ATE291277T1 - Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten - Google Patents

Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten

Info

Publication number
ATE291277T1
ATE291277T1 AT98400715T AT98400715T ATE291277T1 AT E291277 T1 ATE291277 T1 AT E291277T1 AT 98400715 T AT98400715 T AT 98400715T AT 98400715 T AT98400715 T AT 98400715T AT E291277 T1 ATE291277 T1 AT E291277T1
Authority
AT
Austria
Prior art keywords
chemical
mechanical polishing
silicon
semiconductive
suspension
Prior art date
Application number
AT98400715T
Other languages
English (en)
Inventor
Eric Jacquinot
Maurice Rivoire
Catherine Euvrard
Original Assignee
Clariant Finance Bvi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance Bvi Ltd filed Critical Clariant Finance Bvi Ltd
Application granted granted Critical
Publication of ATE291277T1 publication Critical patent/ATE291277T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
AT98400715T 1997-04-07 1998-03-26 Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten ATE291277T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9704207A FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Publications (1)

Publication Number Publication Date
ATE291277T1 true ATE291277T1 (de) 2005-04-15

Family

ID=9505584

Family Applications (2)

Application Number Title Priority Date Filing Date
AT98400715T ATE291277T1 (de) 1997-04-07 1998-03-26 Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten
AT01101577T ATE527211T1 (de) 1997-04-07 1998-03-26 Neutrale wassrige suspension von kolloidalen kieselsäure

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT01101577T ATE527211T1 (de) 1997-04-07 1998-03-26 Neutrale wassrige suspension von kolloidalen kieselsäure

Country Status (10)

Country Link
US (1) US6126518A (de)
EP (2) EP0878838B1 (de)
JP (1) JP4233629B2 (de)
KR (1) KR100510951B1 (de)
CN (1) CN1152416C (de)
AT (2) ATE291277T1 (de)
DE (1) DE69829329T2 (de)
FR (1) FR2761629B1 (de)
MY (1) MY119523A (de)
SG (1) SG77633A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2781922B1 (fr) 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP2002050594A (ja) * 2000-08-04 2002-02-15 Fuso Chemical Co Ltd コロイド状シリカスラリー
FR2819245B1 (fr) * 2001-01-09 2004-11-26 Clariant Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
FR2819244B1 (fr) * 2001-01-09 2003-04-11 Clariant France Sa Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
US6939203B2 (en) * 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
EP1997772A3 (de) * 2002-05-16 2011-01-26 Micronit Microfluidics B.V. Verfahren zur Herstellung einer Mikrofluid-Vorrichtung
US20070286773A1 (en) * 2002-05-16 2007-12-13 Micronit Microfluidics B.V. Microfluidic Device
EP1369908A2 (de) * 2002-06-03 2003-12-10 Shipley Company LLC Verfahren zur Abscheidung von pinholefreien organischen Polysiliziumdioxid Beschichtungen
KR101004525B1 (ko) * 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
JP5157908B2 (ja) * 2006-09-13 2013-03-06 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
WO2009041697A1 (ja) * 2007-09-28 2009-04-02 Nitta Haas Incorporated 研磨用組成物
DE102011079694A1 (de) 2011-07-25 2013-01-31 Carl Zeiss Smt Gmbh Verfahren zum Polieren einer Schicht aus amorphem Silizium
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
JP7528681B2 (ja) * 2020-09-29 2024-08-06 住友金属鉱山株式会社 ＳｉＣ多結晶基板の研磨方法
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法

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US35420A (en) * 1862-05-27 And bdwaed joslin
US2744001A (en) * 1950-09-08 1956-05-01 Rare Earths Inc Polishing material and method of making same
US2680721A (en) * 1952-03-20 1954-06-08 Du Pont Process of increasing the size of unaggregated silica particles in an aqueous silicasuspension
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US3208823A (en) * 1958-10-20 1965-09-28 Philadelphia Quartz Co Finely divided silica product and its method of preparation
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3440174A (en) * 1965-04-26 1969-04-22 Nalco Chemical Co Method of making silica sols containing large particle size silica
US3867304A (en) * 1967-06-12 1975-02-18 Nalco Chemical Co Acidic stable salt-free silica sols
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
DE2629709C2 (de) * 1976-07-02 1982-06-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines metallionenfreien amorphen Siliciumdioxids und daraus hergestelltes Poliermittel zum mechanischen Polieren von Halbleiteroberflächen
US4435247A (en) * 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
JPH02209730A (ja) * 1988-10-02 1990-08-21 Canon Inc 選択研磨法
USRE35420E (en) 1991-02-11 1997-01-07 Micron Technology, Inc. Method of increasing capacitance by surface roughening in semiconductor wafer processing
US5395801A (en) * 1993-09-29 1995-03-07 Micron Semiconductor, Inc. Chemical-mechanical polishing processes of planarizing insulating layers
JP2719113B2 (ja) * 1994-05-24 1998-02-25 信越半導体株式会社 単結晶シリコンウェーハの歪付け方法
KR960041316A (ko) * 1995-05-22 1996-12-19 고사이 아키오 연마용 입상체, 이의 제조방법 및 이의 용도
US5575706A (en) * 1996-01-11 1996-11-19 Taiwan Semiconductor Manufacturing Company Ltd. Chemical/mechanical planarization (CMP) apparatus and polish method
DE19623062C2 (de) * 1996-06-10 1998-07-02 Bayer Ag Verfahren zur Herstellung salzarmer Kieselsoldispersionen in niedrigsiedenden Alkoholen
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride

Also Published As

Publication number Publication date
EP0878838A2 (de) 1998-11-18
EP1111023A2 (de) 2001-06-27
SG77633A1 (en) 2001-01-16
ATE527211T1 (de) 2011-10-15
CN1208248A (zh) 1999-02-17
EP1111023A3 (de) 2008-01-23
DE69829329D1 (de) 2005-04-21
JPH10308379A (ja) 1998-11-17
EP0878838A3 (de) 1998-12-16
US6126518A (en) 2000-10-03
DE69829329T2 (de) 2006-04-13
JP4233629B2 (ja) 2009-03-04
FR2761629B1 (fr) 1999-06-18
HK1018540A1 (en) 1999-12-24
FR2761629A1 (fr) 1998-10-09
KR100510951B1 (ko) 2005-11-21
KR19980081128A (ko) 1998-11-25
EP0878838B1 (de) 2005-03-16
CN1152416C (zh) 2004-06-02
EP1111023B1 (de) 2011-10-05
MY119523A (en) 2005-06-30

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