JP2003229544A - 磁気記憶装置 - Google Patents
磁気記憶装置Info
- Publication number
- JP2003229544A JP2003229544A JP2002026931A JP2002026931A JP2003229544A JP 2003229544 A JP2003229544 A JP 2003229544A JP 2002026931 A JP2002026931 A JP 2002026931A JP 2002026931 A JP2002026931 A JP 2002026931A JP 2003229544 A JP2003229544 A JP 2003229544A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording layer
- tunnel
- magnetic
- magnetoresistive effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 82
- 238000003860 storage Methods 0.000 title claims abstract description 42
- 230000000694 effects Effects 0.000 claims abstract description 71
- 230000005415 magnetization Effects 0.000 claims abstract description 55
- 230000005294 ferromagnetic effect Effects 0.000 claims description 69
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 230000004913 activation Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 11
- 230000008878 coupling Effects 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 11
- 238000005859 coupling reaction Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002885 antiferromagnetic material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910005811 NiMnSb Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002026931A JP2003229544A (ja) | 2002-02-04 | 2002-02-04 | 磁気記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002026931A JP2003229544A (ja) | 2002-02-04 | 2002-02-04 | 磁気記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003229544A true JP2003229544A (ja) | 2003-08-15 |
| JP2003229544A5 JP2003229544A5 (enrdf_load_stackoverflow) | 2005-08-04 |
Family
ID=27748609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002026931A Pending JP2003229544A (ja) | 2002-02-04 | 2002-02-04 | 磁気記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003229544A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005310829A (ja) * | 2004-04-16 | 2005-11-04 | Sony Corp | 磁気メモリ及びその記録方法 |
| JP2006278645A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Ltd | 磁気メモリ装置 |
| JP2007504651A (ja) * | 2003-08-26 | 2007-03-01 | グランディス インコーポレイテッド | スピン転移スイッチングを利用し且つ複数のビットを記憶する磁気メモリ素子 |
| JP2007516604A (ja) * | 2003-05-13 | 2007-06-21 | フリースケール セミコンダクター インコーポレイテッド | 複合磁気フリー層を有する磁気エレクトロニクス情報デバイス |
| US7269059B2 (en) | 2004-09-17 | 2007-09-11 | Kabushiki Kaisha Toshiba | Magnetic recording element and device |
| JP2011527094A (ja) * | 2007-11-21 | 2011-10-20 | マグアイシー テクノロジーズ インコーポレイテッド | 分離ｃｐｐアシスト書込を行うスピン注入ｍｒａｍデバイス |
| JP2012504349A (ja) * | 2008-09-29 | 2012-02-16 | シーゲイト テクノロジー エルエルシー | 電子的反射性絶縁スペーサを有する磁束閉鎖ｓｔｒａｍ |
| JP2012119715A (ja) * | 2004-02-26 | 2012-06-21 | Grandis Inc | 高垂直異方性及び面内平衡磁化を有する自由層を備えたスピン転移磁気素子 |
| JP2013201220A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 磁気メモリ |
| CN112490355A (zh) * | 2019-09-12 | 2021-03-12 | 铠侠股份有限公司 | 磁性存储装置 |
-
2002
- 2002-02-04 JP JP2002026931A patent/JP2003229544A/ja active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007516604A (ja) * | 2003-05-13 | 2007-06-21 | フリースケール セミコンダクター インコーポレイテッド | 複合磁気フリー層を有する磁気エレクトロニクス情報デバイス |
| JP2007504651A (ja) * | 2003-08-26 | 2007-03-01 | グランディス インコーポレイテッド | スピン転移スイッチングを利用し且つ複数のビットを記憶する磁気メモリ素子 |
| JP2012119715A (ja) * | 2004-02-26 | 2012-06-21 | Grandis Inc | 高垂直異方性及び面内平衡磁化を有する自由層を備えたスピン転移磁気素子 |
| JP2005310829A (ja) * | 2004-04-16 | 2005-11-04 | Sony Corp | 磁気メモリ及びその記録方法 |
| US7269059B2 (en) | 2004-09-17 | 2007-09-11 | Kabushiki Kaisha Toshiba | Magnetic recording element and device |
| JP2006278645A (ja) * | 2005-03-29 | 2006-10-12 | Fujitsu Ltd | 磁気メモリ装置 |
| JP2011527094A (ja) * | 2007-11-21 | 2011-10-20 | マグアイシー テクノロジーズ インコーポレイテッド | 分離ｃｐｐアシスト書込を行うスピン注入ｍｒａｍデバイス |
| JP2012504349A (ja) * | 2008-09-29 | 2012-02-16 | シーゲイト テクノロジー エルエルシー | 電子的反射性絶縁スペーサを有する磁束閉鎖ｓｔｒａｍ |
| KR101308605B1 (ko) * | 2008-09-29 | 2013-09-17 | 시게이트 테크놀로지 엘엘씨 | 전기적으로 반사성인 절연 스페이서를 갖는 폐쇄형-플럭스 ｓｔｒａｍ |
| US9041083B2 (en) | 2008-09-29 | 2015-05-26 | Seagate Technology Llc | Flux-closed STRAM with electronically reflective insulative spacer |
| JP2013201220A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 磁気メモリ |
| CN112490355A (zh) * | 2019-09-12 | 2021-03-12 | 铠侠股份有限公司 | 磁性存储装置 |
| CN112490355B (zh) * | 2019-09-12 | 2023-10-31 | 铠侠股份有限公司 | 磁性存储装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050105 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050105 |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071212 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071218 |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080205 |
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| A02 | Decision of refusal |
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