JP2003526915A5 - - Google Patents
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- Publication number
- JP2003526915A5 JP2003526915A5 JP2001566166A JP2001566166A JP2003526915A5 JP 2003526915 A5 JP2003526915 A5 JP 2003526915A5 JP 2001566166 A JP2001566166 A JP 2001566166A JP 2001566166 A JP2001566166 A JP 2001566166A JP 2003526915 A5 JP2003526915 A5 JP 2003526915A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/522,247 | 2000-03-09 | ||
| US09/522,247 US6429479B1 (en) | 2000-03-09 | 2000-03-09 | Nand flash memory with specified gate oxide thickness |
| PCT/US2001/040259 WO2001067490A2 (en) | 2000-03-09 | 2001-03-05 | Single tunnel gate oxidation process for fabricating nand flash memory |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007229585A Division JP2008022025A (ja) | 2000-03-09 | 2007-09-04 | Ｎａｎｄフラッシュ・メモリの製造方法 |
| JP2010224726A Division JP2011018939A (ja) | 2000-03-09 | 2010-10-04 | Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003526915A JP2003526915A (ja) | 2003-09-09 |
| JP2003526915A5 true JP2003526915A5 (enExample) | 2008-01-24 |
Family
ID=24080079
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001566166A Pending JP2003526915A (ja) | 2000-03-09 | 2001-03-05 | Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法 |
| JP2007229585A Pending JP2008022025A (ja) | 2000-03-09 | 2007-09-04 | Ｎａｎｄフラッシュ・メモリの製造方法 |
| JP2010224726A Pending JP2011018939A (ja) | 2000-03-09 | 2010-10-04 | Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007229585A Pending JP2008022025A (ja) | 2000-03-09 | 2007-09-04 | Ｎａｎｄフラッシュ・メモリの製造方法 |
| JP2010224726A Pending JP2011018939A (ja) | 2000-03-09 | 2010-10-04 | Ｎａｎｄフラッシュ・メモリを製造するための単一トンネル・ゲート酸化方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6429479B1 (enExample) |
| EP (1) | EP1261987A2 (enExample) |
| JP (3) | JP2003526915A (enExample) |
| KR (1) | KR20020086628A (enExample) |
| CN (1) | CN1198322C (enExample) |
| TW (1) | TW479284B (enExample) |
| WO (1) | WO2001067490A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8108588B2 (en) * | 2003-04-16 | 2012-01-31 | Sandisk Il Ltd. | Monolithic read-while-write flash memory device |
| JP2005268621A (ja) * | 2004-03-19 | 2005-09-29 | Toshiba Corp | 半導体集積回路装置 |
| DE602004032455D1 (de) * | 2004-12-15 | 2011-06-09 | St Microelectronics Srl | Ein nichtflüchtiger Speicher mit Unterstützung von hochparallelem Test auf Waferebene |
| KR100673229B1 (ko) | 2005-07-04 | 2007-01-22 | 주식회사 하이닉스반도체 | 낸드형 플래시 메모리 소자 및 그것의 제조방법 |
| JP2008187051A (ja) * | 2007-01-30 | 2008-08-14 | Toshiba Corp | 半導体記憶装置 |
| US20090141554A1 (en) * | 2007-11-30 | 2009-06-04 | Atmel Corporation | Memory device having small array area |
| US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407058A (en) * | 1981-05-22 | 1983-10-04 | International Business Machines Corporation | Method of making dense vertical FET's |
| JPH0760864B2 (ja) * | 1984-07-13 | 1995-06-28 | 株式会社日立製作所 | 半導体集積回路装置 |
| KR960016803B1 (ko) | 1994-05-07 | 1996-12-21 | 삼성전자 주식회사 | 불휘발성 반도체 메모리장치 |
| JP3184045B2 (ja) * | 1994-06-17 | 2001-07-09 | 株式会社東芝 | 不揮発性半導体メモリ |
| KR100207504B1 (ko) | 1996-03-26 | 1999-07-15 | 윤종용 | 불휘발성 메모리소자, 그 제조방법 및 구동방법 |
| JP3808569B2 (ja) * | 1996-11-14 | 2006-08-16 | 三星電子株式会社 | 不揮発性メモリ装置 |
| JPH10209405A (ja) * | 1996-11-20 | 1998-08-07 | Sony Corp | 半導体不揮発性記憶装置 |
| JP2000003970A (ja) * | 1997-12-05 | 2000-01-07 | Sony Corp | 不揮発性半導体記憶装置およびその書き込み電圧の印加方法 |
| KR100264816B1 (ko) * | 1998-03-26 | 2000-09-01 | 윤종용 | 비휘발성 메모리 장치 및 그 동작 방법 |
| JP3144552B2 (ja) * | 1998-04-16 | 2001-03-12 | 松下電器産業株式会社 | 不揮発性半導体記憶装置の製造方法 |
| US6057193A (en) * | 1998-04-16 | 2000-05-02 | Advanced Micro Devices, Inc. | Elimination of poly cap for easy poly1 contact for NAND product |
| JPH11330424A (ja) * | 1998-05-11 | 1999-11-30 | Sony Corp | Ｎａｎｄストリング型不揮発性半導体メモリセル及びその製造方法 |
-
2000
- 2000-03-09 US US09/522,247 patent/US6429479B1/en not_active Expired - Lifetime
-
2001
- 2001-03-05 JP JP2001566166A patent/JP2003526915A/ja active Pending
- 2001-03-05 CN CNB018062393A patent/CN1198322C/zh not_active Expired - Lifetime
- 2001-03-05 WO PCT/US2001/040259 patent/WO2001067490A2/en not_active Ceased
- 2001-03-05 EP EP01931109A patent/EP1261987A2/en not_active Ceased
- 2001-03-05 KR KR1020027011819A patent/KR20020086628A/ko not_active Ceased
- 2001-03-07 TW TW090105267A patent/TW479284B/zh not_active IP Right Cessation
-
2007
- 2007-09-04 JP JP2007229585A patent/JP2008022025A/ja active Pending
-
2010
- 2010-10-04 JP JP2010224726A patent/JP2011018939A/ja active Pending