KR100737202B1 - 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 - Google Patents
화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법 Download PDFInfo
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- KR100737202B1 KR100737202B1 KR1020050063511A KR20050063511A KR100737202B1 KR 100737202 B1 KR100737202 B1 KR 100737202B1 KR 1020050063511 A KR1020050063511 A KR 1020050063511A KR 20050063511 A KR20050063511 A KR 20050063511A KR 100737202 B1 KR100737202 B1 KR 100737202B1
- Authority
- KR
- South Korea
- Prior art keywords
- chemical mechanical
- mechanical polishing
- aqueous dispersion
- cationic
- ceria
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 115
- 239000000126 substance Substances 0.000 title claims abstract description 92
- 239000006185 dispersion Substances 0.000 title claims abstract description 84
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- 239000006061 abrasive grain Substances 0.000 claims abstract description 25
- 125000002091 cationic group Chemical group 0.000 claims description 63
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- 238000002050 diffraction method Methods 0.000 description 4
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- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
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- GSZJXKXRHCJVCI-UHFFFAOYSA-N bis[2-(4,5,6,7-tetrahydro-1h-1,3-diazepin-2-yl)propan-2-yl]diazene;dihydrochloride Chemical compound Cl.Cl.N=1CCCCNC=1C(C)(C)N=NC(C)(C)C1=NCCCCN1 GSZJXKXRHCJVCI-UHFFFAOYSA-N 0.000 description 1
- QYUBAJCENSDUNZ-UHFFFAOYSA-N bis[2-methyl-1-(5-methyl-4,5-dihydro-1h-imidazol-2-yl)propan-2-yl]diazene;dihydrochloride Chemical compound Cl.Cl.N1C(C)CN=C1CC(C)(C)N=NC(C)(C)CC1=NCC(C)N1 QYUBAJCENSDUNZ-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 description 1
- 229910000149 boron phosphate Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229960001759 cerium oxalate Drugs 0.000 description 1
- ZMZNLKYXLARXFY-UHFFFAOYSA-H cerium(3+);oxalate Chemical compound [Ce+3].[Ce+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O ZMZNLKYXLARXFY-UHFFFAOYSA-H 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- NEHMKBQYUWJMIP-NJFSPNSNSA-N chloro(114C)methane Chemical compound [14CH3]Cl NEHMKBQYUWJMIP-NJFSPNSNSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- DENRZWYUOJLTMF-UHFFFAOYSA-N diethyl sulfate Chemical compound CCOS(=O)(=O)OCC DENRZWYUOJLTMF-UHFFFAOYSA-N 0.000 description 1
- 229940008406 diethyl sulfate Drugs 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 1
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
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- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
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- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
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- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
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- 235000011090 malic acid Nutrition 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
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- QYZFTMMPKCOTAN-UHFFFAOYSA-N n-[2-(2-hydroxyethylamino)ethyl]-2-[[1-[2-(2-hydroxyethylamino)ethylamino]-2-methyl-1-oxopropan-2-yl]diazenyl]-2-methylpropanamide Chemical compound OCCNCCNC(=O)C(C)(C)N=NC(C)(C)C(=O)NCCNCCO QYZFTMMPKCOTAN-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
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- 230000007935 neutral effect Effects 0.000 description 1
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- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (7)
- 세리아와 양이온성 유기 입자를 혼합하여 얻어지는 복합 입자를 포함하는 지립(abrasive)을 1.5 질량% 이하의 농도로 함유하고, 추가로 음이온성 수용성 유기 중합체를 함유하며, 상기 양이온성 유기 입자의 혼합량이 세리아 100 질량부에 대하여 100 질량부 이하이고, 상기 지립의 평균 분산 입경이 1.0 ㎛ 이상인 것을 특징으로 하는 화학 기계 연마용 수계 분산체.
- 삭제
- 평균 분산 입경이 1.0 ㎛ 미만인 세리아를 함유하는 수분산체를 세리아 환산으로 100 질량부로, 평균 분산 입경이 1.0 ㎛ 미만인 양이온성 유기 입자를 함유하는 수분산체를 양이온성 유기 입자 환산으로 100 질량부 이하로 혼합하는 것을 특징으로 하는, 제1항에 기재된 화학 기계 연마용 수계 분산체의 제조 방법.
- 제1항에 기재된 화학 기계 연마용 수계 분산체를 사용하여 절연막을 연마하는 것을 특징으로 하는 화학 기계 연마 방법.
- 제4항에 있어서, 절연막이 PETEOS막, HDP막, 열 CVD법에 의해 얻어지는 산화 실리콘막, 붕소인실리케이트막 또는 불소 도핑 실리케이트막인 것을 특징으로 하는 화학 기계 연마 방법.
- 제1항에 있어서, 상기 양이온성 유기 입자가 양이온성 잔기를 갖는 중합체 입자 및 양이온성 잔기를 갖는 계면활성제가 부착된 중합체 입자로 이루어지는 군으로부터 선택되는 1종 이상의 양이온성 유기 입자인 것을 특징으로 하는 화학 기계 연마용 수계 분산체.
- 제1항에 있어서, 상기 음이온성 수용성 유기 중합체가 카르복실기 또는 술폰기를 갖는 수용성 유기 중합체인 것을 특징으로 하는 화학 기계 연마용 수계 분산체.
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JPJP-P-2004-00208609 | 2004-07-15 | ||
JP2004208609A JP4292117B2 (ja) | 2004-07-15 | 2004-07-15 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
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KR20060050146A KR20060050146A (ko) | 2006-05-19 |
KR100737202B1 true KR100737202B1 (ko) | 2007-07-10 |
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US (1) | US7550020B2 (ko) |
EP (1) | EP1616927B1 (ko) |
JP (1) | JP4292117B2 (ko) |
KR (1) | KR100737202B1 (ko) |
CN (1) | CN1324106C (ko) |
DE (1) | DE602005002409T2 (ko) |
TW (1) | TWI304090B (ko) |
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JP4292117B2 (ja) | 2004-07-15 | 2009-07-08 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
WO2007069488A1 (ja) * | 2005-12-16 | 2007-06-21 | Jsr Corporation | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
US20090325323A1 (en) * | 2006-07-18 | 2009-12-31 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, production method thereof, and chemical mechanical polishing method |
CN101512733A (zh) * | 2006-09-11 | 2009-08-19 | 旭硝子株式会社 | 用于半导体集成电路装置的抛光剂、抛光方法以及半导体集成电路装置的制造方法 |
JP4811586B2 (ja) * | 2006-09-28 | 2011-11-09 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法ならびに化学機械研磨方法 |
US20090090696A1 (en) * | 2007-10-08 | 2009-04-09 | Cabot Microelectronics Corporation | Slurries for polishing oxide and nitride with high removal rates |
US8617275B2 (en) * | 2008-04-23 | 2013-12-31 | Hitachi Chemical Company, Ltd. | Polishing agent and method for polishing substrate using the polishing agent |
CN102477261B (zh) * | 2010-11-26 | 2015-06-17 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
EP2914675A4 (en) * | 2012-11-02 | 2016-10-05 | L Livermore Nat Security Llc | METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY |
EP3053977B1 (en) | 2013-09-30 | 2019-09-11 | Fujimi Incorporated | Polishing composition and method for producing same |
EP3582252B1 (en) * | 2017-02-08 | 2022-02-23 | Showa Denko Materials Co., Ltd. | Polishing method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010106264A (ko) * | 2000-05-18 | 2001-11-29 | 마쯔모또 에이찌 | 화학 기계 연마용 수계 분산체 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235631A (ja) | 1984-05-09 | 1985-11-22 | Toho Chem Ind Co Ltd | 非自己重合性反応性カチオン界面活性剤 |
JP3335667B2 (ja) | 1992-05-26 | 2002-10-21 | 株式会社東芝 | 半導体装置の製造方法 |
JPH09270402A (ja) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
TW420716B (en) | 1996-12-09 | 2001-02-01 | Ibm | Polish process and slurry for planarization |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
JP2000109809A (ja) | 1998-10-08 | 2000-04-18 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2000252245A (ja) | 1999-03-01 | 2000-09-14 | Hitachi Chem Co Ltd | Cmp研磨液 |
JP3784988B2 (ja) | 1999-03-18 | 2006-06-14 | 株式会社東芝 | 半導体装置の製造方法 |
KR100447552B1 (ko) | 1999-03-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법 |
JP2001007061A (ja) | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
DE60015479T2 (de) * | 1999-11-22 | 2005-10-27 | Jsr Corp. | Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren |
JP2001185514A (ja) | 1999-12-27 | 2001-07-06 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2002204353A (ja) | 2000-12-28 | 2002-07-19 | Fujitsu Ltd | 画像状態推定方法、画像補正方法および補正装置 |
US7004819B2 (en) * | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
JP2003313542A (ja) | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
TWI256971B (en) * | 2002-08-09 | 2006-06-21 | Hitachi Chemical Co Ltd | CMP abrasive and method for polishing substrate |
US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
EP1566420A1 (en) | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
JP4292117B2 (ja) | 2004-07-15 | 2009-07-08 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
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KR20010106264A (ko) * | 2000-05-18 | 2001-11-29 | 마쯔모또 에이찌 | 화학 기계 연마용 수계 분산체 |
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CN1721494A (zh) | 2006-01-18 |
JP2006032611A (ja) | 2006-02-02 |
US20060010781A1 (en) | 2006-01-19 |
EP1616927A1 (en) | 2006-01-18 |
US7550020B2 (en) | 2009-06-23 |
KR20060050146A (ko) | 2006-05-19 |
DE602005002409T2 (de) | 2008-06-12 |
TW200602473A (en) | 2006-01-16 |
JP4292117B2 (ja) | 2009-07-08 |
DE602005002409D1 (de) | 2007-10-25 |
CN1324106C (zh) | 2007-07-04 |
TWI304090B (en) | 2008-12-11 |
EP1616927B1 (en) | 2007-09-12 |
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