ATE527211T1 - Neutrale wassrige suspension von kolloidalen kieselsäure - Google Patents
Neutrale wassrige suspension von kolloidalen kieselsäureInfo
- Publication number
- ATE527211T1 ATE527211T1 AT01101577T AT01101577T ATE527211T1 AT E527211 T1 ATE527211 T1 AT E527211T1 AT 01101577 T AT01101577 T AT 01101577T AT 01101577 T AT01101577 T AT 01101577T AT E527211 T1 ATE527211 T1 AT E527211T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- suspension
- aqueous suspension
- silicic acid
- neutral
- Prior art date
Links
- 230000007935 neutral effect Effects 0.000 title abstract 3
- 239000007900 aqueous suspension Substances 0.000 title 1
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000725 suspension Substances 0.000 abstract 3
- 239000008119 colloidal silica Substances 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000005380 borophosphosilicate glass Substances 0.000 abstract 1
- 239000004744 fabric Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- -1 polysilicon Chemical compound 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
- C01B33/141—Preparation of hydrosols or aqueous dispersions
- C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
- C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9704207A FR2761629B1 (fr) | 1997-04-07 | 1997-04-07 | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE527211T1 true ATE527211T1 (de) | 2011-10-15 |
Family
ID=9505584
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98400715T ATE291277T1 (de) | 1997-04-07 | 1998-03-26 | Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten |
AT01101577T ATE527211T1 (de) | 1997-04-07 | 1998-03-26 | Neutrale wassrige suspension von kolloidalen kieselsäure |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98400715T ATE291277T1 (de) | 1997-04-07 | 1998-03-26 | Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten |
Country Status (11)
Country | Link |
---|---|
US (1) | US6126518A (de) |
EP (2) | EP1111023B1 (de) |
JP (1) | JP4233629B2 (de) |
KR (1) | KR100510951B1 (de) |
CN (1) | CN1152416C (de) |
AT (2) | ATE291277T1 (de) |
DE (1) | DE69829329T2 (de) |
FR (1) | FR2761629B1 (de) |
HK (1) | HK1018540A1 (de) |
MY (1) | MY119523A (de) |
SG (1) | SG77633A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113045992A (zh) * | 2021-03-23 | 2021-06-29 | 广东精坚科技有限公司 | 一种中性抛光液及其制备方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2781922B1 (fr) | 1998-07-31 | 2001-11-23 | Clariant France Sa | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
FR2785614B1 (fr) | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
FR2792643B1 (fr) * | 1999-04-22 | 2001-07-27 | Clariant France Sa | Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique |
JP2002050594A (ja) * | 2000-08-04 | 2002-02-15 | Fuso Chemical Co Ltd | コロイド状シリカスラリー |
FR2819244B1 (fr) * | 2001-01-09 | 2003-04-11 | Clariant France Sa | Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications |
FR2819245B1 (fr) * | 2001-01-09 | 2004-11-26 | Clariant | Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications |
US6939203B2 (en) * | 2002-04-18 | 2005-09-06 | Asm Nutool, Inc. | Fluid bearing slide assembly for workpiece polishing |
ATE407096T1 (de) * | 2002-05-16 | 2008-09-15 | Micronit Microfluidics Bv | Verfahren zur herstellung eines mikrofluidischen bauteiles |
US20070286773A1 (en) * | 2002-05-16 | 2007-12-13 | Micronit Microfluidics B.V. | Microfluidic Device |
EP1369908A2 (de) * | 2002-06-03 | 2003-12-10 | Shipley Company LLC | Verfahren zur Abscheidung von pinholefreien organischen Polysiliziumdioxid Beschichtungen |
KR101004525B1 (ko) * | 2002-08-19 | 2010-12-31 | 호야 가부시키가이샤 | 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크 |
US20080220610A1 (en) * | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
KR101349983B1 (ko) * | 2006-09-13 | 2014-01-13 | 아사히 가라스 가부시키가이샤 | 반도체 집적 회로 장치용 연마제, 연마 방법 및 반도체 집적 회로 장치의 제조 방법 |
JP4411331B2 (ja) * | 2007-03-19 | 2010-02-10 | 信越化学工業株式会社 | 磁気記録媒体用シリコン基板およびその製造方法 |
WO2009041697A1 (ja) * | 2007-09-28 | 2009-04-02 | Nitta Haas Incorporated | 研磨用組成物 |
DE102011079694A1 (de) | 2011-07-25 | 2013-01-31 | Carl Zeiss Smt Gmbh | Verfahren zum Polieren einer Schicht aus amorphem Silizium |
CN107953225A (zh) * | 2016-10-14 | 2018-04-24 | 上海新昇半导体科技有限公司 | 半导体晶圆的抛光方法 |
