JP2003197367A5 - - Google Patents

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Publication number
JP2003197367A5
JP2003197367A5 JP2001398624A JP2001398624A JP2003197367A5 JP 2003197367 A5 JP2003197367 A5 JP 2003197367A5 JP 2001398624 A JP2001398624 A JP 2001398624A JP 2001398624 A JP2001398624 A JP 2001398624A JP 2003197367 A5 JP2003197367 A5 JP 2003197367A5
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JP
Japan
Prior art keywords
insulating film
electrode
forming
tft
inorganic material
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JP2001398624A
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English (en)
Japanese (ja)
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JP4101511B2 (ja
JP2003197367A (ja
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Priority claimed from JP2001398624A external-priority patent/JP4101511B2/ja
Priority to JP2001398624A priority Critical patent/JP4101511B2/ja
Application filed filed Critical
Priority to US10/329,953 priority patent/US6861710B2/en
Priority to KR1020020084828A priority patent/KR100945468B1/ko
Publication of JP2003197367A publication Critical patent/JP2003197367A/ja
Priority to US11/060,763 priority patent/US7033848B2/en
Publication of JP2003197367A5 publication Critical patent/JP2003197367A5/ja
Priority to US11/276,651 priority patent/US7492012B2/en
Publication of JP4101511B2 publication Critical patent/JP4101511B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001398624A 2001-12-27 2001-12-27 発光装置及びその作製方法 Expired - Lifetime JP4101511B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001398624A JP4101511B2 (ja) 2001-12-27 2001-12-27 発光装置及びその作製方法
US10/329,953 US6861710B2 (en) 2001-12-27 2002-12-27 Light emitting device and method of manufacturing the same
KR1020020084828A KR100945468B1 (ko) 2001-12-27 2002-12-27 발광장치 및 그 제조방법
US11/060,763 US7033848B2 (en) 2001-12-27 2005-02-18 Light emitting device and method of manufacturing the same
US11/276,651 US7492012B2 (en) 2001-12-27 2006-03-09 Light emitting device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001398624A JP4101511B2 (ja) 2001-12-27 2001-12-27 発光装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2003197367A JP2003197367A (ja) 2003-07-11
JP2003197367A5 true JP2003197367A5 (enExample) 2005-07-14
JP4101511B2 JP4101511B2 (ja) 2008-06-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001398624A Expired - Lifetime JP4101511B2 (ja) 2001-12-27 2001-12-27 発光装置及びその作製方法

Country Status (3)

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US (3) US6861710B2 (enExample)
JP (1) JP4101511B2 (enExample)
KR (1) KR100945468B1 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038377B2 (en) 2002-01-16 2006-05-02 Seiko Epson Corporation Display device with a narrow frame
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
EP1580708A4 (en) * 2002-11-27 2011-01-05 Semiconductor Energy Lab DISPLAY APPARATUS AND ELECTRONIC DEVICE
KR100503129B1 (ko) * 2002-12-28 2005-07-22 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
TWI370700B (en) * 2003-03-31 2012-08-11 Dainippon Printing Co Ltd Protective coat and method for manufacturing thereof
US7557779B2 (en) 2003-06-13 2009-07-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US7161185B2 (en) * 2003-06-27 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR100544123B1 (ko) * 2003-07-29 2006-01-23 삼성에스디아이 주식회사 평판표시장치
US20050057154A1 (en) * 2003-07-30 2005-03-17 Optrex Corporation Organic EL display device and method for fabricating the same
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
JP4683883B2 (ja) * 2003-08-29 2011-05-18 株式会社半導体エネルギー研究所 発光装置
WO2005022496A2 (en) 2003-08-29 2005-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP4741177B2 (ja) * 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 表示装置の作製方法
US7928654B2 (en) 2003-08-29 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7291967B2 (en) * 2003-08-29 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting element including a barrier layer and a manufacturing method thereof
US7520790B2 (en) 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP4754795B2 (ja) * 2003-09-19 2011-08-24 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
CN100499035C (zh) * 2003-10-03 2009-06-10 株式会社半导体能源研究所 半导体器件的制造方法
US7205716B2 (en) 2003-10-20 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7902747B2 (en) 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4785339B2 (ja) * 2003-10-24 2011-10-05 株式会社半導体エネルギー研究所 表示装置の作製方法
US7495257B2 (en) 2003-12-26 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7274044B2 (en) * 2004-01-26 2007-09-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7315047B2 (en) * 2004-01-26 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2005216745A (ja) * 2004-01-30 2005-08-11 Seiko Epson Corp 有機ｅｌ表示装置とその製造方法、並びに電子機器
CN1977404B (zh) * 2004-02-20 2010-05-12 欧瑞康太阳Ip股份公司（特吕巴赫） 扩散阻挡层和扩散阻挡层的制造方法
US6956272B2 (en) * 2004-03-10 2005-10-18 Micron Technology, Inc. Support frame for semiconductor packages
US7423373B2 (en) * 2004-03-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
KR100616708B1 (ko) * 2004-04-12 2006-08-28 엘지.필립스 엘시디 주식회사 액정표시장치 어레이 기판 및 그 제조방법
US7504663B2 (en) * 2004-05-28 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a floating gate electrode that includes a plurality of particles
US8278818B2 (en) * 2004-06-04 2012-10-02 Samsung Mobile Display Co., Ltd. Electroluminescent display device and method of fabricating the same
KR100667064B1 (ko) * 2004-06-30 2007-01-10 삼성에스디아이 주식회사 유기 전계 발광 소자 형성 방법
KR101080353B1 (ko) 2004-07-02 2011-11-07 삼성전자주식회사 박막 트랜지스터 표시판
US20060024870A1 (en) * 2004-07-27 2006-02-02 Wen-Chun Wang Manufacturing method for low temperature polycrystalline silicon cell
JP2006054111A (ja) * 2004-08-12 2006-02-23 Sony Corp 表示装置
US7791270B2 (en) * 2004-09-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd Light-emitting device with reduced deterioration of periphery
KR100699998B1 (ko) * 2004-09-23 2007-03-26 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그의 제조 방법
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR100611768B1 (ko) * 2004-10-11 2006-08-10 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
KR100683684B1 (ko) * 2004-10-28 2007-02-20 삼성에스디아이 주식회사 유기박막 트랜지스터를 구비한 유기전계 발광표시장치
KR100683685B1 (ko) 2004-10-28 2007-02-15 삼성에스디아이 주식회사 유기박막 트랜지스터를 구비한 유기전계 발광표시장치 및그의 제조방법
US8319714B2 (en) * 2004-12-22 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Display device, and method of operation thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
TWI460851B (zh) 2005-10-17 2014-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP4655942B2 (ja) * 2006-01-16 2011-03-23 セイコーエプソン株式会社 発光装置、発光装置の製造方法および電子機器
US20070170846A1 (en) * 2006-01-23 2007-07-26 Choi Dong-Soo Organic light emitting display and method of fabricating the same
JP5160754B2 (ja) * 2006-01-31 2013-03-13 エルジー ディスプレイ カンパニー リミテッド Ｅｌ装置
KR100745760B1 (ko) * 2006-02-02 2007-08-02 삼성전자주식회사 유기 전자발광 디스플레이 및 그 제조방법
JP2007273446A (ja) 2006-03-06 2007-10-18 Seiko Epson Corp エレクトロルミネッセンス装置
JP4809087B2 (ja) 2006-03-14 2011-11-02 セイコーエプソン株式会社 エレクトロルミネッセンス装置、電子機器、およびエレクトロルミネッセンス装置の製造方法
TWI358964B (en) * 2006-04-12 2012-02-21 Au Optronics Corp Electroluminescence display element and method for
JP5172178B2 (ja) * 2007-03-15 2013-03-27 三菱電機株式会社 薄膜トランジスタ、それを用いた表示装置、及びそれらの製造方法
JP5359003B2 (ja) * 2008-04-04 2013-12-04 コニカミノルタ株式会社 有機薄膜トランジスタ装置、およびその製造方法
JP5478954B2 (ja) * 2008-07-11 2014-04-23 キヤノン株式会社 有機エレクトロルミネッセンス表示装置
KR100964230B1 (ko) * 2008-08-27 2010-06-17 삼성모바일디스플레이주식회사 평판표시장치 및 그 제조방법
KR101233348B1 (ko) 2010-06-09 2013-02-14 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR101193199B1 (ko) 2010-07-13 2012-10-19 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101339000B1 (ko) 2011-12-14 2013-12-09 엘지디스플레이 주식회사 유기전계발광 표시소자 및 그 제조방법
CN104488016B (zh) * 2012-07-20 2018-08-10 株式会社半导体能源研究所 显示装置及具有该显示装置的电子设备
KR102266448B1 (ko) * 2014-07-29 2021-06-16 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102326313B1 (ko) * 2014-11-20 2021-11-15 삼성디스플레이 주식회사 유기 발광 표시 장치
CN105633304B (zh) * 2016-03-23 2018-03-06 深圳市华星光电技术有限公司 Oled基板的封装方法与oled封装结构
KR102343573B1 (ko) * 2017-05-26 2021-12-28 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
JP6897641B2 (ja) * 2018-08-31 2021-07-07 日亜化学工業株式会社 レンズ及び発光装置並びにそれらの製造方法
JP7206475B2 (ja) 2018-08-31 2023-01-18 日亜化学工業株式会社 レンズ及び発光装置並びにそれらの製造方法
KR102733083B1 (ko) * 2018-12-31 2024-11-22 엘지디스플레이 주식회사 유기 발광 표시 장치
KR102861771B1 (ko) * 2021-05-25 2025-09-22 삼성디스플레이 주식회사 표시 패널, 및 이를 포함하는 전자 장치

