JP2003526915A - Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法 - Google Patents

Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法

Info

Publication number
JP2003526915A
JP2003526915A JP2001566166A JP2001566166A JP2003526915A JP 2003526915 A JP2003526915 A JP 2003526915A JP 2001566166 A JP2001566166 A JP 2001566166A JP 2001566166 A JP2001566166 A JP 2001566166A JP 2003526915 A JP2003526915 A JP 2003526915A
Authority
JP
Japan
Prior art keywords
region
oxide layer
layer
memory cell
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001566166A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003526915A5 (enExample
Inventor
ミカエル・ケイ．・ハン
ハオ・ファン
政昭 東谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Advanced Micro Devices Inc
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Publication of JP2003526915A publication Critical patent/JP2003526915A/ja
Publication of JP2003526915A5 publication Critical patent/JP2003526915A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2001566166A 2000-03-09 2001-03-05 Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法 Pending JP2003526915A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/522,247 2000-03-09
US09/522,247 US6429479B1 (en) 2000-03-09 2000-03-09 Nand flash memory with specified gate oxide thickness
PCT/US2001/040259 WO2001067490A2 (en) 2000-03-09 2001-03-05 Single tunnel gate oxidation process for fabricating nand flash memory

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007229585A Division JP2008022025A (ja) 2000-03-09 2007-09-04 Ｎａｎｄフラッシュ・メモリの製造方法
JP2010224726A Division JP2011018939A (ja) 2000-03-09 2010-10-04 Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法

Publications (2)

Publication Number Publication Date
JP2003526915A true JP2003526915A (ja) 2003-09-09
JP2003526915A5 JP2003526915A5 (enExample) 2008-01-24

Family

ID=24080079

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2001566166A Pending JP2003526915A (ja) 2000-03-09 2001-03-05 Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法
JP2007229585A Pending JP2008022025A (ja) 2000-03-09 2007-09-04 Ｎａｎｄフラッシュ・メモリの製造方法
JP2010224726A Pending JP2011018939A (ja) 2000-03-09 2010-10-04 Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2007229585A Pending JP2008022025A (ja) 2000-03-09 2007-09-04 Ｎａｎｄフラッシュ・メモリの製造方法
JP2010224726A Pending JP2011018939A (ja) 2000-03-09 2010-10-04 Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法

Country Status (7)

Country Link
US (1) US6429479B1 (enExample)
EP (1) EP1261987A2 (enExample)
JP (3) JP2003526915A (enExample)
KR (1) KR20020086628A (enExample)
CN (1) CN1198322C (enExample)
TW (1) TW479284B (enExample)
WO (1) WO2001067490A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device
JP2005268621A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 半導体集積回路装置
DE602004032455D1 (de) * 2004-12-15 2011-06-09 St Microelectronics Srl Ein nichtflüchtiger Speicher mit Unterstützung von hochparallelem Test auf Waferebene
KR100673229B1 (ko) 2005-07-04 2007-01-22 주식회사 하이닉스반도체 낸드형 플래시 메모리 소자 및 그것의 제조방법
JP2008187051A (ja) * 2007-01-30 2008-08-14 Toshiba Corp 半導体記憶装置
US20090141554A1 (en) * 2007-11-30 2009-06-04 Atmel Corporation Memory device having small array area
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07302499A (ja) * 1994-05-07 1995-11-14 Samsung Electron Co Ltd 電気的消去可能でプログラム可能なリードオンリメモリ
JPH1041487A (ja) * 1996-03-26 1998-02-13 Samsung Electron Co Ltd Ｎａｎｄ型不揮発性メモリ素子、その製造方法及び駆動方法
WO1999054931A1 (en) * 1998-04-16 1999-10-28 Advanced Micro Devices, Inc. Elimination of poly cap for easy poly1 contact for nand floating gate memory
JPH11330424A (ja) * 1998-05-11 1999-11-30 Sony Corp Ｎａｎｄストリング型不揮発性半導体メモリセル及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
JPH0760864B2 (ja) * 1984-07-13 1995-06-28 株式会社日立製作所 半導体集積回路装置
JP3184045B2 (ja) * 1994-06-17 2001-07-09 株式会社東芝 不揮発性半導体メモリ
JP3808569B2 (ja) * 1996-11-14 2006-08-16 三星電子株式会社 不揮発性メモリ装置
JPH10209405A (ja) * 1996-11-20 1998-08-07 Sony Corp 半導体不揮発性記憶装置
JP2000003970A (ja) * 1997-12-05 2000-01-07 Sony Corp 不揮発性半導体記憶装置およびその書き込み電圧の印加方法
KR100264816B1 (ko) * 1998-03-26 2000-09-01 윤종용 비휘발성 메모리 장치 및 그 동작 방법
JP3144552B2 (ja) * 1998-04-16 2001-03-12 松下電器産業株式会社 不揮発性半導体記憶装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07302499A (ja) * 1994-05-07 1995-11-14 Samsung Electron Co Ltd 電気的消去可能でプログラム可能なリードオンリメモリ
JPH1041487A (ja) * 1996-03-26 1998-02-13 Samsung Electron Co Ltd Ｎａｎｄ型不揮発性メモリ素子、その製造方法及び駆動方法
WO1999054931A1 (en) * 1998-04-16 1999-10-28 Advanced Micro Devices, Inc. Elimination of poly cap for easy poly1 contact for nand floating gate memory
JP2002512450A (ja) * 1998-04-16 2002-04-23 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ポリキャップの除去により容易なポリ１コンタクトが得られるｎａｎｄ型フラッシュメモリ装置の製造方法
JPH11330424A (ja) * 1998-05-11 1999-11-30 Sony Corp Ｎａｎｄストリング型不揮発性半導体メモリセル及びその製造方法

Also Published As

Publication number Publication date
US6429479B1 (en) 2002-08-06
CN1416592A (zh) 2003-05-07
EP1261987A2 (en) 2002-12-04
JP2008022025A (ja) 2008-01-31
JP2011018939A (ja) 2011-01-27
CN1198322C (zh) 2005-04-20
TW479284B (en) 2002-03-11
WO2001067490A2 (en) 2001-09-13
KR20020086628A (ko) 2002-11-18
WO2001067490A3 (en) 2002-06-27

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