JP2003338587A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2003338587A
JP2003338587A JP2002146241A JP2002146241A JP2003338587A JP 2003338587 A JP2003338587 A JP 2003338587A JP 2002146241 A JP2002146241 A JP 2002146241A JP 2002146241 A JP2002146241 A JP 2002146241A JP 2003338587 A JP2003338587 A JP 2003338587A
Authority
JP
Japan
Prior art keywords
wiring
semiconductor device
semiconductor element
mother board
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002146241A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003338587A5 (https=
Inventor
Toru Saga
徹 嵯峨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Akita Electronics Systems Co Ltd
Original Assignee
Hitachi Ltd
Akita Electronics Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Akita Electronics Systems Co Ltd filed Critical Hitachi Ltd
Priority to JP2002146241A priority Critical patent/JP2003338587A/ja
Priority to US10/441,123 priority patent/US6791173B2/en
Publication of JP2003338587A publication Critical patent/JP2003338587A/ja
Priority to US10/923,718 priority patent/US7170153B2/en
Publication of JP2003338587A5 publication Critical patent/JP2003338587A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2002146241A 2002-05-21 2002-05-21 半導体装置及びその製造方法 Pending JP2003338587A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002146241A JP2003338587A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法
US10/441,123 US6791173B2 (en) 2002-05-21 2003-05-20 Semiconductor device and its manufacturing method
US10/923,718 US7170153B2 (en) 2002-05-21 2004-08-24 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002146241A JP2003338587A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003338587A true JP2003338587A (ja) 2003-11-28
JP2003338587A5 JP2003338587A5 (https=) 2005-09-02

Family

ID=29545116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002146241A Pending JP2003338587A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法

Country Status (2)

Country Link
US (2) US6791173B2 (https=)
JP (1) JP2003338587A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244233A (ja) * 2004-02-25 2005-09-08 Infineon Technologies Ag チップを収容するための配線キャリア
JP2007012992A (ja) * 2005-07-01 2007-01-18 Akita Denshi Systems:Kk 半導体装置の製造方法
JP2009023239A (ja) * 2007-07-20 2009-02-05 Nec Electronics Corp 樹脂モールド金型
US7646094B2 (en) 2006-01-31 2010-01-12 Sharp Kabushiki Kaisha Semiconductor device
JP2022191741A (ja) * 2021-06-16 2022-12-28 株式会社東芝 半導体装置、その製造方法および基板

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071012B2 (en) * 2003-07-05 2006-07-04 Micron Technology, Inc. Methods relating to the reconstruction of semiconductor wafers for wafer-level processing
JP4206320B2 (ja) 2003-09-19 2009-01-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US20060091562A1 (en) * 2004-10-29 2006-05-04 Hsin-Hui Lee Flip chip BGA process and package with stiffener ring
US20060250780A1 (en) * 2005-05-06 2006-11-09 Staktek Group L.P. System component interposer
DE102005023949B4 (de) * 2005-05-20 2019-07-18 Infineon Technologies Ag Verfahren zur Herstellung eines Nutzens aus einer Verbundplatte mit Halbleiterchips und einer Kunststoffgehäusemasse und ein Verfahren zur Herstellung von Halbleiterbauteilen mittels eines Nutzens
US7589406B2 (en) * 2005-06-27 2009-09-15 Micron Technology, Inc. Stacked semiconductor component
US20070216033A1 (en) * 2006-03-20 2007-09-20 Corisis David J Carrierless chip package for integrated circuit devices, and methods of making same
JP2008004570A (ja) * 2006-06-20 2008-01-10 Matsushita Electric Ind Co Ltd 樹脂封止型半導体装置の製造方法、樹脂封止型半導体装置の製造装置、および樹脂封止型半導体装置
JP5054954B2 (ja) * 2006-09-22 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN101530011A (zh) * 2006-11-30 2009-09-09 株式会社德山 金属化陶瓷基板芯片的制造方法
US20090079057A1 (en) * 2007-09-24 2009-03-26 Infineon Technologies Ag Integrated circuit device
US7776649B1 (en) * 2009-05-01 2010-08-17 Powertech Technology Inc. Method for fabricating wafer level chip scale packages
KR101095094B1 (ko) * 2009-10-26 2011-12-16 삼성전기주식회사 웨이퍼 레벨 패키지의 제조방법
KR101388892B1 (ko) * 2012-08-20 2014-04-29 삼성전기주식회사 패키지 기판, 패키지 기판의 제조 방법 및 패키지 기판의 성형 금형
TWI576022B (zh) * 2016-05-16 2017-03-21 中華精測科技股份有限公司 支撐結構與其製造方法
US11043409B2 (en) * 2018-03-05 2021-06-22 Infineon Technologies Ag Method of forming contacts to an embedded semiconductor die and related semiconductor packages
US10923456B2 (en) * 2018-12-20 2021-02-16 Cerebras Systems Inc. Systems and methods for hierarchical exposure of an integrated circuit having multiple interconnected die
KR102818699B1 (ko) * 2020-01-29 2025-06-09 삼성전자주식회사 반도체 패키지 제조용 프레임 지그, 프레임 지그를 포함하는 반도체 패키지 제조 장치, 및 프레임 지그를 이용한 반도체 패키지 제조 방법
TWI822230B (zh) * 2022-08-05 2023-11-11 友達光電股份有限公司 發光面板

