TW479284B - Single tunnel gate oxidation process for fabricating nand flash memory - Google Patents
Single tunnel gate oxidation process for fabricating nand flash memory Download PDFInfo
- Publication number
- TW479284B TW479284B TW090105267A TW90105267A TW479284B TW 479284 B TW479284 B TW 479284B TW 090105267 A TW090105267 A TW 090105267A TW 90105267 A TW90105267 A TW 90105267A TW 479284 B TW479284 B TW 479284B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide layer
- region
- gate
- layer
- memory cell
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000003647 oxidation Effects 0.000 title abstract description 14
- 238000007254 oxidation reaction Methods 0.000 title abstract description 14
- 230000008569 process Effects 0.000 title abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 2
- 239000007943 implant Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/522,247 US6429479B1 (en) | 2000-03-09 | 2000-03-09 | Nand flash memory with specified gate oxide thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW479284B true TW479284B (en) | 2002-03-11 |
Family
ID=24080079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090105267A TW479284B (en) | 2000-03-09 | 2001-03-07 | Single tunnel gate oxidation process for fabricating nand flash memory |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6429479B1 (enExample) |
| EP (1) | EP1261987A2 (enExample) |
| JP (3) | JP2003526915A (enExample) |
| KR (1) | KR20020086628A (enExample) |
| CN (1) | CN1198322C (enExample) |
| TW (1) | TW479284B (enExample) |
| WO (1) | WO2001067490A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8108588B2 (en) * | 2003-04-16 | 2012-01-31 | Sandisk Il Ltd. | Monolithic read-while-write flash memory device |
| JP2005268621A (ja) * | 2004-03-19 | 2005-09-29 | Toshiba Corp | 半導体集積回路装置 |
| DE602004032455D1 (de) * | 2004-12-15 | 2011-06-09 | St Microelectronics Srl | Ein nichtflüchtiger Speicher mit Unterstützung von hochparallelem Test auf Waferebene |
| KR100673229B1 (ko) | 2005-07-04 | 2007-01-22 | 주식회사 하이닉스반도체 | 낸드형 플래시 메모리 소자 및 그것의 제조방법 |
| JP2008187051A (ja) * | 2007-01-30 | 2008-08-14 | Toshiba Corp | 半導体記憶装置 |
| US20090141554A1 (en) * | 2007-11-30 | 2009-06-04 | Atmel Corporation | Memory device having small array area |
| US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407058A (en) * | 1981-05-22 | 1983-10-04 | International Business Machines Corporation | Method of making dense vertical FET's |
| JPH0760864B2 (ja) * | 1984-07-13 | 1995-06-28 | 株式会社日立製作所 | 半導体集積回路装置 |
| KR960016803B1 (ko) | 1994-05-07 | 1996-12-21 | 삼성전자 주식회사 | 불휘발성 반도체 메모리장치 |
| JP3184045B2 (ja) * | 1994-06-17 | 2001-07-09 | 株式会社東芝 | 不揮発性半導体メモリ |
| KR100207504B1 (ko) | 1996-03-26 | 1999-07-15 | 윤종용 | 불휘발성 메모리소자, 그 제조방법 및 구동방법 |
| JP3808569B2 (ja) * | 1996-11-14 | 2006-08-16 | 三星電子株式会社 | 不揮発性メモリ装置 |
| JPH10209405A (ja) * | 1996-11-20 | 1998-08-07 | Sony Corp | 半導体不揮発性記憶装置 |
| JP2000003970A (ja) * | 1997-12-05 | 2000-01-07 | Sony Corp | 不揮発性半導体記憶装置およびその書き込み電圧の印加方法 |
| KR100264816B1 (ko) * | 1998-03-26 | 2000-09-01 | 윤종용 | 비휘발성 메모리 장치 및 그 동작 방법 |
| JP3144552B2 (ja) * | 1998-04-16 | 2001-03-12 | 松下電器産業株式会社 | 不揮発性半導体記憶装置の製造方法 |
| US6057193A (en) * | 1998-04-16 | 2000-05-02 | Advanced Micro Devices, Inc. | Elimination of poly cap for easy poly1 contact for NAND product |
| JPH11330424A (ja) * | 1998-05-11 | 1999-11-30 | Sony Corp | Ｎａｎｄストリング型不揮発性半導体メモリセル及びその製造方法 |
-
2000
- 2000-03-09 US US09/522,247 patent/US6429479B1/en not_active Expired - Lifetime
-
2001
- 2001-03-05 JP JP2001566166A patent/JP2003526915A/ja active Pending
- 2001-03-05 CN CNB018062393A patent/CN1198322C/zh not_active Expired - Lifetime
- 2001-03-05 WO PCT/US2001/040259 patent/WO2001067490A2/en not_active Ceased
- 2001-03-05 EP EP01931109A patent/EP1261987A2/en not_active Ceased
- 2001-03-05 KR KR1020027011819A patent/KR20020086628A/ko not_active Ceased
- 2001-03-07 TW TW090105267A patent/TW479284B/zh not_active IP Right Cessation
-
2007
- 2007-09-04 JP JP2007229585A patent/JP2008022025A/ja active Pending
-
2010
- 2010-10-04 JP JP2010224726A patent/JP2011018939A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US6429479B1 (en) | 2002-08-06 |
| CN1416592A (zh) | 2003-05-07 |
| EP1261987A2 (en) | 2002-12-04 |
| JP2008022025A (ja) | 2008-01-31 |
| JP2011018939A (ja) | 2011-01-27 |
| JP2003526915A (ja) | 2003-09-09 |
| CN1198322C (zh) | 2005-04-20 |
| WO2001067490A2 (en) | 2001-09-13 |
| KR20020086628A (ko) | 2002-11-18 |
| WO2001067490A3 (en) | 2002-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |