含有してなる研磨用組成物
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP5289687B2 (ja) * 2006-06-22 2013-09-11 株式会社アドマテックス 研磨材用砥粒及びその製造方法、並びに研磨材
DE102006046619A1 (de) * 2006-09-29 2008-04-03 Heraeus Quarzglas Gmbh & Co. Kg Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
CN102690607B (zh) * 2007-02-27 2015-02-11 日立化成株式会社 金属用研磨液及其应用
JP5329786B2 (ja) * 2007-08-31 2013-10-30 株式会社東芝 研磨液および半導体装置の製造方法
PT103838B (pt) * 2007-09-28 2008-11-03 Cuf Companhia Uniao Fabril Sgp Óxidos cerâmicos esféricos nanocristalinos, processo para a sua síntese e respectivas utilizações
JP5236283B2 (ja) * 2007-12-28 2013-07-17 花王株式会社 ハードディスク基板用研磨液組成物
CN102210013B (zh) * 2008-11-10 2014-07-09 旭硝子株式会社 研磨用组合物和半导体集成电路装置的制造方法
CN101838503B (zh) * 2010-02-26 2014-06-25 佛山市柯林瓷砖护理用品有限公司 抛光砖、石材、人造石翻新用抛光剂
CN102533117A (zh) * 2010-12-13 2012-07-04 安集微电子（上海）有限公司 一种用于3d封装tsv硅抛光的化学机械抛光液
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
JPWO2013069623A1 (ja) 2011-11-08 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物
WO2013077369A1 (ja) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
KR101480179B1 (ko) * 2011-12-30 2015-01-09 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP6132315B2 (ja) * 2012-04-18 2017-05-24 株式会社フジミインコーポレーテッド 研磨用組成物
CN102796460B (zh) * 2012-08-31 2014-05-07 安特迪（天津）科技有限公司 一种二氧化硅基cmp抛光液及其制备方法
MY189765A (en) * 2013-04-17 2022-03-03 Silbond Corp Colloidal sol and method of making same
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP6316680B2 (ja) * 2014-06-30 2018-04-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP2016155900A (ja) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法及び硬脆材料基板の製造方法
JP6436018B2 (ja) * 2015-08-28 2018-12-12 住友金属鉱山株式会社 酸化物単結晶基板の研磨スラリー及びその製造方法
WO2019234650A1 (en) * 2018-06-08 2019-12-12 Robin Duncan Kirkpatrick Process and equipment assembly for beneficiation of coal discards
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN115116842B (zh) * 2022-02-19 2024-10-29 上海钧乾智造科技有限公司 含全氟取代基的聚乙烯胺共聚物在单晶硅片碱抛光中的应用

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US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
JP4105838B2 (ja) * 1999-03-31 2008-06-25 株式会社トクヤマ 研磨剤及び研磨方法
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces

Also Published As

Publication number Publication date
WO2001074958A3 (de) 2002-02-28
ATE302830T1 (de) 2005-09-15
EP1274807B1 (de) 2005-08-24
JP2003529662A (ja) 2003-10-07
CN1420917A (zh) 2003-05-28
EP1274807A2 (de) 2003-01-15
AU2001256208A1 (en) 2001-10-15
HK1056194A1 (en) 2004-02-06
IL151794A0 (en) 2003-04-10
US20030061766A1 (en) 2003-04-03
TW526250B (en) 2003-04-01
WO2001074958A2 (de) 2001-10-11

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
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Granted publication date: 20060208

Termination date: 20100319