CN114744065B (zh) * | 2022-03-23 | 2024-06-14 | 中国电子科技集团公司第十一研究所 | 台面结构芯片的非接触式光刻方法 |
Family Cites Families (19)
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US35420A (en) * | 1862-05-27 | And bdwaed joslin | ||
US2744001A (en) * | 1950-09-08 | 1956-05-01 | Rare Earths Inc | Polishing material and method of making same |
US2680721A (en) * | 1952-03-20 | 1954-06-08 | Du Pont | Process of increasing the size of unaggregated silica particles in an aqueous silicasuspension |
DE1072974B (de) * | 1955-12-22 | 1960-01-14 | Th B. F. Goodrich Company, New York, N. Y. (V. St. A.) | Verfahren zur Herstellung eines hellgefärbten bis weißen, Silicium und Sauerstoff enthaltenden Füllstoffs nach Patent 1 041 019 |
US3208823A (en) * | 1958-10-20 | 1965-09-28 | Philadelphia Quartz Co | Finely divided silica product and its method of preparation |
US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
US3440174A (en) * | 1965-04-26 | 1969-04-22 | Nalco Chemical Co | Method of making silica sols containing large particle size silica |
US3867304A (en) * | 1967-06-12 | 1975-02-18 | Nalco Chemical Co | Acidic stable salt-free silica sols |
US3715842A (en) * | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
DE2629709C2 (de) * | 1976-07-02 | 1982-06-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur Herstellung eines metallionenfreien amorphen Siliciumdioxids und daraus hergestelltes Poliermittel zum mechanischen Polieren von Halbleiteroberflächen |
US4435247A (en) * | 1983-03-10 | 1984-03-06 | International Business Machines Corporation | Method for polishing titanium carbide |
JPS61136909A (ja) * | 1984-12-04 | 1986-06-24 | Mitsubishi Chem Ind Ltd | 無水ケイ酸の水分散液組成物 |
EP0363100A3 (de) * | 1988-10-02 | 1990-05-23 | Canon Kabushiki Kaisha | Selektives Polierverfahren |
US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
JP2719113B2 (ja) * | 1994-05-24 | 1998-02-25 | 信越半導体株式会社 | 単結晶シリコンウェーハの歪付け方法 |
KR960041316A (ko) * | 1995-05-22 | 1996-12-19 | 고사이 아키오 | 연마용 입상체, 이의 제조방법 및 이의 용도 |
US5575706A (en) * | 1996-01-11 | 1996-11-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) apparatus and polish method |
DE19623062C2 (de) * | 1996-06-10 | 1998-07-02 | Bayer Ag | Verfahren zur Herstellung salzarmer Kieselsoldispersionen in niedrigsiedenden Alkoholen |
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
-
1997
- 1997-04-07 FR FR9704207A patent/FR2761629B1/fr not_active Expired - Lifetime
-
1998
- 1998-03-26 EP EP01101577A patent/EP1111023B1/de not_active Expired - Lifetime
- 1998-03-26 EP EP98400715A patent/EP0878838B1/de not_active Expired - Lifetime
- 1998-03-26 AT AT98400715T patent/ATE291277T1/de active
- 1998-03-26 DE DE69829329T patent/DE69829329T2/de not_active Expired - Lifetime
- 1998-03-26 AT AT01101577T patent/ATE527211T1/de active
- 1998-04-03 US US09/054,518 patent/US6126518A/en not_active Expired - Lifetime
- 1998-04-04 MY MYPI98001512A patent/MY119523A/en unknown
- 1998-04-06 JP JP9296598A patent/JP4233629B2/ja not_active Expired - Lifetime
- 1998-04-06 SG SG1998000701A patent/SG77633A1/en unknown
- 1998-04-06 KR KR10-1998-0012061A patent/KR100510951B1/ko not_active IP Right Cessation
- 1998-04-07 CN CNB98109693XA patent/CN1152416C/zh not_active Expired - Lifetime
-
1999
- 1999-08-10 HK HK99103450A patent/HK1018540A1/xx not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113045992A (zh) * | 2021-03-23 | 2021-06-29 | 广东精坚科技有限公司 | 一种中性抛光液及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
ATE291277T1 (de) | 2005-04-15 |
EP0878838B1 (de) | 2005-03-16 |
CN1152416C (zh) | 2004-06-02 |
FR2761629A1 (fr) | 1998-10-09 |
KR19980081128A (ko) | 1998-11-25 |
SG77633A1 (en) | 2001-01-16 |
EP0878838A2 (de) | 1998-11-18 |
EP0878838A3 (de) | 1998-12-16 |
EP1111023B1 (de) | 2011-10-05 |
JPH10308379A (ja) | 1998-11-17 |
EP1111023A3 (de) | 2008-01-23 |
DE69829329T2 (de) | 2006-04-13 |
FR2761629B1 (fr) | 1999-06-18 |
HK1018540A1 (en) | 1999-12-24 |
US6126518A (en) | 2000-10-03 |
CN1208248A (zh) | 1999-02-17 |
KR100510951B1 (ko) | 2005-11-21 |
DE69829329D1 (de) | 2005-04-21 |
MY119523A (en) | 2005-06-30 |
JP4233629B2 (ja) | 2009-03-04 |
EP1111023A2 (de) | 2001-06-27 |
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