JP2003529662A5 - - Google Patents
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- Publication number
- JP2003529662A5 JP2003529662A5 JP2001572637A JP2001572637A JP2003529662A5 JP 2003529662 A5 JP2003529662 A5 JP 2003529662A5 JP 2001572637 A JP2001572637 A JP 2001572637A JP 2001572637 A JP2001572637 A JP 2001572637A JP 2003529662 A5 JP2003529662 A5 JP 2003529662A5
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- silica particles
- weight
- size
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005296 abrasive Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 230000002902 bimodal Effects 0.000 description 1
Description
【特許請求の範囲】
【請求項１】 互いにボンドによって連結していない球形の、分離したシリカ粒子を含む研磨剤であって、
ａ）寸法５−５０ｎｍのシリカ粒子５−９５重量％、及び
ｂ）寸法５０−２００ｎｍのシリカ粒子９５−５重量％
を含む、但し粒子の全体がバイモ−ダルの粒径分布を有する、
研磨剤。
【請求項１】 互いにボンドによって連結していない球形の、分離したシリカ粒子を含む研磨剤であって、
ａ）寸法５−５０ｎｍのシリカ粒子５−９５重量％、及び
ｂ）寸法５０−２００ｎｍのシリカ粒子９５−５重量％
を含む、但し粒子の全体がバイモ−ダルの粒径分布を有する、
研磨剤。
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10016020.4 | 2000-03-31 | ||
| DE10016020 | 2000-03-31 | ||
| DE10063870.8 | 2000-12-21 | ||
| DE10063870A DE10063870A1 (de) | 2000-03-31 | 2000-12-21 | Poliermittel und Verfahren zur Herstellung planarer Schichten |
| PCT/EP2001/003113 WO2001074958A2 (de) | 2000-03-31 | 2001-03-19 | Poliermittel und verfahren zur herstellung planarer schichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003529662A JP2003529662A (ja) | 2003-10-07 |
| JP2003529662A5 true JP2003529662A5 (ja) | 2008-06-19 |
Family
ID=26005114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001572637A Pending JP2003529662A (ja) | 2000-03-31 | 2001-03-19 | 研磨剤ならびに平面層の製造法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20030061766A1 (ja) |
| EP (1) | EP1274807B1 (ja) |
| JP (1) | JP2003529662A (ja) |
| CN (1) | CN1240797C (ja) |
| AT (1) | ATE302830T1 (ja) |
| AU (1) | AU2001256208A1 (ja) |
| HK (1) | HK1056194A1 (ja) |
| IL (1) | IL151794A0 (ja) |
| TW (1) | TW526250B (ja) |
| WO (1) | WO2001074958A2 (ja) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10152993A1 (de) * | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
| US6884144B2 (en) | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
| TWI307712B (en) * | 2002-08-28 | 2009-03-21 | Kao Corp | Polishing composition |
| JP2004128069A (ja) * | 2002-09-30 | 2004-04-22 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
| US20050056810A1 (en) * | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
| JPWO2005029563A1 (ja) * | 2003-09-24 | 2007-11-15 | 日本化学工業株式会社 | シリコンウエハ研磨用組成物および研磨方法 |
| EP1670047B1 (en) * | 2003-09-30 | 2010-04-07 | Fujimi Incorporated | Polishing composition and polishing method |
| JP4291665B2 (ja) * | 2003-10-15 | 2009-07-08 | 日本化学工業株式会社 | 珪酸質材料用研磨剤組成物およびそれを用いた研磨方法 |
| US7470295B2 (en) * | 2004-03-12 | 2008-12-30 | K.C. Tech Co., Ltd. | Polishing slurry, method of producing same, and method of polishing substrate |
| EP1586614B1 (en) * | 2004-04-12 | 2010-09-15 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| TWI283008B (en) * | 2004-05-11 | 2007-06-21 | K C Tech Co Ltd | Slurry for CMP and method of producing the same |
| US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
| JP4852302B2 (ja) * | 2004-12-01 | 2012-01-11 | 信越半導体株式会社 | 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法 |
| US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
| US20100146864A1 (en) * | 2005-08-10 | 2010-06-17 | Catalysts & Chemicals Industries Co., Ltd | Nodular Silica Sol and Method of Producing the Same |
| CN1955249B (zh) * | 2005-10-28 | 2012-07-25 | 安集微电子（上海）有限公司 | 用于钽阻挡层的化学机械抛光浆料 |
| JP4963825B2 (ja) * | 2005-11-16 | 2012-06-27 | 日揮触媒化成株式会社 | 研磨用シリカゾルおよびそれを含有してなる研磨用組成物 |
| TW200734436A (en) * | 2006-01-30 | 2007-09-16 | Fujifilm Corp | Metal-polishing liquid and chemical mechanical polishing method using the same |
| JP2007214518A (ja) * | 2006-02-13 | 2007-08-23 | Fujifilm Corp | 金属用研磨液 |
