JP2002334790A5 - - Google Patents
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- Publication number
- JP2002334790A5 JP2002334790A5 JP2002038053A JP2002038053A JP2002334790A5 JP 2002334790 A5 JP2002334790 A5 JP 2002334790A5 JP 2002038053 A JP2002038053 A JP 2002038053A JP 2002038053 A JP2002038053 A JP 2002038053A JP 2002334790 A5 JP2002334790 A5 JP 2002334790A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- anode
- film
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002894 organic compounds Chemical class 0.000 claims 32
- 238000000034 method Methods 0.000 claims 28
- 238000004519 manufacturing process Methods 0.000 claims 27
- 239000012212 insulator Substances 0.000 claims 24
- 238000005530 etching Methods 0.000 claims 11
- 238000009832 plasma treatment Methods 0.000 claims 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
- 239000004642 Polyimide Substances 0.000 claims 6
- 229920001721 polyimide Polymers 0.000 claims 6
- 239000004952 Polyamide Substances 0.000 claims 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims 4
- 229910003437 indium oxide Inorganic materials 0.000 claims 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 4
- 229920002647 polyamide Polymers 0.000 claims 4
- 239000011787 zinc oxide Substances 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 150000001408 amides Chemical class 0.000 claims 2
- 239000003822 epoxy resin Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000003746 surface roughness Effects 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- 150000001721 carbon Chemical class 0.000 claims 1
- 230000001413 cellular effect Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002038053A JP4223218B2 (ja) | 2001-02-19 | 2002-02-15 | 発光装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001041195 | 2001-02-19 | ||
| JP2001-41195 | 2001-02-19 | ||
| JP2002038053A JP4223218B2 (ja) | 2001-02-19 | 2002-02-15 | 発光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005037682A Division JP2005135929A (ja) | 2001-02-19 | 2005-02-15 | 発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002334790A JP2002334790A (ja) | 2002-11-22 |
| JP2002334790A5 true JP2002334790A5 (enExample) | 2005-08-25 |
| JP4223218B2 JP4223218B2 (ja) | 2009-02-12 |
Family
ID=26609595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002038053A Expired - Fee Related JP4223218B2 (ja) | 2001-02-19 | 2002-02-15 | 発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4223218B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332058A (ja) | 2002-03-05 | 2003-11-21 | Sanyo Electric Co Ltd | エレクトロルミネッセンスパネルおよびその製造方法 |
| CN100466285C (zh) | 2002-09-11 | 2009-03-04 | 株式会社半导体能源研究所 | 发光装置及其制造方法 |
| US7452257B2 (en) * | 2002-12-27 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
| JP4265230B2 (ja) * | 2003-01-30 | 2009-05-20 | セイコーエプソン株式会社 | 電気光学表示装置及びその製造方法並びに電子機器 |
| CA2419704A1 (en) * | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
| US7314785B2 (en) | 2003-10-24 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP4704006B2 (ja) * | 2003-10-24 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法、並びに電子機器 |
| JP4785339B2 (ja) * | 2003-10-24 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7619258B2 (en) * | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP4776949B2 (ja) * | 2004-03-16 | 2011-09-21 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP4809627B2 (ja) * | 2004-05-21 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| US7785947B2 (en) * | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
| JP5399552B2 (ja) * | 2010-03-01 | 2014-01-29 | シャープ株式会社 | 窒化物半導体素子の製造方法、窒化物半導体発光素子および発光装置 |
| KR101995700B1 (ko) | 2011-06-24 | 2019-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 패널, 발광 패널을 사용한 발광 장치 및 발광 패널의 제작 방법 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2682188B2 (ja) * | 1990-03-09 | 1997-11-26 | 富士電機株式会社 | 電子写真用感光体の製造方法 |
| JPH0487187A (ja) * | 1990-07-27 | 1992-03-19 | Toshiba Corp | 有機エレクトロルミネッセンス素子 |
| JPH04257826A (ja) * | 1991-02-13 | 1992-09-14 | Sharp Corp | アクティブマトリクス基板の製造方法 |
| JP3201029B2 (ja) * | 1992-12-04 | 2001-08-20 | 富士ゼロックス株式会社 | 薄膜トランジスタ |
| JP3138098B2 (ja) * | 1993-01-14 | 2001-02-26 | 日立化成工業株式会社 | 液晶基板の帯電防止方法 |
| JP3067949B2 (ja) * | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
| JP3594659B2 (ja) * | 1994-09-08 | 2004-12-02 | アルバック成膜株式会社 | 位相シフトフォトマスクブランクス製造方法、位相シフトフォトマスクブランクス、及び位相シフトフォトマスク |
| JPH08120105A (ja) * | 1994-10-26 | 1996-05-14 | Kanebo Ltd | ポリビニルアルコール系多孔質シートの製造方法 |
| JPH08288090A (ja) * | 1995-04-12 | 1996-11-01 | Hitachi Chem Co Ltd | 液晶基板の帯電防止方法 |
| JP3497283B2 (ja) * | 1995-06-19 | 2004-02-16 | 松下電器産業株式会社 | 有機薄膜ｅｌ素子 |
| JPH09199278A (ja) * | 1996-01-18 | 1997-07-31 | Toray Ind Inc | 発光素子 |
| US6569544B1 (en) * | 1997-07-31 | 2003-05-27 | Ecole Polytechnique Federale De Lausanne | Electroluminescent device |
| DE69939514D1 (de) * | 1998-03-17 | 2008-10-23 | Seiko Epson Corp | Verfahren zur herstellung einer strukturierten dünnschichtvorrichtung |
| JPH11337973A (ja) * | 1998-05-28 | 1999-12-10 | Sharp Corp | アクティブマトリクス基板の製造方法 |
| JP2000077191A (ja) * | 1998-08-31 | 2000-03-14 | Sanyo Electric Co Ltd | 表示装置 |
| JP2000106279A (ja) * | 1998-09-28 | 2000-04-11 | Matsushita Electric Ind Co Ltd | 有機薄膜ｅｌ素子 |
| JP3850005B2 (ja) * | 1999-03-03 | 2006-11-29 | パイオニア株式会社 | スイッチング素子及び有機エレクトロルミネッセンス素子表示装置 |
| JP4423701B2 (ja) * | 1999-06-07 | 2010-03-03 | Ｔｄｋ株式会社 | 有機ｅｌ表示装置 |
| JP4627822B2 (ja) * | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
-
2002
- 2002-02-15 JP JP2002038053A patent/JP4223218B2/ja not_active Expired - Fee Related
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