ATE302830T1 - Poliermittel und verfahren zur herstellung planarer schichten - Google Patents
Poliermittel und verfahren zur herstellung planarer schichtenInfo
- Publication number
- ATE302830T1 ATE302830T1 AT01929438T AT01929438T ATE302830T1 AT E302830 T1 ATE302830 T1 AT E302830T1 AT 01929438 T AT01929438 T AT 01929438T AT 01929438 T AT01929438 T AT 01929438T AT E302830 T1 ATE302830 T1 AT E302830T1
- Authority
- AT
- Austria
- Prior art keywords
- particles
- atoms
- polishing agent
- polishing
- planar layers
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000002245 particle Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10016020 | 2000-03-31 | ||
| DE10063870A DE10063870A1 (de) | 2000-03-31 | 2000-12-21 | Poliermittel und Verfahren zur Herstellung planarer Schichten |
| PCT/EP2001/003113 WO2001074958A2 (de) | 2000-03-31 | 2001-03-19 | Poliermittel und verfahren zur herstellung planarer schichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE302830T1 true ATE302830T1 (de) | 2005-09-15 |
Family
ID=26005114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01929438T ATE302830T1 (de) | 2000-03-31 | 2001-03-19 | Poliermittel und verfahren zur herstellung planarer schichten |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20030061766A1 (enExample) |
| EP (1) | EP1274807B1 (enExample) |
| JP (1) | JP2003529662A (enExample) |
| CN (1) | CN1240797C (enExample) |
| AT (1) | ATE302830T1 (enExample) |
| AU (1) | AU2001256208A1 (enExample) |
| IL (1) | IL151794A0 (enExample) |
| TW (1) | TW526250B (enExample) |
| WO (1) | WO2001074958A2 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10152993A1 (de) * | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
| US6884144B2 (en) | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
| TWI307712B (en) * | 2002-08-28 | 2009-03-21 | Kao Corp | Polishing composition |
| JP2004128069A (ja) * | 2002-09-30 | 2004-04-22 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
| US20050056810A1 (en) * | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
| JPWO2005029563A1 (ja) * | 2003-09-24 | 2007-11-15 | 日本化学工業株式会社 | シリコンウエハ研磨用組成物および研磨方法 |
| ATE463838T1 (de) * | 2003-09-30 | 2010-04-15 | Fujimi Inc | Polierzusammensetzung und polierverfahren |
| JP4291665B2 (ja) * | 2003-10-15 | 2009-07-08 | 日本化学工業株式会社 | 珪酸質材料用研磨剤組成物およびそれを用いた研磨方法 |
| US7470295B2 (en) * | 2004-03-12 | 2008-12-30 | K.C. Tech Co., Ltd. | Polishing slurry, method of producing same, and method of polishing substrate |
| DE602005023557D1 (de) * | 2004-04-12 | 2010-10-28 | Jsr Corp | Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren |
| TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
| US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
| JP4852302B2 (ja) * | 2004-12-01 | 2012-01-11 | 信越半導体株式会社 | 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法 |
| US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
| US20100146864A1 (en) * | 2005-08-10 | 2010-06-17 | Catalysts & Chemicals Industries Co., Ltd | Nodular Silica Sol and Method of Producing the Same |
| CN1955249B (zh) * | 2005-10-28 | 2012-07-25 | 安集微电子（上海）有限公司 | 用于钽阻挡层的化学机械抛光浆料 |
| JP4963825B2 (ja) * | 2005-11-16 | 2012-06-27 | 日揮触媒化成株式会社 | 研磨用シリカゾルおよびそれを含有してなる研磨用組成物 |
| TW200734436A (en) * | 2006-01-30 | 2007-09-16 | Fujifilm Corp | Metal-polishing liquid and chemical mechanical polishing method using the same |
| JP2007214518A (ja) * | 2006-02-13 | 2007-08-23 | Fujifilm Corp | 金属用研磨液 |
| US7902072B2 (en) * | 2006-02-28 | 2011-03-08 | Fujifilm Corporation | Metal-polishing composition and chemical-mechanical polishing method |
| JP5289687B2 (ja) * | 2006-06-22 | 2013-09-11 | 株式会社アドマテックス | 研磨材用砥粒及びその製造方法、並びに研磨材 |
| DE102006046619A1 (de) * | 2006-09-29 | 2008-04-03 | Heraeus Quarzglas Gmbh & Co. Kg | Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers |