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JP3207738B2 (ja) * 1996-01-15 2001-09-10 株式会社東芝 樹脂封止型半導体装置及びその製造方法
JPH09320996A (ja) * 1996-03-29 1997-12-12 Denso Corp 半導体装置の製造方法
DE69738783D1 (de) * 1996-10-08 2008-07-31 Hitachi Chemical Co Ltd Halbleiteranordnung, halbleiterchipträgersubstrat, herstellungsverfahren für anordnung und substrat, klebstoff und doppelseitiges haftklebeband
JPH11102944A (ja) 1997-08-01 1999-04-13 Toshiba Corp 半導体装置の製造方法
JP3846094B2 (ja) * 1998-03-17 2006-11-15 株式会社デンソー 半導体装置の製造方法
DE69914418T2 (de) * 1998-08-10 2004-12-02 Lintec Corp. Dicing tape und Verfahren zum Zerteilen einer Halbleiterscheibe
US6091140A (en) * 1998-10-23 2000-07-18 Texas Instruments Incorporated Thin chip-size integrated circuit package
JP3844936B2 (ja) * 1999-03-26 2006-11-15 富士通株式会社 半導体装置
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
JP3916352B2 (ja) 1999-10-28 2007-05-16 松下電器産業株式会社 ターミナルランドフレーム及びその製造方法、並びに樹脂封止型半導体装置及びその製造方法
JP4018853B2 (ja) 1999-10-28 2007-12-05 松下電器産業株式会社 ターミナルランドフレーム
JP4454814B2 (ja) * 2000-08-29 2010-04-21 Necエレクトロニクス株式会社 樹脂封止型半導体装置及びその製造方法
JP2002118201A (ja) * 2000-10-05 2002-04-19 Hitachi Ltd 半導体装置およびその製造方法
JP2002124756A (ja) * 2000-10-18 2002-04-26 Nitto Denko Corp 回路基板および回路基板の端子部の接続構造
JP3628971B2 (ja) * 2001-02-15 2005-03-16 松下電器産業株式会社 リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法
JP3609737B2 (ja) * 2001-03-22 2005-01-12 三洋電機株式会社 回路装置の製造方法
JP3540793B2 (ja) * 2001-12-05 2004-07-07 松下電器産業株式会社 樹脂封止型半導体装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244233A (ja) * 2004-02-25 2005-09-08 Infineon Technologies Ag チップを収容するための配線キャリア
JP2007012992A (ja) * 2005-07-01 2007-01-18 Akita Denshi Systems:Kk 半導体装置の製造方法
US7646094B2 (en) 2006-01-31 2010-01-12 Sharp Kabushiki Kaisha Semiconductor device
JP2009023239A (ja) * 2007-07-20 2009-02-05 Nec Electronics Corp 樹脂モールド金型
JP2022191741A (ja) * 2021-06-16 2022-12-28 株式会社東芝 半導体装置、その製造方法および基板
JP7652638B2 (ja) 2021-06-16 2025-03-27 株式会社東芝 半導体装置、その製造方法および基板

Also Published As

Publication number Publication date
US6791173B2 (en) 2004-09-14
US7170153B2 (en) 2007-01-30
US20050023660A1 (en) 2005-02-03
US20030218262A1 (en) 2003-11-27

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