JP2003229544A5 - - Google Patents

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Publication number
JP2003229544A5
JP2003229544A5 JP2002026931A JP2002026931A JP2003229544A5 JP 2003229544 A5 JP2003229544 A5 JP 2003229544A5 JP 2002026931 A JP2002026931 A JP 2002026931A JP 2002026931 A JP2002026931 A JP 2002026931A JP 2003229544 A5 JP2003229544 A5 JP 2003229544A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002026931A
Other languages
Japanese (ja)
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JP2003229544A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002026931A priority Critical patent/JP2003229544A/ja
Priority claimed from JP2002026931A external-priority patent/JP2003229544A/ja
Publication of JP2003229544A publication Critical patent/JP2003229544A/ja
Publication of JP2003229544A5 publication Critical patent/JP2003229544A5/ja
Pending legal-status Critical Current

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JP2002026931A 2002-02-04 2002-02-04 磁気記憶装置 Pending JP2003229544A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002026931A JP2003229544A (ja) 2002-02-04 2002-02-04 磁気記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002026931A JP2003229544A (ja) 2002-02-04 2002-02-04 磁気記憶装置

Publications (2)

Publication Number Publication Date
JP2003229544A JP2003229544A (ja) 2003-08-15
JP2003229544A5 true JP2003229544A5 (enrdf_load_stackoverflow) 2005-08-04

Family

ID=27748609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002026931A Pending JP2003229544A (ja) 2002-02-04 2002-02-04 磁気記憶装置

Country Status (1)

Country Link
JP (1) JP2003229544A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6714446B1 (en) * 2003-05-13 2004-03-30 Motorola, Inc. Magnetoelectronics information device having a compound magnetic free layer
US6985385B2 (en) * 2003-08-26 2006-01-10 Grandis, Inc. Magnetic memory element utilizing spin transfer switching and storing multiple bits
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
JP4747507B2 (ja) * 2004-04-16 2011-08-17 ソニー株式会社 磁気メモリ及びその記録方法
JP2006086476A (ja) 2004-09-17 2006-03-30 Toshiba Corp 磁気記録素子および磁気記録装置
JP2006278645A (ja) * 2005-03-29 2006-10-12 Fujitsu Ltd 磁気メモリ装置
US7577021B2 (en) * 2007-11-21 2009-08-18 Magic Technologies, Inc. Spin transfer MRAM device with separated CPP assisted writing
US7985994B2 (en) * 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
JP5490167B2 (ja) * 2012-03-23 2014-05-14 株式会社東芝 磁気メモリ
JP2021044444A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 磁気記憶装置

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