| CN101611476B (zh) * | 2007-02-27 | 2015-11-25 | 日立化成株式会社 | 金属用研磨液以及研磨方法 |
| JP5329786B2 (ja) * | 2007-08-31 | 2013-10-30 | 株式会社東芝 | 研磨液および半導体装置の製造方法 |
| PT103838B (pt) * | 2007-09-28 | 2008-11-03 | Cuf Companhia Uniao Fabril Sgp | Óxidos cerâmicos esféricos nanocristalinos, processo para a sua síntese e respectivas utilizações |
| JP5236283B2 (ja) * | 2007-12-28 | 2013-07-17 | 花王株式会社 | ハードディスク基板用研磨液組成物 |
| WO2010052983A1 (ja) * | 2008-11-10 | 2010-05-14 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
| CN101838503B (zh) * | 2010-02-26 | 2014-06-25 | 佛山市柯林瓷砖护理用品有限公司 | 抛光砖、石材、人造石翻新用抛光剂 |
| CN102533117A (zh) * | 2010-12-13 | 2012-07-04 | 安集微电子（上海）有限公司 | 一种用于3d封装tsv硅抛光的化学机械抛光液 |
| US20120264303A1 (en) * | 2011-04-15 | 2012-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing slurry, system and method |
| TWI619805B (zh) | 2011-11-08 | 2018-04-01 | 福吉米股份有限公司 | 用於硬脆材料之研磨用組成物、硬脆材料基板之研磨方法及製造方法 |
| WO2013077369A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
| KR101480179B1 (ko) * | 2011-12-30 | 2015-01-09 | 제일모직주식회사 | Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| WO2013157442A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN102796460B (zh) * | 2012-08-31 | 2014-05-07 | 安特迪（天津）科技有限公司 | 一种二氧化硅基cmp抛光液及其制备方法 |
| ES2712802T3 (es) * | 2013-04-17 | 2019-05-14 | Silbond Corp | Método de preparación de un sol de sílice |
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| JP6506913B2 (ja) * | 2014-03-31 | 2019-04-24 | ニッタ・ハース株式会社 | 研磨用組成物及び研磨方法 |
| JP6316680B2 (ja) * | 2014-06-30 | 2018-04-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| JP2016155900A (ja) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法及び硬脆材料基板の製造方法 |
| JP6436018B2 (ja) * | 2015-08-28 | 2018-12-12 | 住友金属鉱山株式会社 | 酸化物単結晶基板の研磨スラリー及びその製造方法 |
| US11400458B2 (en) * | 2018-06-08 | 2022-08-02 | Green Coal Technologies (Pty.) Ltd. | Process and equipment assembly for beneficiation of coal discards |
| SG10201904669TA (en) * | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
| CN115116842B (zh) * | 2022-02-19 | 2024-10-29 | 上海钧乾智造科技有限公司 | 含全氟取代基的聚乙烯胺共聚物在单晶硅片碱抛光中的应用 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0773270B1 (en) * | 1995-11-10 | 2001-01-24 | Tokuyama Corporation | Polishing slurries and a process for the production thereof |
| FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
| US6143662A (en) * | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
| JP4105838B2 (ja) * | 1999-03-31 | 2008-06-25 | 株式会社トクヤマ | 研磨剤及び研磨方法 |
| US6293848B1 (en) * | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
-
2001
- 2001-03-19 CN CNB018074324A patent/CN1240797C/zh not_active Expired - Fee Related
- 2001-03-19 IL IL15179401A patent/IL151794A0/xx unknown
- 2001-03-19 US US10/239,464 patent/US20030061766A1/en not_active Abandoned
- 2001-03-19 AU AU2001256208A patent/AU2001256208A1/en not_active Abandoned
- 2001-03-19 AT AT01929438T patent/ATE302830T1/de not_active IP Right Cessation
- 2001-03-19 WO PCT/EP2001/003113 patent/WO2001074958A2/de not_active Ceased
- 2001-03-19 JP JP2001572637A patent/JP2003529662A/ja active Pending
- 2001-03-19 EP EP01929438A patent/EP1274807B1/de not_active Expired - Lifetime
- 2001-03-26 TW TW090107018A patent/TW526250B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| AU2001256208A1 (en) | 2001-10-15 |
| EP1274807B1 (de) | 2005-08-24 |
| CN1240797C (zh) | 2006-02-08 |
| WO2001074958A3 (de) | 2002-02-28 |
| HK1056194A1 (en) | 2004-02-06 |
| TW526250B (en) | 2003-04-01 |
| WO2001074958A2 (de) | 2001-10-11 |
| EP1274807A2 (de) | 2003-01-15 |
| JP2003529662A (ja) | 2003-10-07 |
| CN1420917A (zh) | 2003-05-28 |
| US20030061766A1 (en) | 2003-04-03 |
| IL151794A0 (en) | 2003-04-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REN | Ceased due to non-payment of the annual fee |