KR970003588A - 반도체 웨이퍼 연마용 연마제 및 연마방법 - Google Patents

반도체 웨이퍼 연마용 연마제 및 연마방법 Download PDF

Info

Publication number
KR970003588A
KR970003588A KR1019960019069A KR19960019069A KR970003588A KR 970003588 A KR970003588 A KR 970003588A KR 1019960019069 A KR1019960019069 A KR 1019960019069A KR 19960019069 A KR19960019069 A KR 19960019069A KR 970003588 A KR970003588 A KR 970003588A
Authority
KR
South Korea
Prior art keywords
polishing
semiconductor wafer
abrasive
polyolefin
back surface
Prior art date
Application number
KR1019960019069A
Other languages
English (en)
Other versions
KR100203340B1 (ko
Inventor
히사시 마스무라
기요시 스즈키
히데오 구도
데루아키 후카미
Original Assignee
이가라시 스구루
신 에츠 한도타이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이가라시 스구루, 신 에츠 한도타이 가부시키가이샤 filed Critical 이가라시 스구루
Publication of KR970003588A publication Critical patent/KR970003588A/ko
Application granted granted Critical
Publication of KR100203340B1 publication Critical patent/KR100203340B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

웨이퍼표면의 저휘도화 연마처리를 가능하게 하고, 센서에 의한 웨이퍼의 표면과 이면의 검지가 가능하며, 발진성을 저하시키는 것에 의해 이면의 치핑에 의한 발진을 억제하여 디바이스의 수율을 높일 수 있도록 한 신규의 반도체 웨이퍼 연마용 연마제 및 연마방법, 그리고 또 종래에 없는 이면형상을 가지는 신규한 반도체 웨이퍼를 제공한다.
반도체 웨이퍼 연마용 연마제가, 실리카가 함유된 연마제를 주성분으로 하고, 폴리올레핀계 미립자재료를 첨가하여 이루어진 것을 특징으로 한다.

Description

반도체 웨이퍼 연마용 연마제 및 연마방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1에 있어서의 저휘도화 연마처리된 웨이퍼표면의 현미경사진.

Claims (8)

  1. 실리카가 함유된 연마제를 주성분으로 하고, 폴리올레핀계 미립자재료를 첨가하여 이루어진 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  2. 제1항에 있어서, 상기 실리카가 함유된 연마제가 콜로이드 실리카 연마제인 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  3. 제1항 또는 제2항에 있어서, 상기 폴리올레핀계 미립자재료가 폴리올레핀 수성현탁액인 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 폴리올레핀계 미립자재료의 첨가량이 연마제의 총량에 대하여 0.01 ~ 1wt%의 범위인 것을 특징으로 하는 반도체 웨이퍼 연마용 연마제.
  5. 반도체 웨이퍼를 연마함에 있어서,상기 제1항 내지 제4항의 어느 한 항에 기재한 반도체 웨이퍼 연마용 연마제를 사용하여 저휘도화 연마를 행하는 것을 특징으로 하는 반도체 웨이퍼의 연마방법.
  6. 표면은 유리면이고, 이면이 제5항에 기재한 방법에 의하여 연마된 저휘도화 연마면인 것을 특징으로 하는 반도체 웨이퍼.
  7. 표면은 유리면이고, 이면이 다수의 반구면형상의 작은 돌기를 가지는 것을 특징으로 하는 반도체 웨이퍼.
  8. 상기 반구면형상의 작은 돌기의 높이가 0.05 ~ 0.5㎛이고, 직경이 50 ~ 500㎛인 것을 특징으로 하는 반도체 웨이퍼.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960019069A 1995-06-23 1996-05-31 반도체 웨이퍼 연마용 연마제 및 연마방법 KR100203340B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18113095A JP3134719B2 (ja) 1995-06-23 1995-06-23 半導体ウェーハ研磨用研磨剤及び研磨方法
JP95-181130 1995-06-23

Publications (2)

Publication Number Publication Date
KR970003588A true KR970003588A (ko) 1997-01-28
KR100203340B1 KR100203340B1 (ko) 1999-06-15

Family

ID=16095404

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019069A KR100203340B1 (ko) 1995-06-23 1996-05-31 반도체 웨이퍼 연마용 연마제 및 연마방법

Country Status (4)

