IL151794A0 - Polishing agent and method for producing planar layers - Google Patents

Polishing agent and method for producing planar layers

Info

Publication number
IL151794A0
IL151794A0 IL15179401A IL15179401A IL151794A0 IL 151794 A0 IL151794 A0 IL 151794A0 IL 15179401 A IL15179401 A IL 15179401A IL 15179401 A IL15179401 A IL 15179401A IL 151794 A0 IL151794 A0 IL 151794A0
Authority
IL
Israel
Prior art keywords
particles
atoms
polishing agent
polishing
planar layers
Prior art date
Application number
IL15179401A
Other languages
English (en)
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10063870A external-priority patent/DE10063870A1/de
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of IL151794A0 publication Critical patent/IL151794A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
IL15179401A 2000-03-31 2001-03-19 Polishing agent and method for producing planar layers IL151794A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10016020 2000-03-31
DE10063870A DE10063870A1 (de) 2000-03-31 2000-12-21 Poliermittel und Verfahren zur Herstellung planarer Schichten
PCT/EP2001/003113 WO2001074958A2 (de) 2000-03-31 2001-03-19 Poliermittel und verfahren zur herstellung planarer schichten

Publications (1)

Publication Number Publication Date
IL151794A0 true IL151794A0 (en) 2003-04-10

Family

ID=26005114

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15179401A IL151794A0 (en) 2000-03-31 2001-03-19 Polishing agent and method for producing planar layers

Country Status (10)

Country Link
US (1) US20030061766A1 (xx)
EP (1) EP1274807B1 (xx)
JP (1) JP2003529662A (xx)
CN (1) CN1240797C (xx)
AT (1) ATE302830T1 (xx)
AU (1) AU2001256208A1 (xx)
HK (1) HK1056194A1 (xx)
IL (1) IL151794A0 (xx)
TW (1) TW526250B (xx)
WO (1) WO2001074958A2 (xx)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
US6884144B2 (en) 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US20050056810A1 (en) * 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
JPWO2005029563A1 (ja) * 2003-09-24 2007-11-15 日本化学工業株式会社 シリコンウエハ研磨用組成物および研磨方法
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
JP4291665B2 (ja) * 2003-10-15 2009-07-08 日本化学工業株式会社 珪酸質材料用研磨剤組成物およびそれを用いた研磨方法
TWI334882B (en) * 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
EP1586614B1 (en) * 2004-04-12 2010-09-15 JSR Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
JP5127452B2 (ja) * 2005-08-10 2013-01-23 日揮触媒化成株式会社 異形シリカゾルの製造方法
CN1955249B (zh) * 2005-10-28 2012-07-25 安集微电子（上海）有限公司 用于钽阻挡层的化学机械抛光浆料
JP4963825B2 (ja) * 2005-11-16 2012-06-27 日揮触媒化成株式会社 研磨用シリカゾルおよびそれを含有してなる研磨用組成物
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP5289687B2 (ja) * 2006-06-22 2013-09-11 株式会社アドマテックス 研磨材用砥粒及びその製造方法、並びに研磨材
DE102006046619A1 (de) * 2006-09-29 2008-04-03 Heraeus Quarzglas Gmbh & Co. Kg Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
KR101418626B1 (ko) * 2007-02-27 2014-07-14 히타치가세이가부시끼가이샤 금속용 연마액 및 연마방법
JP5329786B2 (ja) * 2007-08-31 2013-10-30 株式会社東芝 研磨液および半導体装置の製造方法
PT103838B (pt) * 2007-09-28 2008-11-03 Cuf Companhia Uniao Fabril Sgp Óxidos cerâmicos esféricos nanocristalinos, processo para a sua síntese e respectivas utilizações
JP5236283B2 (ja) * 2007-12-28 2013-07-17 花王株式会社 ハードディスク基板用研磨液組成物
TWI457423B (zh) * 2008-11-10 2014-10-21 Asahi Glass Co Ltd A polishing composition, and a method for manufacturing a semiconductor integrated circuit device
CN101838503B (zh) * 2010-02-26 2014-06-25 佛山市柯林瓷砖护理用品有限公司 抛光砖、石材、人造石翻新用抛光剂
CN102533117A (zh) * 2010-12-13 2012-07-04 安集微电子（上海）有限公司 一种用于3d封装tsv硅抛光的化学机械抛光液
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
JPWO2013069623A1 (ja) 2011-11-08 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR102028217B1 (ko) * 2011-11-25 2019-10-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
KR101480179B1 (ko) * 2011-12-30 2015-01-09 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP6132315B2 (ja) * 2012-04-18 2017-05-24 株式会社フジミインコーポレーテッド 研磨用組成物
CN102796460B (zh) * 2012-08-31 2014-05-07 安特迪（天津）科技有限公司 一种二氧化硅基cmp抛光液及其制备方法
JP6483089B2 (ja) * 2013-04-17 2019-03-13 シルボンド・コーポレイションＳｉｌｂｏｎｄ Ｃｏｒｐｏｒａｔｉｏｎ コロイドゾルとその製造方法
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP6316680B2 (ja) * 2014-06-30 2018-04-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP2016155900A (ja) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法及び硬脆材料基板の製造方法
JP6436018B2 (ja) * 2015-08-28 2018-12-12 住友金属鉱山株式会社 酸化物単結晶基板の研磨スラリー及びその製造方法
US11400458B2 (en) * 2018-06-08 2022-08-02 Green Coal Technologies (Pty.) Ltd. Process and equipment assembly for beneficiation of coal discards
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69611653T2 (de) * 1995-11-10 2001-05-03 Tokuyama Corp Poliersuspensionen und Verfahren zu ihrer Herstellung
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
JP4105838B2 (ja) * 1999-03-31 2008-06-25 株式会社トクヤマ 研磨剤及び研磨方法
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces

Also Published As

Publication number Publication date
WO2001074958A3 (de) 2002-02-28
US20030061766A1 (en) 2003-04-03
CN1240797C (zh) 2006-02-08
EP1274807B1 (de) 2005-08-24
AU2001256208A1 (en) 2001-10-15
EP1274807A2 (de) 2003-01-15
JP2003529662A (ja) 2003-10-07
TW526250B (en) 2003-04-01
ATE302830T1 (de) 2005-09-15
CN1420917A (zh) 2003-05-28
HK1056194A1 (en) 2004-02-06
WO2001074958A2 (de) 2001-10-11

Similar Documents

Publication Publication Date Title
HK1056194A1 (en) Polishing agent and method for producing planar layers
ES2167564T3 (es) Metodo para producir un transductor semiconductor.
MY133700A (en) Polishing fluid composition and polishing method
JPS6138954B2 (xx)
TW324676B (en) Polishing agent, method for producing the same and method for polishing
EP1088789A3 (en) Porous silica granule, its method of production and its use in a method for producing quartz glass
ATE131372T1 (de) Verfahren zur vorbereitung einer substratoberfläche für die verbindung mit kunststoff durch aufbringen einer schicht und verwendung von gegebenenfalls silanisiertem und/oder von silanisiertem, siliciumhaltigem material
DE69429331D1 (de) Fällungskieselsäuren
MY119523A (en) Chemical mechanical polishing process for layers of semiconductor or isolating materials
JPH04226862A (ja) 砥粒物品
WO2002102920A8 (en) A silica and a silica-based slurry
FR2785614B1 (fr) Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
ATE447542T1 (de) Siliciumdioxid-aluminiumoxid-verbund-sol, verfahren zu dessen herstellung, und aufnahme- medium
MY128000A (en) Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material
MY118930A (en) Process for mechanical chemical polishing of a layer in a copper-based material
WO2002016075A3 (en) Cmp apparatus with an oscillating polishing pad rotating in the opposite direction of the wafer
KR910003763A (ko) 반도체 기판 연마용 연마액과 연마방법
KR970003588A (ko) 반도체 웨이퍼 연마용 연마제 및 연마방법
MY121626A (en) Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon
MY135387A (en) Process for the chemical-mechanical polishing of metal substrates
EP0685877A2 (en) Polishing agent used for polishing silicon wafers and polishing method using the same
WO2002021581A3 (en) Method for uniform polish microelectronic device
CA2205790A1 (en) Process for preparing amino-silane compounds, and novel amino-silane compounds
CN1684234B (zh) 表面极少缺陷的晶片的制备方法，用途和含它的电子元件
Esibov et al. Dynamics of pseudo-partial wetting studied by neutron reflectometry