JP2005135991A5 - - Google Patents

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Publication number
JP2005135991A5
JP2005135991A5 JP2003367639A JP2003367639A JP2005135991A5 JP 2005135991 A5 JP2005135991 A5 JP 2005135991A5 JP 2003367639 A JP2003367639 A JP 2003367639A JP 2003367639 A JP2003367639 A JP 2003367639A JP 2005135991 A5 JP2005135991 A5 JP 2005135991A5
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JP
Japan
Prior art keywords
wiring
insulating film
interlayer insulating
tft
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003367639A
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English (en)
Japanese (ja)
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JP4574158B2 (ja
JP2005135991A (ja
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Publication date
Priority claimed from JP2003367639A external-priority patent/JP4574158B2/ja
Priority to JP2003367639A priority Critical patent/JP4574158B2/ja
Application filed filed Critical
Priority to US10/963,585 priority patent/US7259429B2/en
Priority to CN2008101816670A priority patent/CN101447492B/zh
Priority to CNB2004100877912A priority patent/CN100459142C/zh
Publication of JP2005135991A publication Critical patent/JP2005135991A/ja
Publication of JP2005135991A5 publication Critical patent/JP2005135991A5/ja
Priority to US11/812,322 priority patent/US7573067B2/en
Publication of JP4574158B2 publication Critical patent/JP4574158B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003367639A 2003-10-28 2003-10-28 半導体表示装置及びその作製方法 Expired - Fee Related JP4574158B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003367639A JP4574158B2 (ja) 2003-10-28 2003-10-28 半導体表示装置及びその作製方法
US10/963,585 US7259429B2 (en) 2003-10-28 2004-10-14 Semiconductor display device
CN2008101816670A CN101447492B (zh) 2003-10-28 2004-10-28 半导体显示器件
CNB2004100877912A CN100459142C (zh) 2003-10-28 2004-10-28 半导体显示器件、半导体器件和电子设备
US11/812,322 US7573067B2 (en) 2003-10-28 2007-06-18 Semiconductor display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003367639A JP4574158B2 (ja) 2003-10-28 2003-10-28 半導体表示装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010052486A Division JP5127853B2 (ja) 2010-03-10 2010-03-10 表示装置

Publications (3)

Publication Number Publication Date
JP2005135991A JP2005135991A (ja) 2005-05-26
JP2005135991A5 true JP2005135991A5 (enExample) 2006-11-30
JP4574158B2 JP4574158B2 (ja) 2010-11-04

Family

ID=34510305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003367639A Expired - Fee Related JP4574158B2 (ja) 2003-10-28 2003-10-28 半導体表示装置及びその作製方法

Country Status (3)

Country Link
US (2) US7259429B2 (enExample)
JP (1) JP4574158B2 (enExample)
CN (2) CN100459142C (enExample)

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JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
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EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
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KR101507324B1 (ko) * 2008-09-19 2015-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101722409B1 (ko) * 2008-09-19 2017-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8224277B2 (en) * 2008-09-26 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101273972B1 (ko) 2008-10-03 2013-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN102460711B (zh) * 2009-06-09 2014-10-08 夏普株式会社 半导体装置
TWI498786B (zh) * 2009-08-24 2015-09-01 Semiconductor Energy Lab 觸控感應器及其驅動方法與顯示裝置
KR101796909B1 (ko) * 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI548057B (zh) * 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 半導體裝置
US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US9742378B2 (en) * 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN103021943B (zh) * 2012-12-14 2015-07-15 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP6146165B2 (ja) * 2013-07-01 2017-06-14 セイコーエプソン株式会社 静電気保護回路、電気光学装置、及び電子機器
CN103441119B (zh) 2013-07-05 2016-03-30 京东方科技集团股份有限公司 一种制造esd器件的方法、esd器件和显示面板
JP6079548B2 (ja) 2013-10-11 2017-02-15 セイコーエプソン株式会社 静電気保護回路、電気光学装置、及び電子機器
JP2014179636A (ja) * 2014-05-01 2014-09-25 Semiconductor Energy Lab Co Ltd 半導体装置
CN106463082B (zh) 2014-06-23 2019-07-16 株式会社半导体能源研究所 显示装置及电子设备
JP2015207779A (ja) * 2015-06-16 2015-11-19 株式会社半導体エネルギー研究所 半導体装置
KR102645930B1 (ko) * 2016-09-29 2024-03-12 엘지디스플레이 주식회사 표시장치
KR102862786B1 (ko) * 2016-12-30 2025-09-22 엘지디스플레이 주식회사 백플레인 기판, 이의 제조 방법 및 이를 적용한 유기 발광 표시 장치
US10784290B1 (en) * 2019-03-01 2020-09-22 Wuhan China Star Optoelectronics Technology Co., Ltd. Method of manufacturing array substrate and array substrate
CN118339660A (zh) * 2021-11-15 2024-07-12 株式会社日本显示器 半导体装置、显示装置及半导体集成电路

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