KR20020086628A - Ｎａｎｄ 플래시 메모리를 제조하기 위한 단일 터널게이트 산화 공정 - Google Patents

Ｎａｎｄ 플래시 메모리를 제조하기 위한 단일 터널게이트 산화 공정 Download PDF

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Publication number
KR20020086628A
KR20020086628A KR1020027011819A KR20027011819A KR20020086628A KR 20020086628 A KR20020086628 A KR 20020086628A KR 1020027011819 A KR1020027011819 A KR 1020027011819A KR 20027011819 A KR20027011819 A KR 20027011819A KR 20020086628 A KR20020086628 A KR 20020086628A
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KR
South Korea
Prior art keywords
region
layer
oxide layer
gate
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020027011819A
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English (en)
Korean (ko)
Inventor
한케이.마이클
팡하오
히가시타니마사키
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
후지쯔 가부시끼가이샤
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Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드, 후지쯔 가부시끼가이샤 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20020086628A publication Critical patent/KR20020086628A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020027011819A 2000-03-09 2001-03-05 Ｎａｎｄ 플래시 메모리를 제조하기 위한 단일 터널게이트 산화 공정 Ceased KR20020086628A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/522,247 2000-03-09
US09/522,247 US6429479B1 (en) 2000-03-09 2000-03-09 Nand flash memory with specified gate oxide thickness
PCT/US2001/040259 WO2001067490A2 (en) 2000-03-09 2001-03-05 Single tunnel gate oxidation process for fabricating nand flash memory

Publications (1)

Publication Number Publication Date
KR20020086628A true KR20020086628A (ko) 2002-11-18

Family

ID=24080079

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027011819A Ceased KR20020086628A (ko) 2000-03-09 2001-03-05 Ｎａｎｄ 플래시 메모리를 제조하기 위한 단일 터널게이트 산화 공정

Country Status (7)

Country Link
US (1) US6429479B1 (enExample)
EP (1) EP1261987A2 (enExample)
JP (3) JP2003526915A (enExample)
KR (1) KR20020086628A (enExample)
CN (1) CN1198322C (enExample)
TW (1) TW479284B (enExample)
WO (1) WO2001067490A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device
JP2005268621A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 半導体集積回路装置
DE602004032455D1 (de) * 2004-12-15 2011-06-09 St Microelectronics Srl Ein nichtflüchtiger Speicher mit Unterstützung von hochparallelem Test auf Waferebene
KR100673229B1 (ko) 2005-07-04 2007-01-22 주식회사 하이닉스반도체 낸드형 플래시 메모리 소자 및 그것의 제조방법
JP2008187051A (ja) * 2007-01-30 2008-08-14 Toshiba Corp 半導体記憶装置
US20090141554A1 (en) * 2007-11-30 2009-06-04 Atmel Corporation Memory device having small array area
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
JPH0760864B2 (ja) * 1984-07-13 1995-06-28 株式会社日立製作所 半導体集積回路装置
KR960016803B1 (ko) 1994-05-07 1996-12-21 삼성전자 주식회사 불휘발성 반도체 메모리장치
JP3184045B2 (ja) * 1994-06-17 2001-07-09 株式会社東芝 不揮発性半導体メモリ
KR100207504B1 (ko) 1996-03-26 1999-07-15 윤종용 불휘발성 메모리소자, 그 제조방법 및 구동방법
JP3808569B2 (ja) * 1996-11-14 2006-08-16 三星電子株式会社 不揮発性メモリ装置
JPH10209405A (ja) * 1996-11-20 1998-08-07 Sony Corp 半導体不揮発性記憶装置
JP2000003970A (ja) * 1997-12-05 2000-01-07 Sony Corp 不揮発性半導体記憶装置およびその書き込み電圧の印加方法
KR100264816B1 (ko) * 1998-03-26 2000-09-01 윤종용 비휘발성 메모리 장치 및 그 동작 방법
JP3144552B2 (ja) * 1998-04-16 2001-03-12 松下電器産業株式会社 不揮発性半導体記憶装置の製造方法
US6057193A (en) * 1998-04-16 2000-05-02 Advanced Micro Devices, Inc. Elimination of poly cap for easy poly1 contact for NAND product
JPH11330424A (ja) * 1998-05-11 1999-11-30 Sony Corp Ｎａｎｄストリング型不揮発性半導体メモリセル及びその製造方法

Also Published As

Publication number Publication date
US6429479B1 (en) 2002-08-06
CN1416592A (zh) 2003-05-07
EP1261987A2 (en) 2002-12-04
JP2008022025A (ja) 2008-01-31
JP2011018939A (ja) 2011-01-27
JP2003526915A (ja) 2003-09-09
CN1198322C (zh) 2005-04-20
TW479284B (en) 2002-03-11
WO2001067490A2 (en) 2001-09-13
WO2001067490A3 (en) 2002-06-27

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