Country Link
US (2) US5866226A (ko)
EP (1) EP0750335A3 (ko)
JP (1) JP3134719B2 (ko)
KR (1) KR100203340B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010004982A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 산화막 연마용 슬러리 제조 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19722679A1 (de) * 1997-05-30 1998-12-03 Wacker Siltronic Halbleitermat Scheibenhalter und Verfahren zur Herstellung einer Halbleiterscheibe
JP3449459B2 (ja) 1997-06-02 2003-09-22 株式会社ジャパンエナジー 薄膜形成装置用部材の製造方法および該装置用部材
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
JP2001267273A (ja) 2000-01-11 2001-09-28 Sumitomo Chem Co Ltd 金属用研磨材、研磨組成物及び研磨方法
CN1446142A (zh) * 2000-08-07 2003-10-01 Memc电子材料有限公司 用双面抛光加工半导体晶片的方法
JP4561950B2 (ja) * 2001-08-08 2010-10-13 信越化学工業株式会社 角形基板
WO2004027840A2 (en) * 2002-09-18 2004-04-01 Memc Electronic Materials, Inc. Process for etching silicon wafers
US7456105B1 (en) * 2002-12-17 2008-11-25 Amd, Inc. CMP metal polishing slurry and process with reduced solids concentration
JP4273943B2 (ja) * 2003-12-01 2009-06-03 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
US8177603B2 (en) * 2008-04-29 2012-05-15 Semiquest, Inc. Polishing pad composition
WO2010053570A1 (en) 2008-11-07 2010-05-14 Becton, Dickinson And Company Syringe housing to facilitate medication injection
CN110473774A (zh) * 2019-08-23 2019-11-19 大同新成新材料股份有限公司 一种芯片硅生产用无尘加工工艺

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54110783A (en) * 1978-02-20 1979-08-30 Hitachi Ltd Semiconductor substrate and its manufacture
JPS6154614A (ja) * 1984-08-24 1986-03-18 Sumitomo Electric Ind Ltd 化合物半導体基板の前処理方法
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH04291724A (ja) * 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハーの研摩方法
JPH04291722A (ja) * 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー表面のヘイズ防止方法
JPH04291723A (ja) * 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー用研摩剤
US5139571A (en) * 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
JP2839801B2 (ja) * 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
JP2910507B2 (ja) * 1993-06-08 1999-06-23 信越半導体株式会社 半導体ウエーハの製造方法
JPH0786289A (ja) * 1993-07-22 1995-03-31 Toshiba Corp 半導体シリコンウェハおよびその製造方法
JP2894208B2 (ja) * 1994-06-02 1999-05-24 信越半導体株式会社 シリコンウェーハ研磨用研磨剤及び研磨方法
JP3317330B2 (ja) * 1995-12-27 2002-08-26 信越半導体株式会社 半導体鏡面ウェーハの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010004982A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 산화막 연마용 슬러리 제조 방법

Also Published As

Publication number Publication date
JPH097987A (ja) 1997-01-10
KR100203340B1 (ko) 1999-06-15
US5866226A (en) 1999-02-02
EP0750335A2 (en) 1996-12-27
US5891353A (en) 1999-04-06
EP0750335A3 (en) 1998-09-23
JP3134719B2 (ja) 2001-02-13

Similar Documents

Publication Publication Date Title
KR970003588A (ko) 반도체 웨이퍼 연마용 연마제 및 연마방법
WO2000000560A3 (en) Chemical mechanical polishing slurry and method for using same
EP0373501A3 (en) Fine polishing composition for wafers
PT829012E (pt) Processo de producao de um transdutor de semicondutor
EP0782179A3 (en) Method of manufacturing semiconductor mirror wafers
EP0947469A3 (en) Abrasive
CA2233876A1 (en) Coating method of amorphous type titanium peroxide
EP0395137A3 (en) Sensor with antigen chemically bonded to a semiconductor device
CA2022272A1 (en) Vitrified bonded sol gel sintered aluminous abrasive bodies
MY126569A (en) Abrasive articles comprising a fluorochemical agent for wafer surface modification
HK1056194A1 (en) Polishing agent and method for producing planar layers
EP1160300A3 (en) Aqueous dispersion for chemical mechanical polishing
DK144990A (da) Enzymatisk detergent
EP0684634A3 (en) Method of rough polishing semiconductor wafers to reduce surface roughness
KR980005293A (ko) 웨이퍼 본딩 장치
KR970701613A (ko) 연삭재와 그 제조 및 사용 방법(abrasive articles, methods of making abrasive articles, and methods of using abrasive articles)
ATE292658T1 (de) Siliciumdioxid-mattierungsmittel
MY129570A (en) Semiconductor integrated circuit device and a method of manufacturing the same
WO2003046968A1 (fr) Procede de production d'une tranche de silicone, tranche de silicone et tranche soi
TW343354B (en) Reticle and pattern and correction method using the shifting of the reticle
IT9048246A0 (it) Procedimento per la lucidatura chimica meccanica bilaterale di fette di semiconduttori, nonche' dispositivo per la sua esecuzione, e fette di semiconduttori ottenibili con questo.
PL285840A1 (en) Device for increasing storage durability of surface substrate sections
KR920007104A (ko) 반도체소자의 제조방법
ATE527211T1 (de) Neutrale wassrige suspension von kolloidalen kieselsäure
TW269052B (en) Process for semiconductor wafer, semiconductor integrated circuit and devices thereof

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]
FPAY Annual fee payment

Payment date: 20020313

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee