JP2003518768A - 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程 - Google Patents

残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程

Info

Publication number
JP2003518768A
JP2003518768A JP2001548428A JP2001548428A JP2003518768A JP 2003518768 A JP2003518768 A JP 2003518768A JP 2001548428 A JP2001548428 A JP 2001548428A JP 2001548428 A JP2001548428 A JP 2001548428A JP 2003518768 A JP2003518768 A JP 2003518768A
Authority
JP
Japan
Prior art keywords
etching
substrate
chamber
metal
containing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001548428A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003518768A5 (https=
Inventor
オドネル・ロバート・ジェイ．
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2003518768A publication Critical patent/JP2003518768A/ja
Publication of JP2003518768A5 publication Critical patent/JP2003518768A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Removal Of Specific Substances (AREA)
JP2001548428A 1999-12-27 2000-12-21 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程 Withdrawn JP2003518768A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/472,757 1999-12-27
US09/472,757 US6852636B1 (en) 1999-12-27 1999-12-27 Insitu post etch process to remove remaining photoresist and residual sidewall passivation
PCT/US2000/035165 WO2001048808A1 (en) 1999-12-27 2000-12-21 An insitu post etch process to remove remaining photoresist and residual sidewall passivation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011196141A Division JP2012023385A (ja) 1999-12-27 2011-09-08 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程

Publications (2)

Publication Number Publication Date
JP2003518768A true JP2003518768A (ja) 2003-06-10
JP2003518768A5 JP2003518768A5 (https=) 2008-05-22

Family

ID=23876824

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001548428A Withdrawn JP2003518768A (ja) 1999-12-27 2000-12-21 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程
JP2011196141A Pending JP2012023385A (ja) 1999-12-27 2011-09-08 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011196141A Pending JP2012023385A (ja) 1999-12-27 2011-09-08 残存フォトレジスト及び残留側壁パッシベーションを除去する、その場でのポストエッチング工程

Country Status (10)

Country Link
US (1) US6852636B1 (https=)
EP (1) EP1243023B1 (https=)
JP (2) JP2003518768A (https=)
KR (1) KR100794538B1 (https=)
CN (1) CN1210773C (https=)
AT (1) ATE431964T1 (https=)
AU (1) AU2737301A (https=)
DE (1) DE60042246D1 (https=)
TW (1) TW471060B (https=)
WO (1) WO2001048808A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225350A (ja) * 2015-05-27 2016-12-28 サムコ株式会社 アフターコロージョン抑制処理方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60119350T2 (de) * 2001-12-17 2007-03-15 Ami Semiconductor Belgium Bvba Methode zur Herstellung von Leiterbahnstrukturen
US6943039B2 (en) * 2003-02-11 2005-09-13 Applied Materials Inc. Method of etching ferroelectric layers
CN100444025C (zh) * 2004-07-12 2008-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 光刻胶修整方法
US7597816B2 (en) * 2004-09-03 2009-10-06 Lam Research Corporation Wafer bevel polymer removal
US7413993B2 (en) * 2004-11-22 2008-08-19 Infineon Technologies Ag Process for removing a residue from a metal structure on a semiconductor substrate
JP4518986B2 (ja) * 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
US20060246720A1 (en) * 2005-04-28 2006-11-02 Chii-Ming Wu Method to improve thermal stability of silicides with additives
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US20070227555A1 (en) * 2006-04-04 2007-10-04 Johnson Michael R Method to manipulate post metal etch/side wall residue
JP2014212310A (ja) * 2013-04-02 2014-11-13 東京エレクトロン株式会社 半導体デバイスの製造方法及び製造装置
CN107464750B (zh) * 2017-08-23 2019-12-13 成都海威华芯科技有限公司 一种去除光刻胶底膜的工艺方法
US11749532B2 (en) 2021-05-04 2023-09-05 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR20240086974A (ko) * 2022-12-12 2024-06-19 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
US20250118532A1 (en) * 2023-10-09 2025-04-10 Tokyo Electron Limited System and method for plasma processing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01243546A (ja) * 1988-03-25 1989-09-28 Toshiba Corp 半導体装置の製造方法
JPH0341728A (ja) * 1989-07-07 1991-02-22 Fujitsu Ltd 半導体装置の製造方法
JPH05275325A (ja) * 1992-03-26 1993-10-22 Fujitsu Ltd 半導体装置の製造方法
JPH08213366A (ja) * 1995-02-07 1996-08-20 Hitachi Ltd パターン形成方法およびパターン形成装置、ならびに半導体集積回路装置の製造方法および半導体製造装置
JPH10335313A (ja) * 1997-06-03 1998-12-18 Hitachi Ltd プラズマエッチング方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804431A (en) 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
US4985113A (en) 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
DE69033663T2 (de) 1989-08-28 2001-06-21 Hitachi, Ltd. Verfahren zur Behandlung eines Aluminium enthaltenden Musters
US5198634A (en) 1990-05-21 1993-03-30 Mattson Brad S Plasma contamination removal process
JP2998173B2 (ja) * 1990-06-01 2000-01-11 松下電器産業株式会社 Ａｌエッチング方法
WO1992000601A1 (fr) 1990-06-27 1992-01-09 Fujitsu Limited Procede de fabrication d'un circuit integre a semi-conducteurs et appareil de fabrication correspondant
US5174856A (en) 1991-08-26 1992-12-29 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch
US5462892A (en) 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
US5931721A (en) 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US5705443A (en) 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
WO1997011482A2 (en) 1995-09-05 1997-03-27 Lsi Logic Corporation Removal of halogens and photoresist from wafers
US5573961A (en) 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5780359A (en) * 1995-12-11 1998-07-14 Applied Materials, Inc. Polymer removal from top surfaces and sidewalls of a semiconductor wafer
US5824604A (en) 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5712207A (en) 1996-02-29 1998-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Profile improvement of a metal interconnect structure on a tungsten plug
DE69708787T2 (de) 1996-03-06 2002-06-20 Clariant Finance (Bvi) Ltd., Road Town Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie
US5964949A (en) 1996-03-06 1999-10-12 Mattson Technology, Inc. ICP reactor having a conically-shaped plasma-generating section
US5908319A (en) 1996-04-24 1999-06-01 Ulvac Technologies, Inc. Cleaning and stripping of photoresist from surfaces of semiconductor wafers
US5882489A (en) 1996-04-26 1999-03-16 Ulvac Technologies, Inc. Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5776832A (en) 1996-07-17 1998-07-07 Taiwan Semiconductor Manufacturing Company Ltd. Anti-corrosion etch process for etching metal interconnections extending over and within contact openings
US5779929A (en) 1996-10-07 1998-07-14 Lucent Technologies Inc. Thin film metallization for barium nanotitanate substrates
US5744395A (en) 1996-10-16 1998-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure
US5795831A (en) 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5899716A (en) 1997-05-19 1999-05-04 Vanguard International Semiconductor Corporation Oxygen ion implantation procedure to increase the surface area of an STC structure
JPH113881A (ja) * 1997-06-11 1999-01-06 Fujitsu Ltd アッシング方法及び装置
US5846884A (en) 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
US5946589A (en) 1997-10-09 1999-08-31 Chartered Semiconductor Manufacturing, Ltd. Elimination of void formation in aluminum based interconnect structures
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01243546A (ja) * 1988-03-25 1989-09-28 Toshiba Corp 半導体装置の製造方法
JPH0341728A (ja) * 1989-07-07 1991-02-22 Fujitsu Ltd 半導体装置の製造方法
JPH05275325A (ja) * 1992-03-26 1993-10-22 Fujitsu Ltd 半導体装置の製造方法
JPH08213366A (ja) * 1995-02-07 1996-08-20 Hitachi Ltd パターン形成方法およびパターン形成装置、ならびに半導体集積回路装置の製造方法および半導体製造装置
JPH10335313A (ja) * 1997-06-03 1998-12-18 Hitachi Ltd プラズマエッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225350A (ja) * 2015-05-27 2016-12-28 サムコ株式会社 アフターコロージョン抑制処理方法

Also Published As

Publication number Publication date
US6852636B1 (en) 2005-02-08
EP1243023B1 (en) 2009-05-20
ATE431964T1 (de) 2009-06-15
CN1210773C (zh) 2005-07-13
EP1243023A1 (en) 2002-09-25
KR20020081234A (ko) 2002-10-26
AU2737301A (en) 2001-07-09
TW471060B (en) 2002-01-01
DE60042246D1 (de) 2009-07-02
CN1434978A (zh) 2003-08-06
WO2001048808A1 (en) 2001-07-05
KR100794538B1 (ko) 2008-01-17
JP2012023385A (ja) 2012-02-02

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