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US48829A (en) * 1865-07-18 Carpet-stretcher
US1847573A (en) * 1930-03-12 1932-03-01 Commercial Iron Works Platen for presses with heating coils
US4647756A (en) * 1983-07-05 1987-03-03 E. I. Du Pont De Nemours And Company Electrical resistance heating element with signal means to indicate first use
JPH06101524B2 (ja) * 1985-09-18 1994-12-12 株式会社東芝 半導体素子用冷却体
US4808159A (en) * 1987-03-16 1989-02-28 Minnesota Mining And Manufacturing Company Apparatus and method for admixture blood warming
US4883117A (en) * 1988-07-20 1989-11-28 Sundstrand Corporation Swirl flow heat exchanger with reverse spiral configuration
US4994021A (en) * 1988-11-15 1991-02-19 Baxter International Inc. Apparatus and method for collecting and freezing blood plasma
US5153827A (en) * 1989-01-30 1992-10-06 Omni-Flow, Inc. An infusion management and pumping system having an alarm handling system
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
US5550066A (en) * 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
TWI228625B (en) 1995-11-17 2005-03-01 Semiconductor Energy Lab Display device
US5815226A (en) * 1996-02-29 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of fabricating same
JPH10154816A (ja) 1996-11-21 1998-06-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP3463971B2 (ja) 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
US6175345B1 (en) * 1997-06-02 2001-01-16 Canon Kabushiki Kaisha Electroluminescence device, electroluminescence apparatus, and production methods thereof
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6649040B1 (en) * 1998-11-17 2003-11-18 Alcan International Limited Wettable and erosion/oxidation-resistant carbon-composite materials
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
JP3424234B2 (ja) * 1998-11-30 2003-07-07 セイコーエプソン株式会社 電気光学装置及びその製造方法
US7821065B2 (en) 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
JP2001052864A (ja) 1999-06-04 2001-02-23 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
JP2001076872A (ja) 1999-06-28 2001-03-23 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
TW512543B (en) 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
JP4472056B2 (ja) 1999-07-23 2010-06-02 株式会社半導体エネルギー研究所 エレクトロルミネッセンス表示装置及びその作製方法
JP4132458B2 (ja) 1999-08-23 2008-08-13 Ｔｄｋ株式会社 有機ｅｌ素子
TW522453B (en) 1999-09-17 2003-03-01 Semiconductor Energy Lab Display device
JP3942770B2 (ja) 1999-09-22 2007-07-11 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US6881501B2 (en) * 2000-03-13 2005-04-19 Seiko Epson Corporation Organic electro-luminescence element and the manufacturing method thereof
JP3991605B2 (ja) 2000-03-13 2007-10-17 セイコーエプソン株式会社 有機エレクトロルミネッセンス素子およびその製造方法
TWI226205B (en) 2000-03-27 2005-01-01 Semiconductor Energy Lab Self-light emitting device and method of manufacturing the same
US6706544B2 (en) 2000-04-19 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and fabricating method thereof
US6860271B2 (en) * 2000-05-17 2005-03-01 O.R. Solutions, Inc. Thermal treatment system and method for controlling the system to thermally treat sterile surgical liquid
US6371121B1 (en) * 2000-05-17 2002-04-16 O.R. Solutions, Inc. Remote controlled thermal treatment system and method for controlling the system remotely to thermally treat sterile surgical liquid
US6872604B2 (en) * 2000-06-05 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a light emitting device
US6664732B2 (en) * 2000-10-26 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
TW522577B (en) 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
US6746439B2 (en) * 2001-04-19 2004-06-08 Jay Alan Lenker Method and apparatus for fluid administration with distributed heating
JP4166455B2 (ja) 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
JP2005504610A (ja) * 2001-10-04 2005-02-17 テクファーマ・ライセンシング・アクチェンゲゼルシャフト 注射装置の有効寿命の監視
US7042024B2 (en) 2001-11-09 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
US6903377B2 (en) 2001-11-09 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
US6822264B2 (en) 2001-11-16 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device

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