| US7902072B2 (en) * | 2006-02-28 | 2011-03-08 | Fujifilm Corporation | Metal-polishing composition and chemical-mechanical polishing method |
| JP5289687B2 (ja) * | 2006-06-22 | 2013-09-11 | 株式会社アドマテックス | 研磨材用砥粒及びその製造方法、並びに研磨材 |
| DE102006046619A1 (de) * | 2006-09-29 | 2008-04-03 | Heraeus Quarzglas Gmbh & Co. Kg | Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers |
| US8821750B2 (en) | 2007-02-27 | 2014-09-02 | Hitachi Chemical Co., Ltd. | Metal polishing slurry and polishing method |
| JP5329786B2 (ja) * | 2007-08-31 | 2013-10-30 | 株式会社東芝 | 研磨液および半導体装置の製造方法 |
| PT103838B (pt) * | 2007-09-28 | 2008-11-03 | Cuf Companhia Uniao Fabril Sgp | Óxidos cerâmicos esféricos nanocristalinos, processo para a sua síntese e respectivas utilizações |
| JP5236283B2 (ja) * | 2007-12-28 | 2013-07-17 | 花王株式会社 | ハードディスク基板用研磨液組成物 |
| TWI457423B (zh) * | 2008-11-10 | 2014-10-21 | Asahi Glass Co Ltd | A polishing composition, and a method for manufacturing a semiconductor integrated circuit device |
| CN101838503B (zh) * | 2010-02-26 | 2014-06-25 | 佛山市柯林瓷砖护理用品有限公司 | 抛光砖、石材、人造石翻新用抛光剂 |
| CN102533117A (zh) * | 2010-12-13 | 2012-07-04 | 安集微电子（上海）有限公司 | 一种用于3d封装tsv硅抛光的化学机械抛光液 |
| US20120264303A1 (en) * | 2011-04-15 | 2012-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing slurry, system and method |
| JPWO2013069623A1 (ja) | 2011-11-08 | 2015-04-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2013077369A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
| KR101480179B1 (ko) * | 2011-12-30 | 2015-01-09 | 제일모직주식회사 | Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| KR20150014924A (ko) * | 2012-04-18 | 2015-02-09 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| CN102796460B (zh) * | 2012-08-31 | 2014-05-07 | 安特迪（天津）科技有限公司 | 一种二氧化硅基cmp抛光液及其制备方法 |
| JP6483089B2 (ja) * | 2013-04-17 | 2019-03-13 | シルボンド・コーポレイションＳｉｌｂｏｎｄ Ｃｏｒｐｏｒａｔｉｏｎ | コロイドゾルとその製造方法 |
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| JP6506913B2 (ja) * | 2014-03-31 | 2019-04-24 | ニッタ・ハース株式会社 | 研磨用組成物及び研磨方法 |
| JP6316680B2 (ja) * | 2014-06-30 | 2018-04-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| JP2016155900A (ja) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法及び硬脆材料基板の製造方法 |
| JP6436018B2 (ja) * | 2015-08-28 | 2018-12-12 | 住友金属鉱山株式会社 | 酸化物単結晶基板の研磨スラリー及びその製造方法 |
| AU2019280185B2 (en) * | 2018-06-08 | 2024-05-30 | Green Coal Technologies Proprietary Limited | Process and equipment assembly for beneficiation of coal discards |
| SG10201904669TA (en) | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69611653T2 (de) * | 1995-11-10 | 2001-05-03 | Tokuyama Corp | Poliersuspensionen und Verfahren zu ihrer Herstellung |
| FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
| US6143662A (en) * | 1998-02-18 | 2000-11-07 | Rodel Holdings, Inc. | Chemical mechanical polishing composition and method of polishing a substrate |
| JP4105838B2 (ja) * | 1999-03-31 | 2008-06-25 | 株式会社トクヤマ | 研磨剤及び研磨方法 |
| US6293848B1 (en) * | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
-
2001
- 2001-03-19 AU AU2001256208A patent/AU2001256208A1/en not_active Abandoned
- 2001-03-19 US US10/239,464 patent/US20030061766A1/en not_active Abandoned
- 2001-03-19 WO PCT/EP2001/003113 patent/WO2001074958A2/de active IP Right Grant
- 2001-03-19 IL IL15179401A patent/IL151794A0/xx unknown
- 2001-03-19 JP JP2001572637A patent/JP2003529662A/ja active Pending
- 2001-03-19 AT AT01929438T patent/ATE302830T1/de not_active IP Right Cessation
- 2001-03-19 EP EP01929438A patent/EP1274807B1/de not_active Expired - Lifetime
- 2001-03-19 CN CNB018074324A patent/CN1240797C/zh not_active Expired - Fee Related
- 2001-03-26 TW TW090107018A patent/TW526250B/zh not_active IP Right Cessation
-
2003
- 2003-11-21 HK HK03108503A patent/HK1056194A1/xx not_active IP Right Cessation
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